公开(公告)号：KR1020100007827A

公开(公告)日：2010-01-22

申请号：KR1020090120493

申请日：2009-12-07

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: PURPOSE: A plasma processing method is provided to perform the plasma processing of the high quality about the processed body. CONSTITUTION: The silicon substrate is prepared within the process chamber(102). The silicon oxidation film is formed in the silicon substrate. The nitrogen gas is introduced within the process chamber on the silicon oxide film. Using the antenna member(120), the plasma is generated. Using the plasma, the plasma processing of the silicon substrate is operated. The antenna member includes the slot electrode(200). The slot electrode has a plurality of slits. The gate insulating layer is formed.

Abstract translation: 目的：提供等离子体处理方法，以对处理体进行高质量的等离子体处理。 构成：硅衬底在处理室（102）内制备。 在硅衬底中形成硅氧化膜。 氮气被引入氧化硅膜上的处理室内。 使用天线构件（120），产生等离子体。 使用等离子体，操作硅衬底的等离子体处理。 天线构件包括槽电极（200）。 槽电极具有多个狭缝。 形成栅极绝缘层。

公开(公告)号：KR100729989B1

公开(公告)日：2007-06-20

申请号：KR1020057002438

申请日：2003-08-14

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키

IPC: H01L21/336

CPC classification number: H01L29/78603 ,  H01L21/31654

Abstract: LCD용의 TFT에서 요구되는 큰 절연 내전압 및 작은 계면 준위 밀도를 갖는 절연막을 단시간에 얻기 위한 방법을 제공한다. 실리콘 기판(101)을 플라즈마 산화 처리하여 제 1 절연막(102)을 형성하고, 상기 제 1 절연막(102)에 제 2 절연막(103)을 플라즈마 CVD를 사용하여 퇴적시킴으로써 절연막을 형성한다.

公开(公告)号：KR1020040010228A

公开(公告)日：2004-01-31

申请号：KR1020030048690

申请日：2003-07-16

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 마츠모토나오키 ,  고시미즈치시오 ,  혼고도시아키

IPC: H05H1/30

CPC classification number: H01J37/3222 ,  H01J37/32192

Abstract: PURPOSE: To provide a plasma processing apparatus that can highly efficiently generate high-density plasma, even when the apparatus processes an object to be processed has a large area. CONSTITUTION: In this plasma processing apparatus, which generates plasma by supplying a microwave into a processing chamber and processes the object based on the plasma, at least one antenna which is passed through the sidewall or top board of the processing chamber is arranged on the sidewall or top board. The top board can be constituted of a metal- or silicon-based material.

Abstract translation: 目的：提供能够高效率地生成高密度等离子体的等离子体处理装置，即使设备处理对象物的面积大。 构成：在该等离子体处理装置中，其通过将微波提供到处理室中并基于等离子体处理物体而产生等离子体，在侧壁上布置有穿过处理室的侧壁或顶板的至少一个天线 或顶板。 顶板可以由金属或硅基材料构成。

公开(公告)号：KR1020040007301A

公开(公告)日：2004-01-24

申请号：KR1020030046711

申请日：2003-07-10

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  마츠모토나오키 ,  고시미즈치시오

IPC: H05H1/16

CPC classification number: H01J37/321 ,  C23C16/507 ,  H01J37/32091

Abstract: PURPOSE: To prevent the contamination by ion attack of plasma to a diaphragm by which an antenna is arranged on the atmosphere side, in a plasma processing apparatus. CONSTITUTION: The diaphragm 7 for separating the induction antenna 5 and a vacuum treatment chamber 1 consists of a non-magnetic metal plate 71 and a dielectric 72, with the non-magnetic metal plate 71 dominating a larger area than the dielectric 72. The dielectric 72 is formed linearly so as to cross at right angles with the induction antenna 5, to prevent the occurrence of an eddy current induced by the metal plate 71. The vacuum treatment chamber is equipped with a plasma ignition means 9 for stable plasma ignition.

Abstract translation: 目的：为了防止在等离子体处理装置中等离子体的离子侵入对大气侧配置天线的隔膜的污染。 构成：用于分离感应天线5和真空处理室1的隔膜7由非磁性金属板71和电介质72组成，非磁性金属板71占据比电介质72更大的面积。电介质 72形成为与感应天线5成直角交叉形成，以防止由金属板71引起的涡流的产生。真空处理室配备有用于稳定等离子体点火的等离子体点火装置9。

公开(公告)号：KR1020010041073A

公开(公告)日：2001-05-15

申请号：KR1020007009112

申请日：1999-12-10

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키

IPC: C25D5/20

Abstract: 본 발명의 도금 장치(4)는 도금액이 충전되는 도금조(15)와, 도금조(15)의 상부에 설치되고, 웨이퍼(2)의 표면에 형성된 하지 전극(18)에 접속되는 제1 O-링(17)과, 도금조(15) 내의 도금액이 제1 O-링과 접촉하지 않도록 도금조(15)의 상부에 설치되는 제2 O-링(20)과, 도금조(15) 내에 설치되는 애노드판(24)과, 도금조(15) 내에 설치되는 초음파 진동자(26)를 구비하고 있다. 이 도금 장치(4)는 반도체 웨이퍼에 균일한 두께의 도금막을 형성할 수 있다.

