公开(公告)号：US20220017554A1

公开(公告)日：2022-01-20

申请号：US17490227

申请日：2021-09-30

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Nana OKADA ,  Akihiro NISHIDA ,  Atsushi YAMASHITA

IPC: C07F15/06 ,  C07C251/08 ,  C23C16/06 ,  C23C16/455

Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. (in the formula, R1 represents a linear or branched alkyl group having 1 to 5 carbon atoms, R2 represents hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents an alkanediyl group having 1 to 4 carbon atoms and M represents copper, iron, nickel, cobalt or manganese.)

公开(公告)号：US20190185994A1

公开(公告)日：2019-06-20

申请号：US16326973

申请日：2017-07-05

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Akihiro NISHIDA ,  Atsushi YAMASHITA

IPC: C23C16/18 ,  C07F15/04 ,  C07F13/00 ,  C23C16/455

CPC classification number: C23C16/18 ,  C07C251/08 ,  C07F13/005 ,  C07F15/04 ,  C07F15/045 ,  C23C16/45553

Abstract: A diazadienyl compound represented by General Formula (I) below: wherein R1 represents a C1-6 linear or branched alkyl group, and M represents nickel atom or manganese atom. In particular, since a compound in which R1 in General Formula (I) is a methyl group has a high vapor pressure and a high thermal decomposition starting temperature, the compound is useful as a raw material for forming a thin film by a CVD method or ALD method.

公开(公告)号：US20190177346A1

公开(公告)日：2019-06-13

申请号：US16308900

申请日：2017-05-15

Applicant: ADEKA CORPORATION

Inventor： Makoto OKABE ,  Akihiro NISHIDA ,  Tomoharu YOSHINO

IPC: C07F9/00 ,  C23C16/455 ,  C23C16/18 ,  C23C16/34

Abstract: A vanadium compound represented by following General Formula (1). In General Formula (1), R1 represents a linear or branched alkyl group having 1 to 7 carbon atoms and n represents a number from 2 to 4. R1 preferably represents a secondary alkyl or a tertiary alkyl. It is preferred that in General Formula (1), n is 2 and R1 is tert-butyl group or tert-pentyl group, since the compound has a broad ALD window and high thermal decomposition temperature to be able to form a good quality vanadium-containing thin film that has a small carbon residue when used as an ALD material.

公开(公告)号：US20220024953A1

公开(公告)日：2022-01-27

申请号：US17312637

申请日：2019-12-03

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Tomoharu YOSHINO ,  Akihiro NISHIDA ,  Atsushi YAMASHITA

IPC: C07F7/22 ,  C23C16/18 ,  C23C16/455

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): where R1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R2 and R3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z1 represents an integer of from 1 to 3.

公开(公告)号：US20220002867A1

公开(公告)日：2022-01-06

申请号：US17291446

申请日：2019-10-28

Applicant: ADEKA CORPORATION

Inventor： Akihiro NISHIDA ,  Masaki ENZU

IPC: C23C16/455 ,  C23C16/18

Abstract: A method of the present invention for producing a metallic ruthenium thin film on a substrate by atomic layer deposition includes: (A) a step of introducing a feedstock gas containing a specific ruthenium compound into a treatment atmosphere, and allowing the ruthenium compound to deposit on the substrate; and a step of introducing a reactive gas containing a specific compound into the treatment atmosphere, and allowing the reactive gas to react with the specific ruthenium compound deposited on the substrate.

公开(公告)号：US20200148706A1

公开(公告)日：2020-05-14

申请号：US16609622

申请日：2018-05-28

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Nana OKADA ,  Akihiro NISHIDA

IPC: C07F5/00 ,  C23C16/40 ,  C23C16/455

Abstract: The present invention provides a metal alkoxide compound represented by the following general formula (1): (in the formula, R1 and R2 each independently represent an alkyl group having 1 to 4 carbon atoms, R3 represents an alkyl group having 2 or 3 carbon atoms, M represents a scandium atom, an yttrium atom, a lanthanum atom, a cerium atom, a praseodymium atom, a neodymium atom, a promethium atom, a samarium atom, a europium atom, a gadolinium atom, a terbium atom, a dysprosium atom, a holmium atom, an erbium atom, a thulium atom, an ytterbium atom, or a lutetium atom, and n represents the valence represented by M.)

公开(公告)号：US20200083520A1

公开(公告)日：2020-03-12

申请号：US16494838

申请日：2018-02-13

Applicant: ADEKA CORPORATION

Inventor： Akihiro NISHIDA ,  Atsushi YAMASHITA

IPC: H01M4/04

Abstract: A method for producing an yttrium oxide-containing thin film by atomic layer deposition, the method comprising: a step for introducing a raw material gas containing tris(sec-butylcyclopentadienyl) yttrium into a treatment atmosphere in order to deposit tris(sec-butylcyclopentadienyl) yttrium on a substrate; and a step for introducing a reactive gas containing water vapor into the treatment atmosphere and causing the reactive gas to react with the tris(sec-butylcyclopentadienyl) yttrium that has been deposited on the substrate, thereby oxidizing yttrium is provided.

公开(公告)号：US20170211184A1

公开(公告)日：2017-07-27

申请号：US15483110

申请日：2017-04-10

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Atsushi SAKURAI ,  Tsubasa SHIRATORI ,  Masako HATASE ,  Hiroyuki UCHIUZOU ,  Akihiro NISHIDA

IPC: C23C16/455 ,  C23C16/40 ,  C07F5/06

CPC classification number: C23C16/45553 ,  C07F5/069 ,  C23C16/06 ,  C23C16/403 ,  C23C16/44

Abstract: The present invention relates to an aluminum compound represented by general formula (I). The present invention also relates to a thin film-forming raw material that contains this aluminum compound. In general formula (I), R1 and R2 each independently denote a straight chain or branched alkyl group having 2-5 carbon atoms, and R3 denotes a methyl group or ethyl group. It is preferable for R1 and R2 to be ethyl groups. This compound has a low melting point, exhibits satisfactory volatility, has high thermal stability, and is suitable for use as a raw material used to form a thin film by a CVD method.

公开(公告)号：US20170050998A1

公开(公告)日：2017-02-23

申请号：US15306807

申请日：2015-03-31

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Atsushi SAKURAI ,  Masako HATASE ,  Hiroyuki UCHIUZOU ,  Akihiro NISHIDA

IPC: C07F15/06 ,  C23C16/44 ,  C23C16/18

CPC classification number: C07F15/065 ,  C07F15/06 ,  C23C16/18 ,  C23C16/44

Abstract: The cobalt compound of this invention is represented by general formula (I) below. In general formula (I), R1 to R3 independently represent a straight chain or branched alkyl group having 1 to 5 carbon atoms. In addition, the thin film-forming raw material of this invention contains the cobalt compound represented by general formula (I). According to this invention, it is possible to provide a cobalt compound which can be transported in the form of a liquid due to having a low melting point, which can be decomposed at a low temperature and which can be easily vaporized due to having a high vapor pressure; and a thin film-forming raw material that uses this cobalt compound.

Abstract translation: 根据本发明的钴化合物由通式（I）表示。 在通式（I）中，R 1至R 3独立地表示具有1至5个碳原子的直链或支链烷基。 根据本发明的用于形成薄膜的原料含有由通式（I）表示的钴化合物。 本发明可以提供：具有低熔点并因此可以以液态运输并且可以在低温下分解并且还具有高蒸气压并因此容易蒸发的钴化合物; 以及使用钴化合物制备的用于形成薄膜的原料。