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公开(公告)号：KR1020070004348A
公开(公告)日：2007-01-09
申请号：KR1020050059865
申请日：2005-07-04
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: G03F7/3021 , B05B1/005 , B05C11/10 , G03F7/70925 , H01L21/67017 , H01L21/6715
Abstract: A developing apparatus for a semiconductor device fabrication is provided to reduce the loss of a wafer and to improve qualities of products by preventing the contamination of the wafer using a cleaning unit. A developing apparatus for a semiconductor device fabrication includes a body(100), a spin chuck, a nozzle unit, a nozzle base and a cleaning unit. The spin chuck(110) is installed on the body in order to load stably a wafer. The nozzle unit(300) is installed at the body. The nozzle unit includes a spraying port(321) capable of spraying a developer. The nozzle base(400) is installed at the body in order to supply a space capable of storing the nozzle unit. The cleaning unit is installed on the nozzle base in order to clean the spraying port.
Abstract translation: 提供了一种用于半导体器件制造的显影装置，以通过防止使用清洁单元污染晶片来减少晶片的损耗并提高产品的质量。 用于半导体器件制造的显影装置包括主体（100），旋转卡盘，喷嘴单元，喷嘴基座和清洁单元。 旋转卡盘（110）安装在主体上，以便稳定地载入晶片。 喷嘴单元（300）安装在主体上。 喷嘴单元包括能够喷涂显影剂的喷射口（321）。 喷嘴基座（400）安装在主体上，以便提供能够存储喷嘴单元的空间。 清洁单元安装在喷嘴底座上，以便清洁喷洒口。
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公开(公告)号：KR1020060116105A
公开(公告)日：2006-11-14
申请号：KR1020050038476
申请日：2005-05-09
Applicant: 삼성전자주식회사
IPC: H01L21/027 , H01L21/02
CPC classification number: B05C11/1002 , G03F7/16 , H01L21/6715 , H01L21/67253
Abstract: An apparatus for manufacturing a semiconductor device is provided to form a photoresist film with a uniform thickness on a wafer by supplying a constant amount of photoresist on the wafer. An apparatus for manufacturing a semiconductor device includes a photoresist supply line(60), a valve(50), and a controller(100). The photoresist supply line supplies a photoresist from a photoresist supply portion to a photoresist spray portion. The valve is implemented on a photoresist supply line and controls an amount of the photoresist according to an amount of air. The controller includes an air amount adjuster, an air amount measuring portion, and an air amount display portion. The air amount adjuster controls the amount of air. The air amount measuring portion measures the amount of air, which is controlled by the air amount adjuster. The air amount display portion displays the amount of measured air. The controller supplies air to the valve.
Abstract translation: 提供一种用于制造半导体器件的装置，通过在晶片上提供恒定量的光致抗蚀剂来在晶片上形成具有均匀厚度的光致抗蚀剂膜。 一种用于制造半导体器件的设备包括光致抗蚀剂供应管线（60），阀门（50）和控制器（100）。 光致抗蚀剂供应线将光致抗蚀剂从光致抗蚀剂供应部分提供给光刻胶喷涂部分。 阀在光致抗蚀剂供应线上实现，并根据空气量控制光致抗蚀剂的量。 控制器包括空气量调节器，空气量测量部分和空气量显示部分。 空气量调节器控制空气量。 空气量测量部分测量由空气量调节器控制的空气量。 空气量显示部分显示测量的空气量。 控制器为阀门提供空气。
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公开(公告)号：KR1020060068481A
公开(公告)日：2006-06-21
申请号：KR1020040107183
申请日：2004-12-16
Applicant: 삼성전자주식회사
IPC: H01L21/68
CPC classification number: H01L21/68735
Abstract: 본 발명은 웨이퍼 지지용 집게에 관한 것으로, 웨이퍼 지지용 집게는 웨이퍼 에지를 따라 쌍으로 배치되고, 각각 내측면에 웨이퍼 에지에 대응하는 홈이 형성되어 웨이퍼를 지지하는 웨이퍼 고정부 및 일단이 웨이퍼 고정부와 결합되고 축을 중심으로 교차하는 쌍으로 구성된 지지부와 지지부의 타단과 연결되어 작업자가 힘을 가할 수 있도록 쌍으로 형성된 손잡이 포함하는 핸들러로 이루어져 있다.
