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公开(公告)号：KR100900594B1
公开(公告)日：2009-06-02
申请号：KR1020070014540
申请日：2007-02-12
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304 , H01L21/677
Abstract: 본 발명은 스루풋을 저하시키는 일 없이 양품률을 높일 수 있는 기판 처리 방법을 제공한다. 기판 처리 시스템(1)은 대기계(大氣系) 반송 장치(3) 내에 반송 암(52)과 가스 공급계(60)를, 로드록실(4) 내에 탑재·이송 암(70)과 가스 공급계(72)를 구비한다. 대기계 반송 장치(3) 내에 있어서, 가스 공급계(60)는 히팅 유닛(62)에 의해 가열된 고온 가스를 반송 암(52) 및 반송 암(52)에 의해 반송되고 있는 웨이퍼 W에 분사한다. 또한, 로드록실(4) 내에 있어서, 가스 공급계(72)는 히팅 유닛(76)에 의해 가열된 고온의 N
2 가스 등의 불활성 가스를 탑재·이송 암(70) 및 탑재·이송 암(70)에 의해서 반송되고 있는 웨이퍼 W에 분사한다.-
公开(公告)号：KR100875770B1
公开(公告)日：2008-12-24
申请号：KR1020037003805
申请日：2001-09-13
Applicant: 도쿄엘렉트론가부시키가이샤 , 가부시끼가이샤 도시바
IPC: H01L21/302
CPC classification number: H01L21/32137 , H01J37/32082 , H01J37/32091 , H01J37/32165 , H01J37/3266 , H01J2237/3347 , H01L21/3065 , H01L21/3081
Abstract: This invention provides the following high-rate silicon etching method. An object to be processed W having a silicon region is so set as to be in contact with a process space in a process chamber that can be held in vacuum. An etching gas is introduced into the process space to form a gas atmosphere at a gas pressure of 13 Pa to 1,333 Pa (100 mTorr to 10 Torr). A plasma is generated upon application of RF power. In the plasma, the sum of the number of charged particles such as ions and the number of radicals increases, and etching of the silicon region is performed at a higher rate than in conventional etching.
Abstract translation: 本发明提供以下高速硅蚀刻方法。 将具有硅区域的被处理物W设定为与能够保持在真空中的处理室内的处理空间接触。 蚀刻气体被引入到处理空间中以在13Pa到1333Pa（100mTorr到10Torr）的气压下形成气体气氛。 在施加RF功率时产生等离子体。 在等离子体中，诸如离子的带电粒子的数量和自由基的数量的总和增加，并且硅区域的蚀刻以比常规蚀刻更高的速率进行。 ＆lt;图像＆GT;
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公开(公告)号：KR100619112B1
公开(公告)日：2006-09-01
申请号：KR1020047003954
申请日：2002-09-19
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302
CPC classification number: H01J37/32623 , H01J37/32688
Abstract: Each magnet segment 22 of a magnetic field forming mechanism 21 is constructed such that, after the magnetic pole of each magnet segment 22 set to face a vacuum chamber 1 as shown in FIG. 3 A, adjoining magnet segments 22 are synchronously rotated in opposite directions, and hence every other magnet element 22 is rotated in the same direction as shown in FIGS. 3 B, 3 C to thereby control the status of a multi-pole magnetic field formed in the vacuum chamber 1 and surrounding a semiconductor wafer W. Therefore, the status of a multi-pole magnetic field can be easily controlled and set appropriately according to a type of plasma processing process to provide a good processing easily.
Abstract translation: 磁场形成机构21的每个磁体段22被构造成使得在每个磁体段22的磁极设置为面对真空室1之后， 如图3A所示，相邻的磁体段22在相反的方向上同步旋转，并且因此每隔一个磁体元件22以如图3A和3B所示的相同方向旋转。 从而控制形成在真空室1中并围绕半导体晶片W的多极磁场的状态。因此，多极磁场的状态可容易地控制并根据 一种等离子体处理过程，以提供一个很好的处理。
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公开(公告)号：KR1020050060060A
公开(公告)日：2005-06-21
申请号：KR1020057000553
申请日：2003-07-07
Applicant: 가부시끼가이샤 오크테크 , 도쿄엘렉트론가부시키가이샤
CPC classification number: B82Y10/00 , B82Y40/00 , G03F1/20 , G03F1/50 , H01J37/3174 , H01J2237/31788 , H01J2237/31794
Abstract: An exposure transfer mask includes a mask section having a plurality of cells on each of which an opening of a predetermined pattern is formed. When a charged particle beam is applied to one side of the cells, the charged particle beam is transmitted to the other side of the cells according to the pattern of the opening formed on the cells. When a substrate to be processed is arranged at the other side of the cells, the opening pattern of the cells is transferred to the substrate to be processed so that an exposure pattern is formed on the substrate to be processed. In the aforementioned mask section, some or all of the plurality of cells can be exchanged.
