公开(公告)号：US20230151220A1

公开(公告)日：2023-05-18

申请号：US17915270

申请日：2021-03-18

Applicant: ADEKA CORPORATION

Inventor： Keisuke TAKEDA ,  Masaki ENZU

IPC: C09D1/00 ,  C07F5/00 ,  C23C16/455 ,  C23C16/40

CPC classification number: C09D1/00 ,  C07F5/00 ,  C23C16/40 ,  C23C16/407 ,  C23C16/45525

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented, by the following formula (1) :





where R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, L represents a group represented by the following formula (L-1) or (L-2), and M represents an indium atom or a gallium atom;





where R11 and R12 each independently represent a hydrogen atom, a fluorine atom, an alkyl group having 1 to 5 carbon atoms, or an alkoxy group having 1 to 5 carbon atoms, and * represents a bonding position with M in the formula (1);





where R21 to R23 each independently represent a hydrogen atom, a fluorine atom, or an alkyl group having 1 to 5 carbon atoms, and * represents a bonding position with M in the formula (1), provided that R21 and R22 represent different groups.

公开(公告)号：US20220372056A1

公开(公告)日：2022-11-24

申请号：US17620934

申请日：2020-06-10

Applicant: ADEKA CORPORATION

Inventor： Masaki ENZU ,  Masako HATASE ,  Keisuke TAKEDA

IPC: C07F15/00 ,  C23C16/18

Abstract: The present invention provides a ruthenium compound represented by the following general formula (1) or (2), a thin-film forming raw material containing the ruthenium compound, and a method of producing a thin-film including using the thin-film forming raw material: where R1 to R12 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing group, and “n” represents an integer from 0 to 2, provided that at least one of R1 to R12 represents the fluorine atom-containing group; where R13 to R17 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and a total number of the carbon atoms of R11 to R17 is 3 or more.

公开(公告)号：US20220002867A1

公开(公告)日：2022-01-06

申请号：US17291446

申请日：2019-10-28

Applicant: ADEKA CORPORATION

Inventor： Akihiro NISHIDA ,  Masaki ENZU

IPC: C23C16/455 ,  C23C16/18

Abstract: A method of the present invention for producing a metallic ruthenium thin film on a substrate by atomic layer deposition includes: (A) a step of introducing a feedstock gas containing a specific ruthenium compound into a treatment atmosphere, and allowing the ruthenium compound to deposit on the substrate; and a step of introducing a reactive gas containing a specific compound into the treatment atmosphere, and allowing the reactive gas to react with the specific ruthenium compound deposited on the substrate.

公开(公告)号：US20170050998A1

公开(公告)日：2017-02-23

申请号：US15306807

申请日：2015-03-31

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Atsushi SAKURAI ,  Masako HATASE ,  Hiroyuki UCHIUZOU ,  Akihiro NISHIDA

IPC: C07F15/06 ,  C23C16/44 ,  C23C16/18

CPC classification number: C07F15/065 ,  C07F15/06 ,  C23C16/18 ,  C23C16/44

Abstract: The cobalt compound of this invention is represented by general formula (I) below. In general formula (I), R1 to R3 independently represent a straight chain or branched alkyl group having 1 to 5 carbon atoms. In addition, the thin film-forming raw material of this invention contains the cobalt compound represented by general formula (I). According to this invention, it is possible to provide a cobalt compound which can be transported in the form of a liquid due to having a low melting point, which can be decomposed at a low temperature and which can be easily vaporized due to having a high vapor pressure; and a thin film-forming raw material that uses this cobalt compound.

Abstract translation: 根据本发明的钴化合物由通式（I）表示。 在通式（I）中，R 1至R 3独立地表示具有1至5个碳原子的直链或支链烷基。 根据本发明的用于形成薄膜的原料含有由通式（I）表示的钴化合物。 本发明可以提供：具有低熔点并因此可以以液态运输并且可以在低温下分解并且还具有高蒸气压并因此容易蒸发的钴化合物; 以及使用钴化合物制备的用于形成薄膜的原料。

公开(公告)号：US20220389570A1

公开(公告)日：2022-12-08

申请号：US17771181

申请日：2020-10-19

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Masaki ENZU ,  Keisuke TAKEDA ,  Ryota FUKUSHIMA ,  Atsushi YAMASHITA

IPC: C23C16/18 ,  C23C16/455

Abstract: Provided is a thin-film forming raw material containing a compound represented by the following formula (1): in the formula (1), R1 to R5 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and “n” represents a valence of the metal atom represented by M, provided that at least one of R2, R3, and R4 represents the group containing a fluorine atom.

