公开(公告)号：KR1020050086830A

公开(公告)日：2005-08-30

申请号：KR1020057009443

申请日：2003-11-25

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 고시이시아키라 ,  히로세준 ,  오가사와라마사히로 ,  히라노다이치 ,  사사키히로미츠 ,  요시다데츠오 ,  사이토미치시게 ,  이시하라히로유키 ,  오오야부준 ,  누마타고지

IPC: H01L21/3065

CPC classification number: H01J37/32449 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32587

Abstract: A plasma processing system comprising a processing container (10) which can be set to have a vacuum atmosphere. A first upper electrode (36) is arranged in a ring-shape oppositely to a substrate (W) being processed disposed in the processing container (10). A second upper electrode (38) is arranged on the radially inner side of the first upper electrode (36) while being insulated electrically therefrom. A first power supply section (50) supplies a first high frequency from a first high frequency power supply (52), at a first power level, to the first upper electrode (36). A second power supply section (76) branched from the first power supply section (50) supplies the first high frequency from the first high frequency power supply, at a second power level lower than the first power level, to the second upper electrode (38).

Abstract translation: 一种等离子体处理系统，包括可设置为具有真空气氛的处理容器（10）。 第一上电极（36）与处理容器（10）中处理的基板（W）相反地设置成环状。 第二上电极（38）布置在第一上电极（36）的径向内侧，同时与其电绝缘。 第一电源部分（50）将第一高频电源（52）的第一高频以第一功率电平提供给第一上电极（36）。 从第一电源部分（50）分支的第二电源部分（76）将来自第一高频电源的第一高频以比第一功率电平低的第二功率电平提供给第二上电极（38） ）。