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公开(公告)号：KR100462791B1
公开(公告)日：2004-12-20
申请号：KR1020010075409
申请日：2001-11-30
Applicant: 한국과학기술연구원
IPC: G11C11/15
Abstract: PURPOSE: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor is provided to supply a magnetic layer mainly constituted of Co serving as a magnetic field keeper and having an excellent characteristics as a barrier layer. CONSTITUTION: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor includes the steps of: forming an insulating layer(102) on a semiconductor substrate(100), forming a trench in the insulating layer(102) at a predetermined depth by using photolithography method, coating a magnetic keeper layer(106) on the inner and exterior surface of the trench by using a physical vapor deposition method, depositing seed layer made of copper(Cu) on the entire surface of the magnetic keeper layer(106), depositing a conducting layer(110) made of Cu at a predetermined thickness so as to cover the trench(104) formed on the top of the seed layer by using an electroplating method and planarizing the conducting layer(110) by using a chemical mechanical polishing(CMP) method until the top surface of the insulating layer is exposed.
Abstract translation: 目的：提供一种用于制造具有能够应用于磁存储器和传感器的保持层的字线的方法，以提供主要由作为磁场保持器的Co构成并具有优异特性的磁层作为阻挡层。 用于制造具有能够施加到磁存储器和传感器的保持层的字线的方法包括以下步骤：在半导体衬底（100）上形成绝缘层（102）;在绝缘层（100）中形成沟槽 使用光刻法，在沟槽的内外表面上涂布磁性保持层（106），在其整个表面上沉积由铜（Cu）制成的晶种层 磁性保持层（106），以预定厚度沉积由Cu制成的导电层（110），以便通过使用电镀方法覆盖形成在晶种层顶部上的沟槽（104），并平坦化导电层 110）通过使用化学机械抛光（CMP）方法直到绝缘层的顶表面暴露。
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公开(公告)号：KR100452618B1
公开(公告)日：2004-10-15
申请号：KR1020010072201
申请日：2001-11-20
Applicant: 한국과학기술연구원
IPC: G11C11/15
Abstract: PURPOSE: A magnetic memory and word line making method capable of being applied to sensor are provided to realize a pattern with respect to a wordline/bitline to maximize magnetic field required for converting magnetization. CONSTITUTION: An insulation film(102) is formed on a semiconductor substrate(100), and a trench of a predetermined depth is formed by using the insulation film. A seed film(106) is deposited on an entire surface of the trench. A conductive film(108) of a copper material is coated on the seed film so as to cover the trench sufficiently. A CMP process is performed until an upper surface of the insulation film is exposed.
Abstract translation: 目的：提供一种能够应用于传感器的磁存储器和字线制造方法，以实现相对于字线/位线的图案，以最大化转换磁化所需的磁场。 构成：在半导体衬底（100）上形成绝缘膜（102），通过使用绝缘膜形成预定深度的沟槽。 籽晶膜（106）沉积在沟槽的整个表面上。 在籽晶膜上涂覆铜材料的导电膜（108）以充分覆盖沟槽。 执行CMP工艺直到绝缘膜的上表面暴露。
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公开(公告)号：KR1020030044596A
公开(公告)日：2003-06-09
申请号：KR1020010075409
申请日：2001-11-30
Applicant: 한국과학기술연구원
IPC: G11C11/15
Abstract: PURPOSE: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor is provided to supply a magnetic layer mainly constituted of Co serving as a magnetic field keeper and having an excellent characteristics as a barrier layer. CONSTITUTION: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor includes the steps of: forming an insulating layer(102) on a semiconductor substrate(100), forming a trench in the insulating layer(102) at a predetermined depth by using photolithography method, coating a magnetic keeper layer(106) on the inner and exterior surface of the trench by using a physical vapor deposition method, depositing seed layer made of copper(Cu) on the entire surface of the magnetic keeper layer(106), depositing a conducting layer(110) made of Cu at a predetermined thickness so as to cover the trench(104) formed on the top of the seed layer by using an electroplating method and planarizing the conducting layer(110) by using a chemical mechanical polishing(CMP) method until the top surface of the insulating layer is exposed.
