박테리아 및 전이금속 산화물로 이루어진 유ㆍ무기 복합체 및 이의 제조방법
    14.
    发明公开
    박테리아 및 전이금속 산화물로 이루어진 유ㆍ무기 복합체 및 이의 제조방법 失效
    细菌/过渡金属氧化物有机无机复合材料及其制造方法

    公开(公告)号:KR1020100092324A

    公开(公告)日:2010-08-20

    申请号:KR1020090011628

    申请日:2009-02-12

    Abstract: PURPOSE: A method for manufacturing an organic-inorganic composite comprising bacteria and transition metal oxides is provided to reduce costs and time by simplifying a synthetic process, to enable mass production, and to obtain the organic-inorganic composite having various one-dimensional shapes. CONSTITUTION: A method for manufacturing an organic-inorganic composite comprising bacteria and transition metal oxides comprises the following steps: manufacturing a bacteria dispersion solution by controlling the concentration of the bacteria using deionized water after culturing the bacteria having ion charges; uniformly dispersing bacillus bacteria and a transition metal precursor by adding a transition metal precursor solution to the solution of the previous step and stirring the mixture at 20-30 °C for 0.5-2 hours; making the transition metal oxides attached uniformly to the surface of the bacteria by adding a solution, in which sodium borohydride(NaBH4) is dissolved in the deionized water, to the solution of the previous step and refluxing the mixture; obtaining a precipitate through centrifugal filtration of the refluxed solution; and manufacturing the organic-inorganic composite by drying the precipitate in vacuum state.

    Abstract translation: 目的:提供一种制造包含细菌和过渡金属氧化物的有机 - 无机复合材料的方法,通过简化合成方法以实现批量生产并获得具有各种一维形状的有机 - 无机复合材料,从而降低成本和时间。 构成:包含细菌和过渡金属氧化物的有机 - 无机复合材料的制造方法,其特征在于,包括以下步骤:在培养具有离子电荷的细菌后,通过使用去离子水控制细菌的浓度来制造细菌分散液; 通过向前述步骤的溶液中加入过渡金属前体溶液并在20-30℃下搅拌混合物0.5-2小时,均匀分散芽孢杆菌细菌和过渡金属前体; 通过向上述步骤的溶液中加入硼氢化钠(NaBH 4)溶解在去离子水中的溶液并回流混合物,使过渡金属氧化物均匀地附着到细菌表面。 通过离心过滤回流溶液得到沉淀物; 并通过在真空状态下干燥沉淀来制造有机 - 无机复合物。

    저온소성용 저유전율 세라믹 유전체 조성물 및 저유전율 세라믹 유전체
    15.
    发明公开
    저온소성용 저유전율 세라믹 유전체 조성물 및 저유전율 세라믹 유전체 有权
    陶瓷低K电介质组合物与低温烧制和陶瓷低K电介质的核化剂

    公开(公告)号:KR1020100064488A

    公开(公告)日:2010-06-15

    申请号:KR1020080122940

    申请日:2008-12-05

    CPC classification number: H01G4/129 C03C3/093

    Abstract: PURPOSE: A low-permittivity dielectric composition for low-temperature sintering, and a low permittivity ceramic dielectric body using thereof are provided to maintain the low permittivity by partially crystallizing glass using a nucleator. CONSTITUTION: A low-permittivity dielectric composition for low-temperature sintering contains the following; 44~65wt% of borosilicate glass frit including SiO_2, B_2O_3, Al_2O_3, alkaline earth oxide, and alkali metal oxide; 34~55wt% of filling material selected from the group consisting of Al_2O_3, SiO_2, MgAl_2O_4, MgSiO_3, and others; and 0.1~5wt% of nucleator selected from ZrO_2, TiO_2, La_2O_3, and WO_3. A low permittivity ceramic dielectric body including the low-permittivity dielectric composition is produced by low temperature sintering the low-permittivity dielectric composition.

    Abstract translation: 目的:提供一种用于低温烧结的低介电常数介电组合物和使用其的低介电常数陶瓷介电体,以通过使用成核剂部分结晶玻璃来保持低介电常数。 构成:用于低温烧结的低介电常数介电组合物包含以下物质: 44〜65wt%的硼硅酸盐玻璃料,包括SiO_2,B_2O_3,Al_2O_3,碱土金属氧化物和碱金属氧化物; 34〜55wt%的选自Al_2O_3,SiO_2,MgAl_2O_4,MgSiO_3等的填充材料; 和0.1〜5wt%的选自ZrO_2,TiO_2,La_2O_3和WO_3的成核剂。 包括低介电常数介电组合物的低介电常数陶瓷介电体通过低介电常数电介质组合物的低温烧结来制备。

    전이금속 산화물/다층벽 탄소나노튜브 나노복합체 및 이의 제조방법
    16.
    发明公开
    전이금속 산화물/다층벽 탄소나노튜브 나노복합체 및 이의 제조방법 无效
    过渡金属氧化物/多层碳纳米管纳米复合材料及其制造方法

