-
公开(公告)号：KR1020090124341A
公开(公告)日：2009-12-03
申请号：KR1020080050480
申请日：2008-05-29
Applicant: 한국과학기술연구원
CPC classification number: B01J3/006 , B01J19/088 , B01J2219/0809 , B01J2219/0879 , B01J2219/0894 , C01B32/20 , C01B32/25 , C01B32/28 , C30B29/04 , C30B33/02 , Y10T428/30 , B32B19/00 , B32B19/04
Abstract: PURPOSE: An AA stacked graphene-diamond hybrid material and a manufacturing method thereof are provided to form the AA stacked grapheme having good property on a diamond substrate with a simple process by changing the diamond surface to graphene. CONSTITUTION: An AA stacked graphene-diamond hybrid material is formed by including AA stacked graphene changed to the constant thickness by alternating disappearance of a partition surface and a diamond base material. A hydrogen atom is combined on a severed diamond lattice in which the graphene and diamond are not combined between the AA stacked grapheme and the changed diamond base material. The diamond base material is powder, a membrane or a sheet form.
Abstract translation: 目的：提供一种AA堆叠的石墨烯 - 金刚石混合材料及其制造方法，通过将金刚石表面改变为石墨烯，通过简单的工艺在金刚石基底上形成具有良好性能的AA堆叠图形。 构成：AA层叠的石墨烯 - 金刚石混合材料通过包括通过分隔表面和金刚石基底材料的交替消失将AA叠层石墨烯包括在恒定厚度上而形成。 氢原子组合在切割的金刚石晶格上，其中石墨烯和金刚石不在AA堆叠的图形和改变的金刚石基材之间组合。 金刚石基材是粉末，膜或片形式。
-
公开(公告)号：KR1020090124111A
公开(公告)日：2009-12-03
申请号：KR1020080050117
申请日：2008-05-29
Applicant: 한국과학기술연구원
Abstract: PURPOSE: A process for growing single crystal diamond is provided to minimize the temperature difference between diamonds and minimize the temperature change by the plasma contact. CONSTITUTION: The pit(23) having the intaglio pattern corresponding to the mold substrate(21) to the crystalline morphology of the diamond seed(24) is formed. In the diamond seed, the growth is included in the pit of the mold substrate. The quick freeze part(22) controls the temperature of the mold substrate. The mold whole of the substrate is relatively uniformly contacted with the plasma(20). The intaglio pattern of the pit formed in the mold the inverted pyramid or the cubic shape. The diamond seed has the octahedron shape.
Abstract translation: 目的：提供生长单晶金刚石的方法，以最小化金刚石之间的温差，并通过等离子体接触使温度变化最小化。 构成：形成具有与模具基板（21）相对应的凹版图案的钻孔（23）与金刚石晶粒（24）的结晶形态。 在金刚石种子中，生长被包括在模具基材的凹坑中。 快速冷冻部件（22）控制模具基板的温度。 基板的模具整体与等离子体（20）相对均匀地接触。 在模具中形成的凹坑的凹雕图案是倒金字塔形或立方体形。 钻石种子具有八面体形状。
-
公开(公告)号：KR1020090017454A
公开(公告)日：2009-02-18
申请号：KR1020080080167
申请日：2008-08-14
Applicant: 한국과학기술연구원
CPC classification number: C30B29/02 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C01B32/188 , C23C16/01 , C23C16/26 , C30B25/02 , C30B29/04 , Y10S977/742 , Y10T428/30
Abstract: A grapheme hybrid material in which grapheme is epitaxially grown to form a predetermined angle to the surface of a matrix using chemical vapor deposition is provided, a method for preparing the same is provided, a method of preparing grapheme to a large diameter of 8 inches or more is provided, and a method of obtaining a grapheme/matrix hybrid material and a carbon nanomaterial/diamond film hybrid material at the same time and obtaining a CVD diamond film and grapheme successively is provided. A grapheme hybrid material comprises: a matrix having a cut lattice plane on the surface thereof; and grapheme epitaxially grown along the cut lattice plane of the matrix surface. A method for preparing a grapheme hybrid material comprises epitaxially growing the graphene along the cut lattice plane of the matrix surface while forming a predetermined angle to the matrix by a chemical vapor deposition method of contacting reaction gas comprising hydrogen and carbon components with a matrix having a cut lattice plane on the surface thereof such that graphene is capable of being epitaxially grown on the cut lattice plane.