Abstract translation: 目的：提供一种具有能够施加到磁存储器和传感器的保持层的字线的制造方法，以提供主要由作为磁场保持器的Co构成的磁性层，并且具有优异的阻挡层特性。 构成：用于制造具有能够施加到磁存储器和传感器的保持层的字线的方法包括以下步骤：在半导体衬底（100）上形成绝缘层（102），在绝缘层中形成沟槽 102），通过使用光刻法在预定深度处，通过使用物理气相沉积法在沟槽的内表面和外表面上涂覆磁保持层（106），在铜的整个表面上沉积由铜（Cu）制成的种子层 磁性保持层（106），以预定厚度沉积由Cu制成的导电层（110），以便通过使用电镀方法覆盖形成在种子层顶部上的沟槽（104）并使导电层平坦化（ 110）通过使用化学机械抛光（CMP）方法直到暴露绝缘层的顶表面。
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公开(公告)号：KR1020020078705A
公开(公告)日：2002-10-19
申请号：KR1020010018724
申请日：2001-04-09
Applicant: 한국과학기술연구원
Abstract: PURPOSE: A composition of FeTiN based soft magnetic film alloy is provided to form the composition having a micro grain structure by using a sputtering method without performing an additional thermal process. CONSTITUTION: A composition of FeTiN based soft magnetic film alloy is FexTiyNz where x,y,z are at% and 85
Abstract translation: 目的：提供基于FeTiN的软磁膜合金的组合物，通过使用溅射法形成具有微晶粒结构的组合物，而不进行额外的热处理。 构成：FeTiN基软磁膜合金的组成为FexTiyNz，其中x，y，z为％，85 <= x <= 95,1 <= y <= 4,1 <= z <= 11（x + y + Z = 100）。 通过在FeTiN系软磁合金的组成中添加Cr，形成FeTiN系软磁膜合金的组成。 Cr的量相当于FeTiN系软磁性合金的总成分的5以下。 通过使用溅射法或物理气相沉积法形成FeTiN基软磁性合金的组成。 在组合物的沉积中，由纳米尺寸的颗粒形成α-Fe，Ti的氮化物和Cr的氮化物。
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公开(公告)号：KR100263741B1
公开(公告)日：2000-08-01
申请号：KR1019980002647
申请日：1998-01-31
Applicant: 한국과학기술연구원
Abstract: PURPOSE: Sm-Fe based or Sm-Fe-B based silicon microcantilever having superior magnetic-transformable property even in the low strength of magnetic field is provided to be suitable for the application to a driving material for micro device such as micro valve and micro pump. CONSTITUTION: In the Smx-Fey based silicon microcantilever, x and y are respectively atomic mass percentage satisfying the follow inequalities: 23≤x≤58 and 42 ≤y≤77(x+y=100). Further, in the Smx-Fey-Bz based silicon microcantilever, x, y and z are atomic mass percentage satisfying the follow inequalities: 23≤x≤57.6 and 42≤y≤ 76.3 and 0.4≤z≤0.7(x+y+z=100).
Abstract translation: 目的：即使在低磁场强度下也具有优异的磁变换性能的Sm-Fe系或Sm-Fe-B系硅微型悬臂梁适用于微型阀和微型微型装置的驱动材料 泵。 构成：在基于Smx-Fey的硅微悬臂梁中，x和y分别是满足以下不等式的原子质量百分比：23≤x≤58和42≤y≤77（x + y = 100）。 此外，在Smx-Fey-Bz基硅微悬臂梁中，x，y和z是满足以下不等式的原子质量百分比：23≤x≤57.6和42≤y≤76.3和0.4≤z≤0.7（x + y + z = 100）。
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Patent Agency Ranking
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公开(公告)号：KR101753342B1
公开(公告)日：2017-07-04
申请号：KR1020160045820
申请日：2016-04-14
Applicant: 한국과학기술연구원
CPC classification number: H01L29/66984 , B82Y10/00 , H01L27/222 , H01L29/045 , H01L29/0673 , H01L29/417 , H01L29/41725 , H01L29/47 , H01L29/82 , H01L43/08 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: 본발명의일 실시예에따른상온작동스핀제어전자소자는, 기판상에위치하고, 제1 방향으로긴 형상을가지며, 제1 방향에수직인제2 방향으로절단된단면이삼각형인저차원나노구조를포함하는전송채널, 기판상에위치하고전송채널과교차되며, 전송채널의일부를덮는소스전극, 그리고기판상에서소스전극과이격되어위치하고, 전송채널과교차되며, 전송채널의일부를덮는드레인전극을포함한다.
