公开(公告)号：KR1020050086834A

公开(公告)日：2005-08-30

申请号：KR1020057009448

申请日：2003-11-25

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 고시이시아키라 ,  히로세준 ,  오가사와라마사히로 ,  히라노다이치 ,  사사키히로미츠 ,  요시다데츠오 ,  사이토미치시게 ,  이시하라히로유키 ,  오오야부준 ,  누마타고지

IPC: H01L21/3065

CPC classification number: H01J37/32577 ,  H01J37/32082 ,  H01J37/32174 ,  H01L21/31116

Abstract: A plasma processing apparatus comprises a process chamber (10) which can be set to have a vacuum atmosphere. Upper electrodes (36, 38) are so arranged as to face a substrate to be processed (W) which is placed in the process chamber (10). A power supply unit having a first cylindrical conductor member (50) continuously connected to the upper electrode (36) in the circling direction supplies a first high-frequency wave from a first high-frequency power supply (52) to the upper electrode (36).

Abstract translation: 等离子体处理装置包括可设置为具有真空气氛的处理室（10）。 上电极（36,38）被布置为面对放置在处理室（10）中的待处理基板（W）。 在第一高频电源（52）向第一高频电源（52）向第一高频电源（52）提供第一高频波的电源单元，其具有在上下方向上与上电极（36）连续地连接的第一圆筒状的导体部件 ）。