公开(公告)号：US20200262854A1

公开(公告)日：2020-08-20

申请号：US16760171

申请日：2018-07-27

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Nana OKADA ,  Masako HATASE

IPC: C07F15/00 ,  C23C16/18 ,  C23C16/455 ,  H01L21/285

Abstract: A ruthenium compound represented by a general formula described in the specification, a raw material which is for forming a thin film and which contains the ruthenium compound, and a method of producing a thin film using the raw material for forming a thin film are provided.

公开(公告)号：US20180051372A1

公开(公告)日：2018-02-22

申请号：US15559127

申请日：2016-05-17

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Akihiro NISHIDA ,  Nana SUGIURA

IPC: C23C16/18 ,  C07F15/04 ,  C07F15/06 ,  C07F13/00

CPC classification number: C23C16/18 ,  C07F13/00 ,  C07F13/005 ,  C07F15/04 ,  C07F15/045 ,  C07F15/06 ,  C07F15/065 ,  C23C16/4481 ,  C23C16/45553 ,  H01L21/285

Abstract: A novel compound represented by the general formula (I) or (II) below: [in the formula, each of R1 and R2 independently represent a C1˜12 hydrocarbon group, and Si(R3)3 is optionally substituted for a hydrogen atom in the hydrocarbon group; however, R1 and R2 are different groups; R3 represents a methyl or ethyl group; M represents a metal atom or silicon atom; and n is an integer from 1 to 4].

公开(公告)号：US20170129912A1

公开(公告)日：2017-05-11

申请号：US15318755

申请日：2015-07-16

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Tomoharu YOSHINO ,  Masaki ENZU

IPC: C07F15/06 ,  C07C251/08 ,  C23C16/18 ,  C07C251/76 ,  C07F7/10 ,  C07F15/04 ,  C07F7/08

CPC classification number: C07F15/065 ,  C07C251/08 ,  C07C251/76 ,  C07F7/081 ,  C07F7/10 ,  C07F15/04 ,  C07F15/045 ,  C07F15/06 ,  C23C16/18 ,  C23C16/45525 ,  H01L21/285

Abstract: The alkoxide compound of the present invention is characteristically represented by the following general formula (I):

公开(公告)号：US20170121358A1

公开(公告)日：2017-05-04

申请号：US15303845

申请日：2015-03-30

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Tomoharu YOSHINO ,  Masaki ENZU

IPC: C07F15/06 ,  H01L21/285 ,  C23C16/455 ,  C07C251/08 ,  C23C16/18

CPC classification number: C07F15/06 ,  C07C251/08 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285 ,  H01L21/28556 ,  H01L21/28568

Abstract: An alkoxide compound is represented by General Formula (I) below: wherein R1 to R3 each independently represent hydrogen, a C1-12 hydrocarbon group, etc.; R4 represents a C1-12 hydrocarbon group, etc.; L represents hydrogen, halogen, a hydroxyl group, an amino group, an azi group, a phosphido group, a nitrile group, a carbonyl group, a C1-12 hydrocarbon group, etc.; and M represents a metal atom or a silicon atom, n represents an integer of 1 or more, m represents an integer of 0 or more, and n+m represents the valence of the metal atom or silicon atom.

公开(公告)号：US20160272664A1

公开(公告)日：2016-09-22

申请号：US15032230

申请日：2014-11-07

Applicant: ADEKA CORPORATION

Inventor： Masako HATASE ,  Masaki ENZU ,  Atsushi SAKURAI ,  Tomoharu YOSHINO

IPC: C07F15/00 ,  C23C16/455

CPC classification number: C07F15/0046 ,  C07C225/14 ,  C23C16/16 ,  C23C16/18 ,  C23C16/45553

Abstract: Disclosed is a ruthenium compound useful as a precursor in chemical vapor growth, particularly ALD. The compound has good reactivity with a reactive gas, a high vapor pressure, and a low melting point. The compound is represented by general formula (I), wherein R1, R2, and R3 each independently represent a straight or branched chain alkyl group having 1 to 5 carbon atoms, provided that the total number of the carbon atoms of R1 and R2 is 3 to 10. In formula (I), R1 and R2 are each preferably ethyl or isopropyl.

Abstract translation: 公开了可用作化学气相生长中的前体的钌化合物，特别是ALD。 该化合物与反应性气体具有良好的反应性，高蒸气压和低熔点。 该化合物由通式（I）表示，其中R 1，R 2和R 3各自独立地表示具有1至5个碳原子的直链或支链烷基，条件是R 1和R 2的总碳原子数为3 式（I）中，R 1和R 2各自优选为乙基或异丙基。