Abstract translation: 根据本发明实施例的室温下的旋转控制电子器件包括：低维纳米结构，其位于基板上并且在第一方向上具有长形形状，并且具有在垂直于第一方向的方向上切割的三角形横截面 源电极位于衬底上并与传输通道相交并覆盖传输通道的一部分，漏电极与衬底上的源电极间隔开并与传输通道相交并覆盖传输通道的一部分 的。
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公开(公告)号：KR1020140072983A
公开(公告)日：2014-06-16
申请号：KR1020120140275
申请日：2012-12-05
Applicant: 한국과학기술연구원
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/66984
Abstract: The present invention relates to a lateral spin device. The lateral spin device comprises: a transmission channel which is formed on a substrate; a source which is formed on the transmission channel; and a drain which comprises a drain free layer, a drain middle layer, and a drain fixing layer which are formed on the transmission channel. In the drain, the magnetic direction of the drain free layer against the drain fixing layer is changed by spin electrons which are injected from the source and diffused by the transmission channel.
Abstract translation: 本发明涉及一种横向纺丝装置。 横向自旋装置包括：形成在基板上的传输通道; 形成在传输信道上的源; 以及包括形成在传输通道上的无漏极层，漏极中间层和漏极固定层的漏极。 在漏极中，针对漏极固定层的无漏极层的磁方向由从源极注入并由传输沟道扩散的自旋电子改变。
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公开(公告)号：KR101021899B1
公开(公告)日：2011-03-18
申请号：KR1020090011125
申请日：2009-02-11
Applicant: 한국과학기술연구원
Abstract: 본 발명은 1×10
-9 torr이하의 초진공상태에서 반도체 기판상에 금속 및 비금속 원소를 주입하여, 기판의 밴드 갭보다 큰 밴드 갭을 갖는 반-양자구조물을 자발 형성하는 방법을 개시한다. 본 발명에 의하면, 기존의 양자구조와 전기적 특성을 반대로 하는 반-양자구조물을 별도의 식각공정 없이 자발 형성할 수 있으므로, 반-양자구조물의 생산성을 향상시킬 수 있다. 또한 기판의 온도와 비금속 원소의 주입량을 변화시킴으로써, 반-양자구조물의 크기 및 형태와 밀도를 용이하게 조절할 수 있다. 따라서, 다양한 전기특성을 갖는 반-양자구조물을 제공할 수 있다.
자발 형성, 반-양자구조물, 밴드 갭, 화합물 반도체-
公开(公告)号：KR1020100028727A
公开(公告)日：2010-03-15
申请号：KR1020080087586
申请日：2008-09-05
Applicant: 한국과학기술연구원
IPC: H01L29/78
CPC classification number: H01L29/66984
Abstract: PURPOSE: A spin transistor with enhanced spin injection efficiency is provided improve the spin injection efficiency into a semiconductor channel from a ferromagnetic material by using a MgO tunneling film/ semiconductor lamination structure. CONSTITUTION: A spin transistor(10) comprises a semiconductor substrate(12), a ferromagnetic material source(11), a ferromagnetic material drain(13), a gate electrode(14), and a MgO tunneling film or the organic tunneling film(23). The semiconductor substrate comprises a channel layer(7). The spin-polarized electronic is passed through the channel layer. The ferromagnetic material source implants the electronics spin-polarized to the channel layer. The ferromagnetic material drain detects the spin of the electronics passing through the channel layer. The gate electrode is formed between the source and the drain. A gate voltage is applied to the gate electrode.
Abstract translation: 目的：提供自旋注入效率提高的自旋晶体管通过使用MgO隧道膜/半导体层压结构，提高了从铁磁材料的半导体通道中的自旋注入效率。 构造：自旋晶体管（10）包括半导体衬底（12），铁磁材料源（11），铁磁材料漏极（13），栅电极（14）和MgO隧穿膜或有机隧穿膜 23）。 半导体衬底包括沟道层（7）。 自旋极化电子通过沟道层。 铁磁材料源将电子自旋极化注入沟道层。 铁磁材料漏极检测穿过沟道层的电子器件的旋转。 栅电极形成在源极和漏极之间。 栅极电压施加到栅电极。
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