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公开(公告)号：KR100757341B1
公开(公告)日：2007-09-11
申请号：KR1020060109227
申请日：2006-11-07
Applicant: 삼성전자주식회사
CPC classification number: G03F7/0757 , C07F7/21 , G03F7/0045 , G03F7/0397 , G03F7/0755 , Y10S430/115 , Y10S430/122 , Y10S430/126 , Y10S430/146 , Y10S430/167
Abstract: 실록산 화합물, 이를 포함하는 분자 포토레지스트 조성물 및 패턴 형성 방법에서, 상기 조성물은 실리콘 원자를 포함하는 실록산 화합물 8 내지 14 중량%와, 광산 발생제 0.1 내지 0.5 중량%와 여분의 유기 용매를 포함한다. 상기 분자 포토레지스트 조성물로 형성된 포토레지스트 패턴은 산소 플라즈마를 이용하여 마스크막을 식각할 경우 내식성이 우수하여 마스크 패턴이 형성되기 전에 손실되는 문제점이 발생하지 않는다.
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公开(公告)号：KR100521809B1
公开(公告)日：2005-10-14
申请号：KR1020020066531
申请日：2002-10-30
Applicant: 삼성전자주식회사
IPC: G03F7/075
Abstract: 본 발명은 포토레지스트용 폴리카르보메틸실란 유도체 및 이를 포함한 포토레지스트 조성물에 관한 것으로, 보다 자세하게는, (ⅰ) 산의 존재하에 용해성 또는 반응성이 변하는 작용기를 포함한 폴리카르보메틸실란 유도체, (ⅱ) 상기 폴리카르보메틸실란 유도체를 포함한 레지스트 조성물 및 (ⅲ) 상기 레지스트 조성물을 도포하는 단계, 소망하는 패턴을 가진 포토마스크하에서의 노광하는 단계 및 현상하는 단계를 포함하는, 패턴형성 방법에 관한 것이다.
본 발명에 따른 폴리카르보메틸실란 유도체는 용해성, 코팅성, 실리콘 웨이퍼에 대한 적절한 접착성, 내열성, 전 범위의 파장에 걸친 낮은 흡광도 등을 가질 뿐만 아니라, 산소-반응성 이온 에칭 내성이 매우 우수하여, 단층 미세사진식각공정에서의 우수한 포토레지스트로서는 물론, 다층 미세사진식각공정에서의 우수한 이미지화층으로 사용광원의 제한 없이 사용될 수 있고, 노광 후 열처리 유무에 의해 포지형과 네가형 레지스트로 활용가능하다.-
公开(公告)号：KR1020040037858A
公开(公告)日：2004-05-08
申请号：KR1020020066531
申请日：2002-10-30
Applicant: 삼성전자주식회사
IPC: G03F7/075
Abstract: PURPOSE: Provided is a polycarbomethylsilane derivative for a photoresist, which has excellent solubility, adhesion, heat resistance, low absorbance, and oxygen-reactive ion etching resistance suitable for a photoresist capable of forming a high-resolution pattern. CONSTITUTION: The polycarbomethylsilane derivative is represented by formula 1, wherein K is an integer of 0-7; R1 is -COOC(CH3)3, tetrahydropyranoxycarbonyl group, -C6H4OCOOC(CH3)3, , -OH, -COOH, -OCOOC(CH3)3, -OCO(CH2)mCOOC(CH3)3 (in which m is an integer of 0 to 22), -OCO(CQ1Q2)mCOOC(CH3)3 £in which m is an integer of 1-4, each of Q1 and Q2 independently represents H or -(CH2)nCH3 (in which n is an integer of 0-10)|, -C6H4O(CH2)mCOOH (in which m is an integer of 1-5), -C6H4O(CH2)mCOOC(CH3)3 (in which m is an integer of 1-5), -COOCH2COOH, -COOCH2COOC(CH3)3, -OCO(CH2OCH2)mCOOH (in which m is an integer of 1-2), -OCO(CH2OCH2)mCOOC(CH3)3 (in which m is an integer of 1-2), -OCO(CH2)mCOCH2(CH2)nCOOH (in which m is an integer of 0-3 and n is an integer of 0-2), -OCOC6H4COOH, or -OCOC6H4COOC(CH3)3; R2 is -H, -CH3 or -CH2(CH2)mCH3 (in which m is an integer of 0-4); and each of p, q and x is a number related with molar composition ratio satisfying that p+q=1, p is ranged from 0.01 to 1, and x is ranged from 0.01 to q.
