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公开(公告)号：KR101754277B1
公开(公告)日：2017-07-06
申请号：KR1020140005443
申请日：2014-01-16
Applicant: 한국전자통신연구원
Abstract: 본발명은엑스선튜브에관한것으로, 전자빔과의충돌로써엑스선이발생되는아노드전극, 및상기아노드전극이배치되며상기아노드전극으로부터발생된엑스선이투과하는윈도우를포함한다. 상기아노드전극은상기아노드전극을관통하는채널을포함하고, 상기전자빔은상기채널의내부로제공되어상기엑스선을생성할수 있다.
Abstract translation: 本发明涉及一种X射线管，其包括用于通过与电子束碰撞来产生X射线的阳极电极和从阳极电极产生的X射线所通过的窗口。 阳极电极可以包括通过起始器节点电极的通道，并且电子束可以设置在通道内以产生X射线。
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公开(公告)号：KR1020150112100A
公开(公告)日：2015-10-07
申请号：KR1020140035322
申请日：2014-03-26
Applicant: 한국전자통신연구원
IPC: H01J35/02
Abstract: 본발명은타깃유닛및 그를구비하는엑스선튜브를개시한다. 그의유닛은, 윈도우층과, 상기윈도우층 상에배치된타깃을포함한다. 상기타깃은상기윈도우층을나노사이즈로노출하는 Y자모양의제 1 홀을가질수 있다.
Abstract translation: 公开了一种目标单元和包括该单元的X射线管。 该单元包括窗口层和布置在窗口层上的目标。 目标具有将窗口层作为纳米尺度曝光的y形第一孔。
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公开(公告)号：KR1020140074183A
公开(公告)日：2014-06-17
申请号：KR1020130124816
申请日：2013-10-18
Applicant: 한국전자통신연구원
IPC: H01J35/06
Abstract: The present invention relates to an X-ray tube. According to an aspect of the present invention, the X-ray tube includes: a first housing in which a first X-ray window is formed; a second housing which is rotatable around a rotational shaft installed inside the first housing; an anode which is installed on the rotational shaft inside the second housing and is placed at one side in the extension direction of the rotational shaft; an emitter which is installed on the rotational shaft inside the second housing, is placed at the other side in the extension direction of the rotational shaft, and emits electronic beams; a lens which is installed between the anode and the emitter and collects the electron beams from the emitter to the anode; and an electron beam deflecting unit which deflects the angle of the electron beams moving in a direction from the lens to the anode.
Abstract translation: 本发明涉及一种X射线管。 根据本发明的一个方面，所述X射线管包括：第一壳体，其中形成有第一X射线窗口; 第二壳体，其围绕安装在所述第一壳体内部的旋转轴可旋转; 阳极，其安装在第二壳体内的旋转轴上并且被放置在旋转轴的延伸方向的一侧; 安装在第二壳体内的旋转轴上的发射器被放置在旋转轴的延伸方向上的另一侧，并且发射电子束; 透镜，安装在阳极和发射体之间，并将电子束从发射极收集到阳极; 以及电子束偏转单元，其偏转沿着从透镜到阳极的方向移动的电子束的角度。
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公开(公告)号：KR1020130115978A
公开(公告)日：2013-10-22
申请号：KR1020120136141
申请日：2012-11-28
Applicant: 한국전자통신연구원
IPC: H01J1/30 , H01L29/739
CPC classification number: H01J1/30 , H01L29/739
Abstract: PURPOSE: A current control device and an electric field emission system including the same are provided to connect the current control device to an electric field emission device which emits electron in response to an applied voltage, thereby constantly maintaining a field emission current. CONSTITUTION: A field emission device (110) emits electron in response to an applied voltage. A current control device (120) is connected to the field emission device to control a field emission current. The current control devices comprises a first current control transistor (121), a second current control transistor (122), and a control logic (123). The first current control transistor forms a current path in response to a first gate voltage. The second current control transistor forms a current path in response to a second gate voltage. The control logic uses the first gate voltage to control the threshold of the field emission current. [Reference numerals] (110) Field emission device
Abstract translation: 目的：提供电流控制装置和包括该电流控制装置的电场发射系统，以将电流控制装置连接到响应于所施加的电压发射电子的电场发射装置，从而不断维持场发射电流。 构成：场致发射器件（110）响应于施加的电压发射电子。 电流控制装置（120）连接到场发射装置以控制场致发射电流。 电流控制装置包括第一电流控制晶体管（121），第二电流控制晶体管（122）和控制逻辑（123）。 第一电流控制晶体管响应于第一栅极电压形成电流路径。 第二电流控制晶体管响应于第二栅极电压形成电流路径。 控制逻辑使用第一栅极电压来控制场致发射电流的阈值。 （附图标记）（110）场发射装置
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公开(公告)号：KR1020130034334A
公开(公告)日：2013-04-05
申请号：KR1020110098294
申请日：2011-09-28
Applicant: 한국전자통신연구원
IPC: E06B3/677 , H01L31/042
CPC classification number: C03C27/06 , E06B3/6612 , H01L31/0488 , Y02B10/10 , Y02E10/50 , Y10T156/10
Abstract: PURPOSE: A vacuum window including a solar cell and a manufacturing method thereof are provided to prevent the temperature of a solar cell plate from being increased using a glass including high infrared light reflectivity and by separating the solar cell plate from a plate glass. CONSTITUTION: A vacuum window including a solar cell comprises a first and a second plate glass(201,203), a vacuum layer(205), and a solar cell plate(207). The first plate glass and the second plate glass are connected in vacuum, and the solar cell plate is formed on a second plate glass surface. The solar cell plate is separated from the first plate glass. The first plate glass is formed with a low emissivity glass including high infrared light reflectivity. The solar cell plate is formed as a semi transmission type and is comprised of inorganic materials such as silicon, CIGS, and CdTe. The second plate glass comprises a second plate glass(209) in the opposite direction to the vacuum layer, and an inert gas is injected between the plate glasses.
