公开(公告)号：US20190177346A1

公开(公告)日：2019-06-13

申请号：US16308900

申请日：2017-05-15

Applicant: ADEKA CORPORATION

Inventor： Makoto OKABE ,  Akihiro NISHIDA ,  Tomoharu YOSHINO

IPC: C07F9/00 ,  C23C16/455 ,  C23C16/18 ,  C23C16/34

Abstract: A vanadium compound represented by following General Formula (1). In General Formula (1), R1 represents a linear or branched alkyl group having 1 to 7 carbon atoms and n represents a number from 2 to 4. R1 preferably represents a secondary alkyl or a tertiary alkyl. It is preferred that in General Formula (1), n is 2 and R1 is tert-butyl group or tert-pentyl group, since the compound has a broad ALD window and high thermal decomposition temperature to be able to form a good quality vanadium-containing thin film that has a small carbon residue when used as an ALD material.

公开(公告)号：US20230002423A1

公开(公告)日：2023-01-05

申请号：US17769458

申请日：2020-10-12

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Yoshiki OOE ,  Atsushi YAMASHITA

IPC: C07F7/22 ,  C23C16/18

Abstract: The present invention provides a tin compound represented by the following general formula (1) (in the formula (1), R1 to R4 each independently represent a hydrogen atom or an alkyl group having 1 to 12 carbon atoms, and R5 represents an alkanediyl group having 1 to 15 carbon atoms), a thin-film forming raw material including the compound, a thin-film formed by using the thin-film forming raw material, a method of using the compound as a precursor for producing the thin-film, and a method of producing a thin-film including: introducing a raw material gas obtained by vaporizing the thin-film forming raw material into a treatment atmosphere having a substrate set therein; and subjecting the tin compound in the raw material gas to decomposition and/or a chemical reaction in the treatment atmosphere, to thereby produce a thin-film containing a tin atom on a surface of the substrate.

公开(公告)号：US20210340162A1

公开(公告)日：2021-11-04

申请号：US17281105

申请日：2019-09-24

Applicant: ADEKA CORPORATION

Inventor： Nana OKADA ,  Tomoharu YOSHINO ,  Atsushi YAMASHITA

IPC: C07F5/00 ,  C23C16/18 ,  C23C16/455

Abstract: The present invention provides a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1): where R1 to R4 each independently represent an alkyl group having 1 to 5 carbon atoms, and A1 represents an alkanediyl group having 1 to 5 carbon atoms.

公开(公告)号：US20180282358A1

公开(公告)日：2018-10-04

申请号：US15996693

申请日：2018-06-04

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Tomoharu YOSHINO ,  Masaki ENZU

IPC: C07F15/06 ,  C07F7/10 ,  C07C251/08 ,  C07C251/76 ,  C23C16/18 ,  C07F15/04 ,  C07F7/08

Abstract: The alkoxide compound of the present invention is characteristically represented by the following general formula (I):

公开(公告)号：US20180037540A1

公开(公告)日：2018-02-08

申请号：US15555215

申请日：2016-02-12

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Akihiro NISHIDA ,  Nana SUGIURA ,  Atsushi SAKURAI ,  Makoto OKABE

IPC: C07C251/08 ,  C23C16/455 ,  C23C16/18

CPC classification number: C07C251/08 ,  C07F15/065 ,  C23C16/18 ,  C23C16/45553 ,  C23C16/45555

Abstract: A diazadienyl compound represented by General Formula (I) below: wherein R1 and R2 each independently represent a C1-6 linear or branched alkyl group, R3 represents hydrogen, or a C1-6 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents a valence of the metal atom or silicon atom represented by M.

