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公开(公告)号：KR100907400B1
公开(公告)日：2009-07-10
申请号：KR1020070086510
申请日：2007-08-28
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L29/786
CPC classification number: H01L29/7869
Abstract: 본 발명은 박막 트랜지스터 및 이를 이용한 발광표시장치에 관한 것으로, 본 발명의 박막 트랜지스터는 기판 및 상기 기판 상에 배치되는 엔(N) 타입 산화물 반도체로 이루어진 반도체층, 게이트 전극 및 소스/드레인 전극이 포함된다. 여기서, 상기 소스/드레인 전극과 접촉되는 반도체층은 1족 원소로 구성되는 군에서 선택된 적어도 하나의 이온이 도핑된 도핑영역을 포함한다.
N형 산화물 반도체로 이루어진 반도체층, 접촉저항, 이온 도핑, 전위장벽-
公开(公告)号：KR1020090072494A
公开(公告)日：2009-07-02
申请号：KR1020070140628
申请日：2007-12-28
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L29/786
CPC classification number: H01L27/1222 , H01L21/823807 , H01L27/092 , H01L29/7869 , H01L51/0005
Abstract: A thin film transistor and a manufacturing method thereof are provided to reduce the number of masks by forming an organic semiconductor layer and an oxide semiconductor layer by an ink jet printing method. A first gate electrode(11) and a second gate electrode(12) are formed on a substrate(10), and are isolated each other. A gate insulation film(13) is formed on the first gate electrode and the second electrode. A first source/drain electrode(14a,14b) is formed on the gate insulation film, and is faced with the first gate electrode. A P-type organic semiconductor layer(16) is formed on the first source/drain electrode by an ink jet printing method. A second source/drain electrode(15a,15b) is formed on the gate insulation film, and is faced with the second gate electrode. An N-type oxide semiconductor layer(17) is formed on the second source/drain electrode by an ink jet printing method.
Abstract translation: 提供一种薄膜晶体管及其制造方法，以通过喷墨打印方法形成有机半导体层和氧化物半导体层来减少掩模的数量。 第一栅电极（11）和第二栅电极（12）形成在基板（10）上，彼此隔离。 在第一栅电极和第二电极上形成栅极绝缘膜（13）。 第一源极/漏极（14a，14b）形成在栅极绝缘膜上，并且面对第一栅电极。 通过喷墨打印方法在第一源极/漏极上形成P型有机半导体层（16）。 第二源极/漏极（15a，15b）形成在栅极绝缘膜上，并面向第二栅电极。 通过喷墨印刷法在第二源极/漏极上形成N型氧化物半导体层（17）。
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公开(公告)号：KR1020090065951A
公开(公告)日：2009-06-23
申请号：KR1020070133508
申请日：2007-12-18
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L29/786
CPC classification number: H01L29/7869 , H01L21/02565 , H01L27/1222 , H01L27/1251 , H01L27/3244 , H01L27/3262 , H01L29/41733 , H01L29/4908 , H01L29/786 , H01L29/78618 , H01L29/06
Abstract: A manufacturing method of a thin film transistor and a manufacturing method of an organic light emitting display including the thin film transistor are provided to prevent generation of leakage current by maintaining stably resistivity of a channel region. A gate electrode(22) is formed on an insulating substrate(20). A gate insulating layer(23) is formed on an upper part of the insulating substrate including the gate electrode. The gate insulating layer includes oxygen ions. A semiconductor layer includes a channel region, a source region, and a drain region. A source electrode and a drain electrode come in contact with the semiconductor layer of the source region and the drain region. A protective layer is formed to coat an organic material on the upper part of the insulating substrate including the semiconductor layer.
