公开(公告)号：US20240167154A1

公开(公告)日：2024-05-23

申请号：US18280559

申请日：2022-02-24

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Yoshiki OOE ,  Keisuke TAKEDA ,  Chiaki MITSUI ,  Atsushi YAMASHITA

IPC: C23C16/455

CPC classification number: C23C16/45553 ,  C23C16/45527

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1):


M(R1)x1[A1-N(R2)(R3)]y1   (1)

in the formula (1), R1, R2, and R3 each independently represent a linear or branched alkyl group having 1 to 4 carbon atoms, A1 represents a linear or branched alkylene group having 1 to 5 carbon atoms, x1 represents an integer of from 0 to 2, y1 represents an integer of from 1 to 3, and M represents an indium atom or a zinc atom, provided that when M represents an indium atom, a compound in which x1 represents 2, y1 represents 1, and R1, R2, and R3 each represent a methyl group is excluded.

公开(公告)号：US20220389570A1

公开(公告)日：2022-12-08

申请号：US17771181

申请日：2020-10-19

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Masaki ENZU ,  Keisuke TAKEDA ,  Ryota FUKUSHIMA ,  Atsushi YAMASHITA

IPC: C23C16/18 ,  C23C16/455

Abstract: Provided is a thin-film forming raw material containing a compound represented by the following formula (1): in the formula (1), R1 to R5 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and “n” represents a valence of the metal atom represented by M, provided that at least one of R2, R3, and R4 represents the group containing a fluorine atom.

公开(公告)号：US20200055887A1

公开(公告)日：2020-02-20

申请号：US16346724

申请日：2017-10-05

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Nana OKADA ,  Akihiro NISHIDA ,  Atsushi YAMASHITA

IPC: C07F15/06 ,  C07C251/08 ,  C23C16/06 ,  C23C16/455

Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. (in the formula, R1 represents a linear or branched alkyl group having 1 to 5 carbon atoms, R2 represents hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents an alkanediyl group having 1 to 4 carbon atoms and M represents copper, iron, nickel, cobalt or manganese.)

公开(公告)号：US20230041933A1

公开(公告)日：2023-02-09

申请号：US17782403

申请日：2020-12-01

Applicant: ADEKA CORPORATION

Inventor： Akihiro NISHIDA ,  Atsushi YAMASHITA

IPC: C23C16/18 ,  C07F1/08 ,  C09D1/00 ,  C23C16/455

Abstract: Provided is a method of producing a copper-containing layer, including: step 1: a step of reducing a surface of a substrate, provided that a substrate having a surface formed of a silicic acid compound is excluded, through use of a reducing agent; and step 2: a step of forming a copper-containing layer on the surface having been reduced in the step 1 through use of a thin-film forming raw material containing a copper compound by a plasma atomic layer deposition method.

公开(公告)号：US20230002423A1

公开(公告)日：2023-01-05

申请号：US17769458

申请日：2020-10-12

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Yoshiki OOE ,  Atsushi YAMASHITA

IPC: C07F7/22 ,  C23C16/18

Abstract: The present invention provides a tin compound represented by the following general formula (1) (in the formula (1), R1 to R4 each independently represent a hydrogen atom or an alkyl group having 1 to 12 carbon atoms, and R5 represents an alkanediyl group having 1 to 15 carbon atoms), a thin-film forming raw material including the compound, a thin-film formed by using the thin-film forming raw material, a method of using the compound as a precursor for producing the thin-film, and a method of producing a thin-film including: introducing a raw material gas obtained by vaporizing the thin-film forming raw material into a treatment atmosphere having a substrate set therein; and subjecting the tin compound in the raw material gas to decomposition and/or a chemical reaction in the treatment atmosphere, to thereby produce a thin-film containing a tin atom on a surface of the substrate.

公开(公告)号：US20210340162A1

公开(公告)日：2021-11-04

申请号：US17281105

申请日：2019-09-24

Applicant: ADEKA CORPORATION

Inventor： Nana OKADA ,  Tomoharu YOSHINO ,  Atsushi YAMASHITA

IPC: C07F5/00 ,  C23C16/18 ,  C23C16/455

Abstract: The present invention provides a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1): where R1 to R4 each independently represent an alkyl group having 1 to 5 carbon atoms, and A1 represents an alkanediyl group having 1 to 5 carbon atoms.