Abstract translation: 目的：提供一种用于光致抗蚀剂的聚碳甲基硅烷衍生物，其具有优异的溶解性，粘附性，耐热性，低吸光度和适用于能够形成高分辨率图案的光致抗蚀剂的氧反应离子蚀刻电阻。 构成：聚碳甲基硅烷衍生物由式1表示，其中K为0-7的整数; R1是-COOC（CH3）3，四氢吡喃氧基羰基，-C6H4OCOOC（CH3）3，-OH，-COOH，-OCOOC（CH3）3，-OCO（CH2）mCOOC（CH3）3（其中m是整数 0〜22），-OCO（CQ1Q2）mCOOC（CH3）3，其中m为1-4的整数，Q1和Q2各自独立地表示H或 - （CH2）nCH3（其中n为 0-10）|，-C6H4O（CH2）mCOOH（其中m为1-5的整数），-C6H4O（CH2）mCOOC（CH3）3（其中m为1-5的整数），-COOCH2COOH ，-COOCH 2 COOC（CH 3）3，-OCO（CH 2 OCH 2）mCOOH（其中m为1-2的整数），-OCO（CH 2 OCH 2）m COOC（CH 3）3（其中m为1-2的整数） -OCO（CH 2）m COCH 2（CH 2）n COOH（其中m为0-3的整数，n为0-2的整数），-OCOC 6 H 4 COOH或-OCOC 6 H 4 COOC（CH 3）3; R2是-H，-CH3或-CH2（CH2）mCH3（其中m是0-4的整数）; p，q和x各自是与满足p + q = 1的摩尔组成比相关的数，p为0.01〜1，x为0.01〜q。
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公开(公告)号：KR1020170090777A
公开(公告)日：2017-08-08
申请号：KR1020160011539
申请日：2016-01-29
Applicant: 삼성전자주식회사
CPC classification number: F25D29/00 , F04D27/004 , F25B49/025 , F25B2600/021 , F25B2600/23 , F25D2500/04 , F25D2600/02 , F25D2600/04 , F25D2700/12 , F25D2700/14 , Y02B30/741
Abstract: 냉장고및 냉장고의제어방법에관한것으로, 냉장고는제1 회전속도를기초로구동하는압축기및 상기압축기에제1 기준시간동안입력되는전기적신호의크기에대한제1 평균을연산하고, 상기연산된제1 평균과제1 기준값을비교하고, 상기제1 평균이상기제1 기준값보다크면상기압축기가상기제1 회전속도보다큰 제2 회전속도를기초로구동하도록제어하는제어부를포함할수 있다.
Abstract translation: 涉及一种控制冰箱和冰箱的方法，所述冰箱计算电信号是所述第一基准时间输入，压缩机和用于驱动所述第一旋转速度的基础上，压缩机的大小的第一平均值，和第一所计算的 1平均参考值进行比较，并且在任务1，可包含在第一控制单元，用于控制至少所述平均值大于所述第一参考值，以基于用于第二旋转速度大于第一旋转速度的虚拟基础的压缩机的驱动机构越大。
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Patent Agency Ranking
公开(公告)号：KR1020140020448A
公开(公告)日：2014-02-19
申请号：KR1020120086810
申请日：2012-08-08
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: G03F7/40 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/426 , H01L21/0206 , G03F7/42 , H01L21/0274
Abstract: A photolithographic rinse solution is provided. The photolithographic rinse solution contains deionized water; cyclic amine; and a surfactant containing one or more cyclic compounds coupled with the cyclic amine. The cyclic amine has four to six carbon elements. A cyclic compound has five to eight carbon atoms.