    公开(公告)号:KR1020100028356A

    公开(公告)日:2010-03-12

    申请号:KR1020080087359

    申请日:2008-09-04

    Abstract: PURPOSE: A transition metal oxide / multi-walled carbon nanotube nanocomposite and a method for manufacture the same are provided to enable mass production through a simple synthesis procedure by manufacturing 0 dimension -1 dimension nanocomposite using an urea composition method and a surfactant. CONSTITUTION: A method for manufacturing a transition metal oxide / multi-walled carbon nanotube nanocomposite comprises the following steps: a first step of dissolving a surfactant by putting the surfactant into deionized water; a second step of uniformly dispersing carbon nanotube and the surfactant by putting multi-walled carbon nanotube into a solution of the first step; a third step of adding chloridation metal and urea in the solution of the third step; a fourth step of heating the solution of the third step to 95 ~ 105 °C while stirring the solution; a fifth step of obtaining a precipitate by refluxing the solution of the fourth step; and a sixth step of manufacturing the nanocomposite by heat-treating the precipitate under air atmosphere or vacuum.

    Abstract translation: 目的:提供过渡金属氧化物/多壁碳纳米管纳米复合材料及其制造方法,以通过使用尿素组合物法和表面活性剂制造0维-1维纳米复合材料,通过简单的合成方法进行批量生产。 构成:制造过渡金属氧化物/多壁碳纳米管纳米复合材料的方法包括以下步骤:将表面活性剂溶解在去离子水中来溶解表面活性剂的第一步骤; 通过将多壁碳纳米管置于第一步骤的溶液中来均匀分散碳纳米管和表面活性剂的第二步骤; 在第三步骤的溶液中加入氯化金属和尿素的第三步骤; 在搅拌溶液的同时将第三步骤的溶液加热至95〜105℃的第四步骤; 通过回流第四步骤的溶液获得沉淀物的第五步骤; 以及通过在空气气氛或真空下对沉淀物进行热处理来制造纳米复合材料的第六步骤。

    가시광 대역 반도체 나노선 광센서 및 이의 제조 방법
    17.
    发明公开
    가시광 대역 반도체 나노선 광센서 및 이의 제조 방법 无效
    可见范围半导体基于纳米级的光电传感器及其制造方法

    公开(公告)号:KR1020090109980A

    公开(公告)日:2009-10-21

    申请号:KR1020080035505

    申请日:2008-04-17

    Abstract: PURPOSE: A semiconductor nano optical sensor and a manufacturing method thereof with fast reaction are provided to secure high sensitivity and fast response by arranging semiconductor nano line. CONSTITUTION: A semiconductor nano optical sensor and a manufacturing method thereof with fast reaction includes a substrate(10), a metal catalytic layer(40), and a visible light band semiconductor nano line(50). An upper side of the substrate is composed of a substrate. Two electrodes are separated at specific interval between two substrates. A metal catalytic layer is formed on each electrode. A visible light band semiconductor nano line is formed from the metal catalytic layer on each electrode.

    Abstract translation: 目的:提供半导体纳米光学传感器及其快速反应的制造方法,以通过布置半导体纳米线来确保高灵敏度和快速响应。 构成:具有快速反应的半导体纳米光学传感器及其制造方法包括基板(10),金属催化层(40)和可见光带半导体纳米线(50)。 基板的上侧由基板构成。 两个电极在两个基板之间以特定间隔分开。 在每个电极上形成金属催化层。 在每个电极上由金属催化层形成可见光带半导体纳米线。

    침상형 구조를 갖는 질화알루미늄 단결정 나노막대의제조방법
    18.
    发明授权
    침상형 구조를 갖는 질화알루미늄 단결정 나노막대의제조방법 失效
    针状单晶ALN NANOROD的制造方法

    公开(公告)号:KR100826305B1

    公开(公告)日:2008-04-30

    申请号:KR1020060113648

    申请日:2006-11-17

    Abstract: A method for manufacturing a needle type single crystalline AlN nano-rod is provided to enhance efficiency and to extend a lifetime of the needle type single crystalline AlN nano-rod. An aluminum metal, a hydrochloric gas, and an ammonia gas react under nitrogen gas atmosphere during 10-30 minutes at temperature of 680-720 °C. Aluminum metal powders are positioned in the inside of the quartz tube. The hydrochloric gas/nitrogen is introduced into the inside of the quartz tube. The ammonia gas/nitrogen is introduced into the inside of the quartz tube. In the introduced gas, a volume ratio of HCl/NH3 is 0.02 to 0.05 and a volume ratio of (HCl/N2)/(NH3/N2) is 0.6 to 0.8. The total flow rate of the introduced gas corresponds to a range of 600 to 1000 sccm. A single crystalline nano-rod(110) is formed by introducing the gas in the flow rate.

    Abstract translation: 提供一种制造针型单晶AlN纳米棒的方法,以提高针型单晶AlN纳米棒的效率并延长其寿命。 在氮气气氛下,在680-720℃的温度下,在10-30分钟内,将铝金属,盐酸气体和氨气反应。 铝金属粉末位于石英管的内部。 将盐酸气体/氮气引入石英管的内部。 将氨气/氮气引入石英管的内部。 在导入的气体中,HCl / NH 3的体积比为0.02〜0.05,(HCl / N 2)/(NH 3 / N 2)的体积比为0.6〜0.8。 引入气体的总流量对应于600〜1000sccm的范围。 通过以流量引入气体形成单晶纳米棒(110)。

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