公开(公告)号：US20170050998A1

公开(公告)日：2017-02-23

申请号：US15306807

申请日：2015-03-31

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Atsushi SAKURAI ,  Masako HATASE ,  Hiroyuki UCHIUZOU ,  Akihiro NISHIDA

IPC: C07F15/06 ,  C23C16/44 ,  C23C16/18

CPC classification number: C07F15/065 ,  C07F15/06 ,  C23C16/18 ,  C23C16/44

Abstract: The cobalt compound of this invention is represented by general formula (I) below. In general formula (I), R1 to R3 independently represent a straight chain or branched alkyl group having 1 to 5 carbon atoms. In addition, the thin film-forming raw material of this invention contains the cobalt compound represented by general formula (I). According to this invention, it is possible to provide a cobalt compound which can be transported in the form of a liquid due to having a low melting point, which can be decomposed at a low temperature and which can be easily vaporized due to having a high vapor pressure; and a thin film-forming raw material that uses this cobalt compound.

Abstract translation: 根据本发明的钴化合物由通式（I）表示。 在通式（I）中，R 1至R 3独立地表示具有1至5个碳原子的直链或支链烷基。 根据本发明的用于形成薄膜的原料含有由通式（I）表示的钴化合物。 本发明可以提供：具有低熔点并因此可以以液态运输并且可以在低温下分解并且还具有高蒸气压并因此容易蒸发的钴化合物; 以及使用钴化合物制备的用于形成薄膜的原料。

公开(公告)号：US20230304154A1

公开(公告)日：2023-09-28

申请号：US18014371

申请日：2021-06-25

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Nana OKADA ,  Ryota FUKUSHIMA

IPC: C23C16/455 ,  C23C16/18

CPC classification number: C23C16/45553 ,  C23C16/18

Abstract: The present invention provides an alkoxide compound represented by the following general formula (1), a thin-film forming raw material containing the compound, and a method of producing a thin-film:





where R1 and R2 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, R3 and R4 each independently represent an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, R5 represents a hydrogen atom, a fluorine atom-containing group, or an alkyl group having 1 to 5 carbon atoms, R6 represents a fluorine atom-containing group, M represents a metal atom or a semimetal atom, and “n” represents the valence of the atom represented by M, provided that when M represents a copper atom, R3 and R4 each independently represent an alkyl group having 1 or 2 carbon atoms, and R5 represents a hydrogen atom.

公开(公告)号：US20180282358A1

公开(公告)日：2018-10-04

申请号：US15996693

申请日：2018-06-04

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Tomoharu YOSHINO ,  Masaki ENZU

IPC: C07F15/06 ,  C07F7/10 ,  C07C251/08 ,  C07C251/76 ,  C23C16/18 ,  C07F15/04 ,  C07F7/08

Abstract: The alkoxide compound of the present invention is characteristically represented by the following general formula (I):

公开(公告)号：US20180037540A1

公开(公告)日：2018-02-08

申请号：US15555215

申请日：2016-02-12

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Akihiro NISHIDA ,  Nana SUGIURA ,  Atsushi SAKURAI ,  Makoto OKABE

IPC: C07C251/08 ,  C23C16/455 ,  C23C16/18

CPC classification number: C07C251/08 ,  C07F15/065 ,  C23C16/18 ,  C23C16/45553 ,  C23C16/45555

Abstract: A diazadienyl compound represented by General Formula (I) below: wherein R1 and R2 each independently represent a C1-6 linear or branched alkyl group, R3 represents hydrogen, or a C1-6 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents a valence of the metal atom or silicon atom represented by M.

公开(公告)号：US20170044188A1

公开(公告)日：2017-02-16

申请号：US15306812

申请日：2015-04-08

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Atsushi SAKURAI ,  Akihiro NISHIDA ,  Makoto OKABE

IPC: C07F1/08 ,  C23C16/455 ,  C23C16/06 ,  C09D5/24 ,  C09D1/00

CPC classification number: C07F1/08 ,  C07C215/08 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285

Abstract: This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R1 to R3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R1 and R2 are a methyl group, R3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R1 is a methyl group and R2 is an ethyl group, R3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

Abstract translation: 该铜化合物由通式（I）表示。 在通式（I）中，R 1 -R 3各自独立地表示具有1-5个碳原子的直链或支链烷基，条件是在R 1和R 2为甲基的情况下，R 3表示直链或支链烷基， 2-5个碳原子，在R1为甲基，R2为乙基的情况下，R3表示甲基或碳原子数为3〜5的直链或支链烷基。 根据本发明的用于形成薄膜的起始材料包含由通式（I）表示的铜化合物。 本发明能够提供一种铜化合物，其具有低熔点并且可以以液态运输，并且具有高蒸气压并易于蒸发; 以及使用该铜化合物的用于形成薄膜的原料。