Abstract translation: 提供薄膜晶体管的制造方法和包括薄膜晶体管的有机发光显示器的制造方法，以通过维持沟道区域的稳定电阻来防止漏电流的产生。 在绝缘基板（20）上形成栅电极（22）。 在包括栅电极的绝缘基板的上部形成栅极绝缘层（23）。 栅绝缘层包括氧离子。 半导体层包括沟道区，源极区和漏极区。 源电极和漏电极与源极区域和漏极区域的半导体层接触。 形成保护层，以在包括半导体层的绝缘基板的上部涂覆有机材料。
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14.发明授权반도체 활성층 제조 방법, 그를 이용한 박막 트랜지스터의제조 방법 및 반도체 활성층을 구비하는 박막 트랜지스터 有权半导体有源层的制造方法，使用其的薄膜晶体管的制造方法以及具有半导体活性层的薄膜晶体管
公开(公告)号：KR100889688B1
公开(公告)日：2009-03-19
申请号：KR1020070071150
申请日：2007-07-16
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L29/786
CPC classification number: C23C14/086 , C23C14/3464 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631
Abstract: 본 발명은 산화물 반도체로 이루어진 활성층 제조 방법 및 그를 이용한 박막 트랜지스터의 제조 방법에 관한 것으로, InGaZnO로 이루어진 제 1 타겟으로부터 In, Ga 및 Zn을 포함하는 이온이 증착되어 기판 상에 IGZO층이 형성되도록 하고, InZnO로 이루어진 제 2 타겟으로부터 In을 포함하는 이온이 증착되도록 하여 In의 조성비가 증가되도록 한다. In의 조성비가 종래보다 증가된 산화물 반도체를 활성층으로 이용함으로써 박막 트랜지스터의 이동도 및 슬롭 팩터를 포함하는 전기적 특성이 향상될 수 있다.
산화물 반도체, IGZO, 타겟, 조성비, 이동도-
15.发明公开반도체 활성층 제조 방법, 그를 이용한 박막 트랜지스터의제조 방법 및 반도체 활성층을 구비하는 박막 트랜지스터 有权制造半导体活性层的方法，使用其制造薄膜晶体管的方法和具有半导体活性层的薄膜晶体管
公开(公告)号：KR1020090007921A
公开(公告)日：2009-01-21
申请号：KR1020070071150
申请日：2007-07-16
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L29/786
CPC classification number: C23C14/086 , C23C14/3464 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/7869
Abstract: A semiconductor active layer manufacturing method, a thin film transistor manufacturing method using the same, and a thin film transistor including a semiconductor active layer are provided to use an oxide semiconductor, in which a composition ratio of In is increased, as an active layer, thereby improving electric characteristics including slope factor and mobility of the thin film transistor. A gate electrode is formed on a substrate. A gate insulating layer is formed on the gate electrode. An IGZO layer is formed on the gate insulating layer. The IGZO layer is an active layer providing source and drain regions and a channel region. Source and drain electrodes are formed in order to be contacted with the source and drain regions. At this time, the IGZO layer is formed by depositing ions including Ga and Zn from a first target(22). Ions including In are deposited from a second target(24). A composition ratio of the In of the IGZO layer is about 45 to 80%. The first target is made of InGaZnO. The second target is made of InZnO. First and second bias powers(23,25) are applied to the first target and the second target. The composition ratio of the In is controlled by the size of the second bias power.