Abstract translation: 曝光转印掩模包括具有多个单元的掩模部，每个单元形成有预定图案的开口。 当将带电粒子束施加到单元的一侧时，根据在单元上形成的开口的图案，带电粒子束被传输到单元的另一侧。 当待处理的基板布置在单元的另一侧时，单元的开口图案被转移到待处理的基板，使得在待处理的基板上形成曝光图案。 在上述掩模部分中，可以交换多个单元中的一些或全部。
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公开(公告)号：KR101814201B1
公开(公告)日：2018-01-02
申请号：KR1020100055307
申请日：2010-06-11
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01L21/465 , C23C16/0227 , C23C16/325 , C23C16/4418 , H01J37/32467 , H01J37/32862
Abstract: 본발명은낭비를줄일수 있는플라즈마처리장치용의소모부품의재이용방법을제공한다. 본발명에따르면, 탄화규소가 CVD에의해적층되어탄화규소괴(41)가생성되고, 탄화규소괴(41)가가공되어포커스링(25)이제조되며, 제조된포커스링(25)이플라즈마처리장치(10)에장착된후, 플라즈마에칭처리가소정회수로반복되고, 플라즈마에칭처리중에소모된포커스링(25')의표면이산세정되고, 세정된포커스링(25)의표면에 CVD에의해탄화규소가적층되어탄화규소괴(42)가생성되고, 탄화규소괴(42)가가공되어포커스링(25")이재제조되며, 재제조된포커스링(25")이플라즈마처리장치(10)에장착된후, 플라즈마에칭처리가소정회수로반복된다.
Abstract translation: 本发明提供了一种用于能够减少浪费的等离子体处理设备的可消耗部件的再使用方法。 根据本发明，碳化硅通过CVD层压以制造碳化硅块41，碳化硅块41被加工以聚焦聚焦环25，并且所产生的聚焦环25被等离子体照射 在等离子体蚀刻处理重复预定次数之后，在等离子体蚀刻处理期间消耗的聚焦环25'的表面经历表面离散清洁，并且清洁后的聚焦环25的表面经受CVD 聚焦环25“通过机械加工碳化硅质块42制造，并且再制造的聚焦环25”安装在等离子体处理设备10上 ），等离子体蚀刻过程重复预定次数。
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Patent Agency Ranking
公开(公告)号：KR101763946B1
公开(公告)日：2017-08-01
申请号：KR1020110025701
申请日：2011-03-23
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/02 , H01L21/82 , H01L21/205 , C23C16/455 , H01L21/48
Abstract: 작업공수, 특히구멍가공공수를저감할수 있는기판처리장치용의다공판의제조방법을제공한다. 미리다수의제 1 관통구멍(42)이형성된카본기대(41)의표면에화학증착(CVD)법에의해예컨대두께 5㎜의 SiC 막(43)을형성시키고, 그후, 제 1 관통구멍(42)에대응하는제 2 관통구멍(44)이다수마련된표층의다공 SiC 막(43)을절출하고, 가열해서 SiC 막(43)에부착된카본을연소, 제거하고, 필요에따라표면을연삭하며, 또한표면처리를실시한다.
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公开(公告)号：KR1020100133910A
公开(公告)日：2010-12-22
申请号：KR1020100055307
申请日：2010-06-11
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01L21/465 , C23C16/0227 , C23C16/325 , C23C16/4418 , H01J37/32467 , H01J37/32862 , H01L21/02079
Abstract: PURPOSE: A consumable parts reusing method for a plasma processing apparatus is provided to improve the quality of reused consumable parts by cleaning the surface of the consumable parts before a silicon carbide deposition process is implemented. CONSTITUTION: Silicon carbide is deposited to prepared silicon carbide lump through a chemical vapor deposition process. The silicon carbide lump is processed to prepare consumable parts for a plasma processing apparatus in a pre-set shape. A plasma processing process is implemented with respect to a substrate using the consumable parts. The surface of the consumable parts is cleaned. Silicon carbide is re-deposited on the surface of the consumable parts in order to prepare another silicon carbide lump(42).