Abstract translation: 目的：提供一种包括太阳能电池的真空窗及其制造方法，以防止使用包括高红外光反射率的玻璃和通过将太阳能电池板与平板玻璃分离来提高太阳能电池板的温度。 构成：包括太阳能电池的真空窗包括第一和第二平板玻璃（201,203），真空层（205）和太阳能电池板（207）。 第一平板玻璃和第二平板玻璃在真空中连接，太阳能电池板形成在第二平板玻璃表面上。 太阳能电池板与第一平板玻璃分离。 第一平板玻璃由包括高红外光反射率的低辐射玻璃形成。 太阳能电池板形成为半透射型，由无机材料如硅，CIGS和CdTe组成。 第二平板玻璃包括与真空层相反的方向的第二平板玻璃（209），并且在平板玻璃之间注入惰性气体。
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Patent Agency Ranking16.发明公开Ｇｅ기반 금속-절연체 전이(ＭＩＴ) 박막, 그 ＭＩＴ박막을 포함하는 ＭＩＴ 소자 및 그 ＭＩＴ 소자 제조방법 无效基于锗（GE）的金属绝缘体转变（MIT）薄膜，包含相同的薄膜的麻省设备和制造相同的麻省设备的方法
公开(公告)号：KR1020090013657A
公开(公告)日：2009-02-05
申请号：KR1020070123639
申请日：2007-11-30
Applicant: 한국전자통신연구원
IPC: H01L29/772
CPC classification number: H01L49/003
Abstract: A Ge based MIT thin film, the MIT device, the method for manufacturing the same are provided to easily grow the material of the MIT thin film by using the Ge element material. The MIT device comprises the substrate(100), and the Ge base MIT thin film (300a), at least two electrode thin films(410a,420a). The Ge base MIT thin film is formed on the substrate and generates the discontinuity metal-insulator transition(MIT) in the transition voltage. The electrode thin film is contacted with the Ge base MIT thin film. The Ge base MIT thin film causes the discontinuity MIT by voltage or the applied current.
Abstract translation: 提供基于Ge的MIT薄膜，MIT装置及其制造方法，以通过使用Ge元素材料容易地生长MIT薄膜的材料。 MIT装置包括基板（100）和Ge基MIT薄膜（300a），至少两个电极薄膜（410a，420a）。 Ge基MIT薄膜形成在衬底上并产生转变电压中的不连续金属 - 绝缘体转变（MIT）。 电极薄膜与Ge基MIT薄膜接触。 Ge基MIT薄膜通过电压或施加电流导致不连续MIT。
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17.发明授权
公开(公告)号：KR100859717B1
公开(公告)日：2008-09-23
申请号：KR1020070101626
申请日：2007-10-09
Applicant: 한국전자통신연구원
IPC: H01L29/08
CPC classification number: H01L49/003
Abstract: A three terminal MIT(Metal Insulator Transition) switch, a switching system using the same switch, and a method for controlling a MIT of the same switch are provided to control easily a discontinuous MIT jump by adjusting a voltage applied to a control electrode. A three terminal MIT switch includes a two terminal MIT element(100), an inlet electrode(200), an outlet electrode(300), and a control electrode(400). The two terminal MIT element causes discontinuous MIT at a transition voltage. The inlet electrode and the outlet electrode are connected to both ends of the two terminals MIT element. The control electrode is connected to the inlet electrode. The control electrode has an external terminal separated from an external terminal of the inlet electrode. The MIT of the MIT element is controlled by the voltage and current applied to the control electrode.