Abstract translation: 提供半导体有源层制造方法，使用该半导体活性层的薄膜晶体管制造方法和包括半导体有源层的薄膜晶体管，以使用其中In的组成比增加的氧化物半导体作为有源层， 从而改善包括薄膜晶体管的斜率和迁移率的电特性。 在基板上形成栅电极。 在栅电极上形成栅极绝缘层。 在栅极绝缘层上形成IGZO层。 IGZO层是提供源极和漏极区域以及沟道区域的有源层。 形成源极和漏极以便与源极和漏极区域接触。 此时，通过从第一靶（22）沉积包括Ga和Zn的离子形成IGZO层。 包括In的离子由第二个目标（24）存放。 IGZO层的In的组成比为约45〜80％。 第一个目标是由InGaZnO制成。 第二个目标是由InZnO组成。 第一和第二偏置功率（23,25）被施加到第一目标和第二目标。 In的组成比由第二偏置功率的大小控制。
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Patent Agency Ranking
公开(公告)号：KR1020070024171A
公开(公告)日：2007-03-02
申请号：KR1020050078828
申请日：2005-08-26
Applicant: 삼성모바일디스플레이주식회사
IPC: H05B33/26
CPC classification number: H01L27/3248 , H01L27/3262 , H01L27/3265 , H01L51/5012 , H01L2924/12044
Abstract: A flat panel display device is provided to improve image quality by increasing capacitance of a capacitor by reducing a distance between electrodes in the capacitor. A flat panel display device includes a substrate(10), a source electrode(21), a drain electrode(23), and a first capacitor electrode(31). The source and drain electrodes are arranged on the substrate. The first capacitor electrode is arranged on the same layer as the source and drain electrodes. The first capacitor electrode is formed to be thicker than the source and drain electrodes. A gate electrode(25) is arranged on the source and drain electrodes. A second capacitor electrode(32) is arranged on the same layer as the gate electrode.
Abstract translation: 提供一种平板显示装置，通过减小电容器中的电极之间的距离来增加电容器的电容来提高图像质量。 平板显示装置包括基板（10），源电极（21），漏电极（23）和第一电容电极（31）。 源极和漏极布置在衬底上。 第一电容器电极布置在与源电极和漏电极相同的层上。 第一电容器电极形成为比源极和漏极更厚。 栅极（25）布置在源极和漏极上。 第二电容器电极（32）设置在与栅电极相同的层上。
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公开(公告)号：KR101084173B1
公开(公告)日：2011-11-17
申请号：KR1020090102282
申请日：2009-10-27
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L51/52 , H01L51/56 , H01L29/786
CPC classification number: H01L27/3248 , H01L27/1225 , H01L27/3258 , H01L27/3262 , H01L29/66969 , H01L29/7869 , H01L51/52 , H01L51/5237 , H01L51/56 , H01L2227/323 , H01L2251/5346
Abstract: 본 발명은 외부로부터의 수분이나 산소 등의 침투를 방지하고 대형 표시장치에의 적용이 용이하며 양산성이 뛰어난 유기 발광 표시장치 및 그 제조방법을 제공하기 위한 것으로, 게이트 전극, 상기 게이트 전극과 절연된 활성층, 상기 게이트 전극과 절연되고 상기 활성층에 콘택되는 소스 및 드레인 전극, 및 상기 소스 전극 및 드레인 전극과 상기 활성층의 사이에 개재된 절연층을 포함하는 박막 트랜지스터; 및 상기 박막 트랜지스터에 전기적으로 연결된 유기 발광 소자;를 포함하고, 상기 절연층은, 상기 활성층에 접하는 제1절연층; 및 상기 제1절연층 상에 금속 산화물로 구비된 제2절연층;을 포함하는 유기 발광 표시장치 및 그 제조방법에 관한 것이다.
Abstract translation: 本发明防止水或氧从外部和易于应用到大尺寸的显示装置，具有优异的量产的有机发光显示装置以及旨在提供制造方法，栅电极，栅电极和绝缘的方法 的有源层，一个薄膜晶体管，包括源极和漏极电极之间的绝缘层，并且源电极和漏电极，并接触所述栅电极和所述有源层上的绝缘有源层; 以及与所述薄膜晶体管电连接的有机发光器件，其中所述绝缘层包括：与所述有源层接触的第一绝缘层; 以及在第一绝缘层上由金属氧化物形成的第二绝缘层及其制造方法。
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公开(公告)号：KR101050466B1
公开(公告)日：2011-07-20
申请号：KR1020100022423
申请日：2010-03-12
Applicant: 삼성모바일디스플레이주식회사
CPC classification number: H01L27/3265 , H01L27/1225 , H01L27/1255 , H01L28/60 , H01L27/3262
Abstract: PURPOSE: A capacitor of an organic light emitting display device and an organic light emitting display device including the same are provided to make stable and natural images by increasing charge capacity without reducing a light emitting area. CONSTITUTION: A first metal layer is formed on a substrate. A first insulating layer is formed on the first metal layer. An oxide semiconductor layer is formed at a position corresponding to the first metal layer above the first insulating layer. A second insulating layer has an opening and is formed on the first insulation layer. The oxide semiconductor layer is exposed through the opening. A second metal layer is formed on the second insulating layer so as to cover the opening and to be connected to the exposed part of the oxide semiconductor layer.