Abstract translation: 提供光刻冲洗溶液。 光刻冲洗溶液含有去离子水; 环胺; 和含有一个或多个与环胺偶合的环状化合物的表面活性剂。 环胺具有4-6个碳元素。 环状化合物具有5-8个碳原子。
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公开(公告)号：KR1020130032106A
公开(公告)日：2013-04-01
申请号：KR1020110095814
申请日：2011-09-22
Applicant: 삼성전자주식회사 , 주식회사 동진쎄미켐
CPC classification number: G03F7/168 , C11D11/0047
Abstract: PURPOSE: A thinner composition for RRC and EBR processes is provided to conduct EBR process without tailing on edge part of a photoresist and to improve process stability and increase yield. CONSTITUTION: A thinner composition for RRC and EBR processes comprises 40-90 parts by weight of an alkyl lactate, 5-30 parts by weight of cyclohexanone, and 1-30 parts by weight of alkyl acetate. The alkyl substituent of the alkyl acetate is C1-5 nonether-based alkyl group. The composition additionally comprises a silicon-based surfactant. The alkyl substituent of the alkyl acetate is a methyl group, ethyl group, or propyl group. The thinner composition for EBR process comprises 40-90 parts by weight of an alkyl lactate, 5-30 parts by weight of the cyclohexanone, and 1-30 parts by weight of the alkyl acetate. The alkyl substituent of the alkyl acetate is C1-5 nonether-based alkyl group.
Abstract translation: 目的：提供用于RRC和EBR工艺的更薄的组合物以进行EBR工艺，而不会在光致抗蚀剂的边缘部分拖尾并提高工艺稳定性并提高产量。 构成：用于RRC和EBR方法的较薄组合物包含40-90重量份的乳酸烷基酯，5-30重量份的环己酮和1-30重量份的乙酸烷基酯。 乙酸烷基酯的烷基取代基是C1-5非醚基烷基。 该组合物另外包含硅基表面活性剂。 乙酸烷基酯的烷基取代基是甲基，乙基或丙基。 用于EBR方法的较薄组合物包含40-90重量份的乳酸烷基酯，5-30重量份的环己酮和1-30重量份的乙酸烷基酯。 乙酸烷基酯的烷基取代基是C1-5非醚基烷基。
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公开(公告)号：KR1020080049333A
公开(公告)日：2008-06-04
申请号：KR1020060119773
申请日：2006-11-30
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: G03F7/42 , G03F7/0045 , H01L21/265
Abstract: A method for manufacturing a semiconductor device is provided to reduce a hardness degree of a photoresist pattern by using the photoresist pattern including a calixarene derivative as an ion implantation mask. An isolation layer(102) is formed on a semiconductor substrate in order to define an active region and a field region. A gate oxide layer is formed on the active region. A conductive layer is formed on the substrate. A silicon nitride layer is formed on the conductive layer. A photoresist layer including a calixarene derivative is formed on the silicon nitride layer. A photoresist pattern is formed on the silicon nitride layer. A gate structure(110) is formed by etching the silicon nitride layer, the conductive layer, and the gate oxide layer. A source/drain(112) is formed under a surface of the photoresist pattern.