公开(公告)号：KR101061608B1

公开(公告)日：2011-09-01

申请号：KR1020100059596

申请日：2010-06-23

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: A plasma processing apparatus can apply a high-quality process to an object to be processed by removing impurities from a gas-introducing part of a process chamber. The gas-introducing part connected to the process chamber so as to introduce a reactant gas into the process chamber. A first vacuum pump is connected to the process chamber so as to evacuate gas from the process chamber so that the process chamber is maintained at a negative pressure. A gas-evacuating arrangement is connected to the gas-introducing part so as to exclusively evacuate the reactant gas from the gas-introducing part. The gas-evacuating arrangement includes a second vacuum pump directly connected to the gas introducing part or a bypass passage connecting the gas-introducing par to the first vacuum pump by bypassing the process chamber.

公开(公告)号：KR100953037B1

公开(公告)日：2010-04-14

申请号：KR1020090040832

申请日：2009-05-11

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: A plasma processing apparatus can apply a high-quality process to an object to be processed by removing impurities from a gas-introducing part of a process chamber. The gas-introducing part connected to the process chamber so as to introduce a reactant gas into the process chamber. A first vacuum pump is connected to the process chamber so as to evacuate gas from the process chamber so that the process chamber is maintained at a negative pressure. A gas-evacuating arrangement is connected to the gas-introducing part so as to exclusively evacuate the reactant gas from the gas-introducing part. The gas-evacuating arrangement includes a second vacuum pump directly connected to the gas introducing part or a bypass passage connecting the gas-introducing par to the first vacuum pump by bypassing the process chamber.

公开(公告)号：KR100873549B1

公开(公告)日：2008-12-11

申请号：KR1020070010118

申请日：2007-01-31

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/20 ,  H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: A plasma processing apparatus can apply a high-quality process to an object to be processed by removing impurities from a gas-introducing part of a process chamber. The gas-introducing part connected to the process chamber so as to introduce a reactant gas into the process chamber. A first vacuum pump is connected to the process chamber so as to evacuate gas from the process chamber so that the process chamber is maintained at a negative pressure. A gas-evacuating arrangement is connected to the gas-introducing part so as to exclusively evacuate the reactant gas from the gas-introducing part. The gas-evacuating arrangement includes a second vacuum pump directly connected to the gas introducing part or a bypass passage connecting the gas-introducing par to the first vacuum pump by bypassing the process chamber.

公开(公告)号：KR1020070059036A

公开(公告)日：2007-06-11

申请号：KR1020070048124

申请日：2007-05-17

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: A plasma processing method is provided to perform a high-quality plasma treatment on a processed article by removing impurities from a gas introducing part in a process chamber. A substrate is prepared which has a silicon oxide layer. Nitrogen gas is supplied to the surface of the silicon oxide layer to generate plasma. A nitrification process is performed on the silicon oxide layer by using the plasma so as to transform the upper part of the silicon oxide layer into a silicon nitride layer. The density of nitrogen on a boundary between the silicon oxide layer and the silicon nitride layer is lower than that of the silicon oxide layer under the silicon nitride layer.

Abstract translation: 提供了一种等离子体处理方法，通过从处理室中的气体导入部分去除杂质，对加工品进行高质量等离子体处理。 制备具有氧化硅层的衬底。 将氮气供给到氧化硅层的表面以产生等离子体。 通过使用等离子体对氧化硅层进行硝化处理，以将氧化硅层的上部变换为氮化硅层。 氧化硅层和氮化硅层之间的边界上的氮密度低于氮化硅层下面的氧化硅层的密度。

公开(公告)号：KR100501777B1

公开(公告)日：2005-07-20

申请号：KR1020027015999

申请日：2002-03-28

Applicant: 도쿄엘렉트론가부시키가이샤 ,  오미 다다히로

Inventor： 오미다다히로 ,  히라야마마사키 ,  스가와시게토시 ,  고토데츠야 ,  혼고도시아키

IPC: H01L21/02

CPC classification number: H01J37/3222 ,  H01J37/32192 ,  H01J37/3244

Abstract: 래디얼 라인 슬롯 안테나를 가지는 마이크로파 플라즈마 처리 장치에 있어서, 이상 방전을 억제하고, 마이크로파 플라즈마의 여기 효율을 향상시킨다. 래디얼 라인 슬롯 안테나와 동축 도파관의 접속부에 있어서, 동축 도파관 내의 급전선의 선단부를 방사면을 구성하는 슬롯판로부터 떨어지게 한다.