Abstract translation: 目的：提供等离子体处理装置的消耗部件再利用方法，以在实施碳化硅沉积工艺之前通过清洁消耗部件的表面来提高再利用的消耗部件的质量。 构成：通过化学气相沉积工艺沉积碳化硅以制备碳化硅块。 处理碳化硅块，以预先设定的形状制备等离子体处理装置的消耗部件。 使用消耗部件相对于基板实施等离子体处理工艺。 消耗部件的表面被清洁。 为了制备另一个碳化硅块（42），将碳化硅再沉积在消耗部件的表面上。
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公开(公告)号：KR1020070087495A
公开(公告)日：2007-08-28
申请号：KR1020070014540
申请日：2007-02-12
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304 , H01L21/677
CPC classification number: H01L21/67196 , B08B5/023 , H01L21/67109 , H01L21/67742
Abstract: A substrate processing system, a substrate processing method, and a storage medium are provided to remove foreign materials from a substrate transferring unit by injecting high-temperature gas into the substrate transferring unit. A substrate processing system(1) includes at least a substrate processing unit(2) for processing a substrate and a substrate transferring unit(3) for transferring the substrate. A method for processing the substrate includes an injection process for injecting high-temperature gas into at least one of the substrate transferring unit and the substrate transferred by the substrate transferring unit. In the injection process, the high-temperature gas is injected into the substrate transferring unit before the substrate is transferred by the substrate transferring unit. In the substrate processing method, the high-temperature gas causes thermal stress on foreign matters attached to one of the substrate transferring unit and the substrate transferred by the substrate transferring unit.
Abstract translation: 提供基板处理系统，基板处理方法和存储介质，以通过将高温气体注入基板转印单元来从基板转印单元去除异物。 基板处理系统（1）至少包括用于处理基板的基板处理单元（2）和用于转移基板的基板传送单元（3）。 一种用于处理衬底的方法包括将高温气体注入到由衬底转移单元转移的衬底转移单元和衬底中的至少一个中的注入工艺。 在注射过程中，在衬底被衬底转移单元转移之前，将高温气体注入到衬底转移单元中。 在基板处理方法中，高温气体对附着到基板转印单元和由基板转印单元转印的基板的异物引起热应力。
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公开(公告)号：KR1020050094475A
公开(公告)日：2005-09-27
申请号：KR1020057014249
申请日：2004-02-03
Applicant: 가부시끼가이샤 오크테크 , 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065
CPC classification number: H01L21/3065 , H01J37/32009 , H01J37/32082 , H01J37/32541
Abstract: A plasma treating device for applying a plasma treatment to a substrate to be treated (W) includes a depressurizable treatment vessel (10) for receiving the substrate to be treated. A first electrode (12) is disposed in the treatment vessel. Disposed in the treatment vessel is a supply system (62) for supplying a treatment gas. For the formation of a plasma of treatment gas, an electric field forming system (32) for forming a high frequency electric field in the treatment vessel is disposed in the treatment vessel. The main surface of the first electrode (12) is distributively formed with a number of projections (70) projecting toward the space where plasma is produced.
Abstract translation: 用于将待处理的基板施加等离子体处理的等离子体处理装置（W）包括用于接收被处理基板的可降压处理容器（10）。 第一电极（12）设置在处理容器中。 设置在处理容器中的是用于供给处理气体的供给系统（62）。 为了形成处理气体的等离子体，在处理容器中设置用于在处理容器中形成高频电场的电场形成系统（32）。 第一电极（12）的主表面分布形成有朝向产生等离子体的空间突出的多个突起（70）。
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公开(公告)号：KR1020010023113A
公开(公告)日：2001-03-26
申请号：KR1020007001735
申请日：1998-08-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H05H1/46
CPC classification number: H01J37/32082 , H01J37/32706 , H01L21/3065
Abstract: 에칭장치(100)의처리실(102) 내에는, 웨이퍼 W를탑재할수 있는하부전극(106)과상부전극(108)이대향배치된다. 상부전극(108)에는제 1 정합기(114)를거쳐서고주파의플라즈마생성용고주파전력을출력할수 있는제 1 고주파전원(116)이접속된다. 하부전극(106)에는제 2 정합기(120)를거쳐서, 플라즈마생성용고주파전력보다도상대적으로낮은주파수의바이어스용고주파전력을출력할수 있는제 2 고주파전원(122)이접속된다. 상부전극(108)에대하여제 1 고주파전원(116)으로부터정상전력의플라즈마생성용고주파전력을인가하는동시에, 하부전극(106)에대하여적어도바이어스용고주파전력이정합가능해지는전력을인가한다. 정합기간종료후, 하부전극(106)에인가되는바이어스용고주파전력을정상전력에까지인상한다. 이러한구성에의해, 바이어스용고주파전원의인가시플라즈마밀도의저하를막아, 전극으로의과대한전압의발생을방지할수 있다.
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