Abstract translation: 提供三端子MIT（金属绝缘体转换）开关，使用相同开关的开关系统以及用于控制相同开关的MIT的方法，以通过调节施加到控制电极的电压来容易地控制不连续的MIT跳转。 三端MIT开关包括两端MIT元件（100），入口电极（200），出口电极（300）和控制电极（400）。 两端MIT元件在转变电压下引起不连续的MIT。 入口电极和出口电极连接到两个端子MIT元件的两端。 控制电极连接到入口电极。 控制电极具有与入口电极的外部端子分离的外部端子。 MIT元件的MIT由施加到控制电极的电压和电流控制。
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18.发明公开급격한 ＭＩＴ 소자, 그 소자를 이용한 ＭＩＴ 센서 및 그ＭＩＴ 센서를 포함한 경보기 및 이차전지 폭발 방지 회로 失效使用相同的麻醉器装置的破坏金属绝缘子转换（MIT）装置，麻省传感器，以及包含相同的麻省传感器的报警装置和二次电池防爆电路
公开(公告)号：KR1020070115571A
公开(公告)日：2007-12-06
申请号：KR1020060125063
申请日：2006-12-08
Applicant: 한국전자통신연구원
CPC classification number: H01L49/003 , G01K3/005
Abstract: A rapid MIT(Metal-Insulator Transition) device, a MIT sensor using the device, and an alarm and a secondary battery explosion preventing circuit including the MIT sensor are provided to vary a transition temperature by changing an applied voltage or current. An MIT(Metal-Insulator Transition) thin film(300a) generates the rapid MIT at a transition temperature or a transition voltage. At least two electrode thin films(410a,420a) are comprised to be contacted to the rapid MIT thin film. A transition temperature and a transition voltage of the MIT device is changed by a temperature, a microwave, a pressure, a gas concentration or a voltage which is added to the electrode thin films.
Abstract translation: 提供快速MIT（金属绝缘体转换）装置，使用该装置的MIT传感器，以及包括MIT传感器的报警器和二次电池防爆电路，以通过改变所施加的电压或电流来改变转变温度。 MIT（金属 - 绝缘体转移）薄膜（300a）在转变温度或转变电压下产生快速MIT。 包括至少两个电极薄膜（410a，420a）以与快速MIT薄膜接触。 通过温度，微波，压力，气体浓度或添加到电极薄膜的电压来改变MIT器件的转变温度和转变电压。
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公开(公告)号：KR1020150060490A
公开(公告)日：2015-06-03
申请号：KR1020140016088
申请日：2014-02-12
Applicant: 한국전자통신연구원
Abstract: 본발명은전계방출소자및 그제조방법에관한것으로, 전계방출소자는대향하는아노드전극과캐소드전극, 상기아노드전극상에제공된카운터층; 및상기캐소드전극상에제공되고상기카운터층을바라보는전계방출에미터를포함한다. 상기전계방출에미터는냉전자를방출하는탄소나노튜브그리고광전자를방출하는광전물질을포함한다.
Abstract translation: 场致发射器件及其制造方法技术领域本发明涉及场发射器件及其制造方法。 场致发射器件包括彼此面对的阳极电极和阴极电极，形成在阳极电极上的对置层，以及形成在阴极电极上且面向对置层的场致发射体。 场致发射体包括发射冷电子的碳纳米管和发射光电子的光电材料。
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公开(公告)号：KR1020150026730A
公开(公告)日：2015-03-11
申请号：KR1020140005443
申请日：2014-01-16
Applicant: 한국전자통신연구원
Abstract: 본 발명은 엑스선 튜브에 관한 것으로, 전자빔과의 충돌로써 엑스선이 발생되는 아노드 전극, 및 상기 아노드 전극이 배치되며 상기 아노드 전극으로부터 발생된 엑스선이 투과하는 윈도우를 포함한다. 상기 아노드 전극은 상기 아노드 전극을 관통하는 채널을 포함하고, 상기 전자빔은 상기 채널의 내부로 제공되어 상기 엑스선을 생성할 수 있다.
Abstract translation: 本发明涉及一种X射线管。 X射线管包括通过与电子束的碰撞产生X射线的阳极电极和布置有阳极电极的窗口，并且由阳极电极产生的X射线穿过该阳极电极。 阳极电极包括通过阳极电极的通道。 电子束被提供到通道的内侧以产生X射线。
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