Abstract translation: 目的：提供一种有机发光显示装置的电容器和包括该电容器件的有机发光显示装置，以通过增加充电容量而不减少发光面积来产生稳定和自然的图像。 构成：在基板上形成第一金属层。 在第一金属层上形成第一绝缘层。 在与第一绝缘层上方的第一金属层对应的位置处形成氧化物半导体层。 第二绝缘层具有开口并形成在第一绝缘层上。 氧化物半导体层通过开口露出。 在第二绝缘层上形成第二金属层以覆盖开口并与氧化物半导体层的暴露部分连接。
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公开(公告)号：KR1020110052948A
公开(公告)日：2011-05-19
申请号：KR1020090109704
申请日：2009-11-13
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L29/786 , H01L51/50
CPC classification number: H01L29/78633 , H01L27/3246 , H01L27/3258 , H01L27/3272 , H01L29/7869 , H01L51/5253 , H01L21/02376 , H01L51/5237 , H01L51/5284
Abstract: PURPOSE: A thin film transistor and an organic light emitting display device are provided to prevent the deterioration of an active layer due to external light by preventing the external light from being inputted to the active layer by forming a light blocking layer. CONSTITUTION: A gate electrode(103) is formed on a substrate(101). A gate insulation layer(104) is formed on the gate electrode. An active layer(105) is formed on the gate insulation layer. A source/drain electrode(106) is electrically connected to the active layer. A first insulation layer(107) is formed on the source/drain electrode. A light blocking layer(108) is formed on the first insulation layer.
Abstract translation: 目的：提供薄膜晶体管和有机发光显示装置，以通过防止外部光通过形成遮光层而被输入到有源层来防止由外部光导致的有源层的劣化。 构成：在基板（101）上形成栅电极（103）。 栅极绝缘层（104）形成在栅电极上。 在栅极绝缘层上形成有源层（105）。 源/漏电极（106）电连接到有源层。 在源/漏电极上形成第一绝缘层（107）。 在第一绝缘层上形成遮光层（108）。
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公开(公告)号：KR1020110045628A
公开(公告)日：2011-05-04
申请号：KR1020090102282
申请日：2009-10-27
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L51/52 , H01L51/56 , H01L29/786
CPC classification number: H01L27/3248 , H01L27/1225 , H01L27/3258 , H01L27/3262 , H01L29/66969 , H01L29/7869 , H01L51/52 , H01L51/5237 , H01L51/56 , H01L2227/323 , H01L2251/5346
Abstract: PURPOSE: An organic light emitting display device and manufacturing method thereof are provided to cover an active layer by an insulating layer to increase the barrier effect for the active layer, thereby sufficiently protecting the active layer from moisture and oxygen. CONSTITUTION: A gate electrode is formed on a substrate. A gate insulating layer covers the gate electrode. A patterned active layer(23) is formed on the gate insulating layer. An insulating layer(24) is formed on the gate insulating layer to cover the active layer. A source electrode(25) and a drain electrode(26) contacts the active layer. The source electrode and the drain electrode are formed on the insulating layer.
Abstract translation: 目的：提供一种有机发光显示装置及其制造方法，以通过绝缘层覆盖有源层，以增加有源层的屏障效果，从而充分保护有源层免受湿气和氧气的侵害。 构成：在基板上形成栅电极。 栅极绝缘层覆盖栅电极。 在栅极绝缘层上形成有图案的有源层（23）。 绝缘层（24）形成在栅绝缘层上以覆盖有源层。 源电极（25）和漏电极（26）接触有源层。 源电极和漏电极形成在绝缘层上。
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