웨이퍼, 세척, 집게-
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Patent Agency Ranking
公开(公告)号：KR1020160117818A
公开(公告)日：2016-10-11
申请号：KR1020150045423
申请日：2015-03-31
Applicant: 삼성전자주식회사
IPC: H01L21/027 , H01L21/033
CPC classification number: H01L21/0337 , H01L21/0273 , H01L21/0276 , H01L21/0332 , H01L21/0338 , H01L21/31138 , H01L21/31144
Abstract: 반도체소자의제조방법이제공된다. 반도체소자의제조방법은하부막상에반사방지막을형성하는것; 상기반사방지막상에포토레지스트패턴들을형성하는것; 상기포토레지스트패턴들을각각덮는보호패턴들을형성하는것; 상기보호패턴들로덮인상기포토레지스트패턴들을식각마스크로이용하여상기반사방지막을식각함으로써반사방지패턴들을형성하는것; 상기반사방지패턴들의측벽들을덮는스페이서들을형성하는것; 및상기반사방지패턴들을제거하는것을포함할수 있다.
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公开(公告)号：KR1020130113180A
公开(公告)日：2013-10-15
申请号：KR1020120035558
申请日：2012-04-05
Applicant: 삼성전자주식회사
IPC: H01L21/027 , H01L21/28
CPC classification number: H01L21/308 , H01L21/0337 , H01L21/31144 , H01L21/76802 , H01L21/76816 , H01L21/76897 , H01L27/10855 , H01L27/10885 , H01L27/10888 , H01L21/0279 , H01L21/76838 , H01L21/76895
Abstract: PURPOSE: A method for forming a fine pattern of a semiconductor device and a method for manufacturing the semiconductor device using the same are provided to easily form the fine pattern by using a second mask pattern. CONSTITUTION: An etching target layer (210) is formed on a substrate. A first mask pattern is formed on the etching target layer. A second mask pattern (221) is formed by injecting ions into the first mask pattern. The etching target layer is etched by using the second mask pattern.
Abstract translation: 目的：提供一种用于形成半导体器件的精细图案的方法和使用其制造半导体器件的方法，以通过使用第二掩模图案容易地形成精细图案。 构成：在基板上形成蚀刻目标层（210）。 在蚀刻目标层上形成第一掩模图案。 通过将离子注入到第一掩模图案中形成第二掩模图案（221）。 通过使用第二掩模图案蚀刻蚀刻目标层。
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公开(公告)号：KR1020090011540A
公开(公告)日：2009-02-02
申请号：KR1020070075211
申请日：2007-07-26
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: H01L31/022466 , B82Y20/00 , G02B2207/101
Abstract: A manufacturing method of a CNT thin film processed by a chemical substance having a functional group receiving electronics is provided to decrease a constant resistance between CNTs and to improve a conductivity of an electrode including a CNT thin film. A manufacturing method of a CNT thin film comprises steps of: preparing a CNT; processing the CNT with a chemical substance having a functional group receiving electronics; preparing a CNT dispersed solution by mixing the CNT processed by the chemical substance with a dispersing agent or a dispersion solvent; and forming the CNT thin film by using the CNT dispersed solution. A number of functional groups of the chemical substance having a functional group receiving the electronics is one or greater.
Abstract translation: 提供由具有官能团接收电子器件的化学物质处理的CNT薄膜的制造方法，以减小CNT之间的恒定电阻并提高包括CNT薄膜的电极的导电性。 CNT薄膜的制造方法包括以下步骤：制备CNT; 用具有接收电子学功能的化学物质处理CNT; 通过将由化学物质处理的CNT与分散剂或分散溶剂混合来制备CNT分散溶液; 并使用CNT分散溶液形成CNT薄膜。 具有接收电子器件的官能团的化学物质的许多官能团是一个或多个。
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20.发明授权옥세탄-함유 화합물, 이를 포함한 포토레지스트 조성물,상기 포토레지스트 조성물을 이용한 패턴 형성 방법 및잉크젯 프린트 헤드 有权含有氧杂环丁烷的化合物，包含其的光致抗蚀剂组合物，使用光致抗蚀剂组合物制备图案的方法和喷墨打印头
公开(公告)号：KR100837409B1
公开(公告)日：2008-06-12
申请号：KR1020060120080
申请日：2006-11-30
IPC: G03F7/004 , C07D305/06 , C07D305/08
CPC classification number: C07D305/06 , C08L61/06 , G03F7/038 , Y10S430/115
Abstract: 본 발명은 하기 화학식 1또는 2를 갖는 옥세탄-함유 화합물, 이를 포함한 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한 패턴 형성 방법 및 상기 옥세탄-함유 화합물의 중합 결과물을 포함한 잉크젯 프린트 헤드에 관한 것이다:
상기 화학식 1 중, Q
1 , Q
2 , Q
3 , Q
4 , Q
5 , Q
6 , Q
7 , Q
8 , L
1 , L
2 , a, b, c, d, e, f, g, h 및 n은 발명의 상세한 설명을 참조한다. 본 발명을 따르는 옥세탄-함유 화합물은 중합성이 우수하여 포토레지스트로 이용될 수 있으며, 이의 중합 결과물은 내열성, 내화학성, 접착성, 내구성 등이 우수하다.
포토레지스트
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