公开(公告)号：US20170044188A1

公开(公告)日：2017-02-16

申请号：US15306812

申请日：2015-04-08

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Atsushi SAKURAI ,  Akihiro NISHIDA ,  Makoto OKABE

IPC: C07F1/08 ,  C23C16/455 ,  C23C16/06 ,  C09D5/24 ,  C09D1/00

CPC classification number: C07F1/08 ,  C07C215/08 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285

Abstract: This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R1 to R3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R1 and R2 are a methyl group, R3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R1 is a methyl group and R2 is an ethyl group, R3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

Abstract translation: 该铜化合物由通式（I）表示。 在通式（I）中，R 1 -R 3各自独立地表示具有1-5个碳原子的直链或支链烷基，条件是在R 1和R 2为甲基的情况下，R 3表示直链或支链烷基， 2-5个碳原子，在R1为甲基，R2为乙基的情况下，R3表示甲基或碳原子数为3〜5的直链或支链烷基。 根据本发明的用于形成薄膜的起始材料包含由通式（I）表示的铜化合物。 本发明能够提供一种铜化合物，其具有低熔点并且可以以液态运输，并且具有高蒸气压并易于蒸发; 以及使用该铜化合物的用于形成薄膜的原料。

公开(公告)号：US20240018655A1

公开(公告)日：2024-01-18

申请号：US18037206

申请日：2021-11-16

Applicant: ADEKA CORPORATION

Inventor： Akihiro NISHIDA ,  Masako HATASE ,  Tomoharu YOSHINO ,  Yoshiki OOE ,  Chiaki MITSUI

IPC: C23C16/455 ,  C07F7/00 ,  C01G27/02 ,  C23C16/40

CPC classification number: C23C16/45553 ,  C07F7/003 ,  C01G27/02 ,  C23C16/45527 ,  C23C16/405 ,  H01L21/02181

Abstract: Provided is a method of producing a thin-film containing a hafnium atom on a surface of a substrate by an atomic layer deposition method, including: a step 1 of causing a raw material gas obtained by vaporizing a thin-film forming raw material containing a hafnium compound represented by the following general formula (1) to adsorb to the surface of the substrate to form a precursor thin-film; a step 2 of evacuating the raw material gas remaining unreacted; and a step 3 of causing the precursor thin-film to react with a reactive gas at a temperature of 300° C. or more and less than 450° C. to form the thin-film containing a hafnium atom on the surface of the substrate:






wherein R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and R3 and R4 each independently represent an alkyl group having 1 to 3 carbon atoms.

公开(公告)号：US20200262854A1

公开(公告)日：2020-08-20

申请号：US16760171

申请日：2018-07-27

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Nana OKADA ,  Masako HATASE

IPC: C07F15/00 ,  C23C16/18 ,  C23C16/455 ,  H01L21/285

Abstract: A ruthenium compound represented by a general formula described in the specification, a raw material which is for forming a thin film and which contains the ruthenium compound, and a method of producing a thin film using the raw material for forming a thin film are provided.

公开(公告)号：US20200055887A1

公开(公告)日：2020-02-20

申请号：US16346724

申请日：2017-10-05

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Nana OKADA ,  Akihiro NISHIDA ,  Atsushi YAMASHITA

IPC: C07F15/06 ,  C07C251/08 ,  C23C16/06 ,  C23C16/455

Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. (in the formula, R1 represents a linear or branched alkyl group having 1 to 5 carbon atoms, R2 represents hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents an alkanediyl group having 1 to 4 carbon atoms and M represents copper, iron, nickel, cobalt or manganese.)

公开(公告)号：US20180051372A1

公开(公告)日：2018-02-22

申请号：US15559127

申请日：2016-05-17

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Akihiro NISHIDA ,  Nana SUGIURA

IPC: C23C16/18 ,  C07F15/04 ,  C07F15/06 ,  C07F13/00

CPC classification number: C23C16/18 ,  C07F13/00 ,  C07F13/005 ,  C07F15/04 ,  C07F15/045 ,  C07F15/06 ,  C07F15/065 ,  C23C16/4481 ,  C23C16/45553 ,  H01L21/285

Abstract: A novel compound represented by the general formula (I) or (II) below: [in the formula, each of R1 and R2 independently represent a C1˜12 hydrocarbon group, and Si(R3)3 is optionally substituted for a hydrogen atom in the hydrocarbon group; however, R1 and R2 are different groups; R3 represents a methyl or ethyl group; M represents a metal atom or silicon atom; and n is an integer from 1 to 4].