Abstract translation: 提供了一种使用化学气相沉积外延生长以形成与基体表面成预定角度的图形化的混合材料，提供了一种制备方法，该方法用于制备8英寸的大直径或 提供了更多的方法，并且提供了一种同时获得图形/矩阵混合材料和碳纳米材料/金刚石膜混合材料并连续获得CVD金刚石膜和图形的方法。 一种图形混合材料包括：在其表面上具有切割晶格面的矩阵; 以及沿矩阵表面的切割晶格面外延生长的图形。 一种制备字母杂化材料的方法包括沿着矩阵表面的切割晶格面外延生长石墨烯，同时通过化学气相沉积方法与基体形成预定的角度，该方法使含有氢和碳组分的反应气体与具有 在其表面上切割晶格面，使得石墨烯能够在切割的晶格面上外延生长。
-
公开(公告)号：KR1020040005105A
公开(公告)日：2004-01-16
申请号：KR1020020039401
申请日：2002-07-08
Applicant: 한국과학기술연구원
IPC: C23C16/22
CPC classification number: C23C16/279 , B23B27/148 , B23B2228/04 , C23C16/271 , C23C16/274
Abstract: PURPOSE: A method for refining particle size of deposited diamond film, particularly, particle size of the edge of the cutting tool by consistently applying negative bias to the cutting tool from the outside in the diamond film deposition process is provided, and a diamond film deposited cutting tool used in the method is provided. CONSTITUTION: The method comprises the process of depositing a diamond film on a cutting tool matrix using vapor chemical deposition and applying a negative bias to the cutting tool so that a bias lower than other electrodes is impressed to the surface of the cutting tool from the outside at the same time, thereby coating on the surface of the tool a diamond film which has fine particle size on the edge compared to the central part of the tool. In a cutting tool on the surface of which diamond film is deposited using vapor chemical deposition, the diamond film deposited cutting tool is characterized in that a diamond film which has a micro particle size of 0.1 to 5 μm and has finer particle size on the edge compared to the central part of the same surface of the tool is coated on the surface of the tool by impressing a negative bias to the cutting tool so that a bias lower than other electrodes is impressed to the surface of the cutting tool from the outside at the same time as the diamond film is being deposited on the cutting tool.
Abstract translation: 目的：提供一种通过在金刚石膜沉积工艺中从外部一致地向切割工具施加负偏压来提纯沉积金刚石膜的颗粒尺寸，特别是切割工具的边缘的粒度的方法，并且沉积金刚石膜 提供了该方法中使用的切削工具。 构成：该方法包括使用蒸汽化学沉积在切割工具基体上沉积金刚石膜并向切割工具施加负偏压的过程，使得比其它电极低的偏压从外部施加到切割工具的表面 同时，与工具的中心部分相比，在工具的表面上涂覆了具有细粒度的金刚石膜。 在使用蒸气化学沉积沉积金刚石膜的表面上的切割工具中，金刚石膜沉积切割工具的特征在于，金刚石膜的微粒径为0.1至5μm，并且在边缘上具有更细的粒径 与工具的相同表面的中心部分相比，通过向切割工具施加负偏压而涂覆在工具的表面上，使得比其他电极低的偏压从外部施加到切割工具的表面 同时金刚石膜被沉积在切割工具上。
-
-
Patent Agency Ranking
公开(公告)号：KR1019950008924B1
公开(公告)日：1995-08-09
申请号：KR1019930005996
申请日：1993-04-09
Applicant: 한국과학기술연구원
IPC: C23C16/26
Abstract: The manufacturing method for a free standing diamond film comprises (A) forming by CVD(chemical vapor deposition) a monolithic diamond film(2) on upper(1a) and lateral(1c) sides of a substrate(1) where the peripheral part(1b) of the upper side has a circular arc-like curvature and (B) making a free standing diamond film by separating the diamond film from the substrate-diamond film monolith, while protecting the substrate from damage caused by shrinkage difference between substrate and diamond film occuring from cooling.
Abstract translation: 独立金刚石膜的制造方法包括：（A）通过CVD（化学气相沉积）在基板（1）的上（1a）和侧（1c）侧上形成单片金刚石膜（2），其中周边部分 1b）具有圆弧状曲率，（B）通过将金刚石膜与基底 - 金刚石膜整料分开来制造自立式金刚石膜，同时保护基板免受基板与金刚石之间的收缩差异的损害 薄膜从冷却发生。
-
-
-
-
公开(公告)号：KR101842964B1
公开(公告)日：2018-03-29
申请号：KR1020160100552
申请日：2016-08-08
Applicant: 한국과학기술연구원
CPC classification number: C25B11/0415 , B82Y30/00 , B82Y40/00 , C23C16/32 , C23C16/503 , C23C16/56 , C25B11/02 , C25B11/0447 , Y02E60/366
Abstract: 텅스텐카바이드나노플레이크(nanoflake)를이용한수소생산용전극의제조방법은, 수소플라즈마가인가되는화학기상증착공정을이용하여, 나노결정다이아몬드박막상에텅스텐카바이드나노플레이크를제조하는단계; 및상기텅스텐카바이드나노플레이크의표면으로부터산화물층또는그래핀층을제거함으로써상기텅스텐카바이드나노플레이크의수소발생반응에대한활성을증가시키는단계를포함한다. 텅스텐카바이드형성후 사이클릭세정(cyclic cleaning)을통하여텅스텐카바이드표면의산화물층및/또는그래핀층을제거함으로써, 텅스텐카바이드의수소발생반응(Hydrogen Evolution Reaction) 활성을증가시켜촉매전극으로서의활용도를높일수 있다.
-
-
-
-
-
-
-
-
-
Search Results
100
records
(took 0.024 seconds)