Abstract translation: 提供一种制造半导体器件的方法，通过使用包括杯芳烃衍生物的光致抗蚀剂图案作为离子注入掩模来降低光致抗蚀剂图案的硬度。 隔离层（102）形成在半导体衬底上以便限定有源区和场区。 在有源区上形成栅氧化层。 在基板上形成导电层。 在导电层上形成氮化硅层。 在氮化硅层上形成包含杯芳烃衍生物的光致抗蚀剂层。 在氮化硅层上形成光刻胶图形。 通过蚀刻氮化硅层，导电层和栅极氧化物层形成栅极结构（110）。 源极/漏极（112）形成在光致抗蚀剂图案的表面下方。
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公开(公告)号：KR1020070066855A
公开(公告)日：2007-06-27
申请号：KR1020060109227
申请日：2006-11-07
Applicant: 삼성전자주식회사
CPC classification number: G03F7/0757 , C07F7/21 , G03F7/0045 , G03F7/0397 , G03F7/0755 , Y10S430/115 , Y10S430/122 , Y10S430/126 , Y10S430/146 , Y10S430/167
Abstract: Provided are a siloxane compound, a molecular photoresist composition containing the siloxane compound, and a method for forming a pattern by using the composition to prevent a pattern from being damaged before a mask pattern is formed by improving corrosion resistance when a mask film is etched with oxygen plasma. The siloxane compound is represented by the chemical formula 1, wherein R1 is a t-butyl group or a 1-t-butoxyethyl group; R2 and R3 are a C1-C4 alkyl group. The molecular photoresist composition comprises 8-14 wt% of the siloxane compound of the chemical formula 1; 0.1-0.5 wt% of a photoacid generator; and the balance of an organic solvent. Preferably, the photoacid generator is at least one selected from the group consisting of a triaryl sulfonium salt, a diaryl sulfonium salt, a sulfonate and N-hydroxysuccinimide triflate.
Abstract translation: 提供硅氧烷化合物，含有硅氧烷化合物的分子光致抗蚀剂组合物，以及通过使用该组合物形成图案的方法，以防止在掩模图案形成之前通过改善掩模膜蚀刻时的耐腐蚀性而损害图案 氧等离子体。 硅氧烷化合物由化学式1表示，其中R1是叔丁基或1-叔丁氧基乙基; R2和R3是C1-C4烷基。 分子光刻胶组合物包含8-14重量％的化学式1的硅氧烷化合物; 0.1-0.5重量％的光酸产生剂; 和有机溶剂的平衡。 优选地，光酸产生剂是选自三芳基锍盐，二芳基锍盐，磺酸盐和N-羟基琥珀酰亚胺三氟甲磺酸盐中的至少一种。
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公开(公告)号：KR1020060131344A
公开(公告)日：2006-12-20
申请号：KR1020050051698
申请日：2005-06-16
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: G03F7/095 , G03F7/2022 , G03F7/70466 , H01L21/0274 , H01L21/0337 , H01L21/0338 , H01L21/31144
Abstract: A lithography method using a bi-layer resist is provided to increase a lithography process margin by increasing selectivity to an upper resist layer and reducing a thickness of the upper resist layer. An etching target layer(102) is formed on a substrate(100). A lower resist layer(104) is formed on the etching target layer. An upper resist layer is formed on the lower resist layer. An upper resist layer pattern(106a) is formed by exposing and developing the upper resist layer. A material layer similar to a silicon oxide(108) is formed on the upper resist layer by performing a hard bake process under oxygen atmosphere. A lower resist layer pattern is formed by developing the lower resist layer. The etching target layer is etched by using the lower resist layer pattern as a mask.
Abstract translation: 提供了使用双层抗蚀剂的光刻方法，以通过增加对上抗蚀剂层的选择性和减小上抗蚀剂层的厚度来增加光刻工艺裕度。 在基板（100）上形成蚀刻目标层（102）。 在蚀刻目标层上形成下层抗蚀剂层（104）。 在下抗蚀剂层上形成上抗蚀剂层。 通过曝光和显影上抗蚀剂层形成上抗蚀层图案（106a）。 通过在氧气氛下进行硬烘烤处理，在上抗蚀剂层上形成与氧化硅（108）相似的材料层。 通过显影下抗蚀剂层形成较低的抗蚀剂层图案。 通过使用下抗蚀剂层图案作为掩模来蚀刻蚀刻目标层。
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