中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

30 records (took 0.031 seconds)

    Lithography method
    11.
    发明专利
    Lithography method 有权
    LITHOGRAPHY方法

    公开(公告)号：JP2007088455A

    公开(公告)日：2007-04-05

    申请号：JP2006237516

    申请日：2006-09-01

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： ZAAL KOEN JACOBUS JOHANNES MAR ,  DE KORT ANTONIUS J ,  DE JONG FREDERIK E ,  GOORMAN KOEN ,  MENCHTCHIKOV BORIS ,  PEN HERMEN F

    IPC: H01L21/027 ,  G03F9/00

    CPC classification number: G03F7/70633 ,  G03F7/70341 ,  G03F7/7045 ,  G03F7/70458

    Abstract: PROBLEM TO BE SOLVED: To solve a problem of an overlay error by substrate cooling action connected with the vaporization of high refractive index liquid which exists on a substrate. SOLUTION: In the calibration of overlay property, position error data of a first set is obtained by carrying out the exposure of a first substrate (S1) during a first test exposure sequence using a test structure of the first set and measuring the test structure (S2). Then, the identical substrate (S3) is exposed to the test structure of a second set identical to the first set during a second test exposure sequence using a second course which is equivalent to the first course but in which movement is caused in a reverse direction state. The error data of the second set is obtained by measuring the structure of the second set (S4). Influence by wafer cooling can be removed by using these two data sets. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：通过与存在于​​基板上的高折射率液体的蒸发相关的基板冷却动作来解决重叠误差的问题。 解决方案：在叠加属性的校准中，通过使用第一组的测试结构在第一测试曝光序列期间执行第一衬底（S1）的曝光来获得第一组的位置误差数据，并且测量 测试结构（S2）。 然后，在第二测试曝光序列期间，将相同的基板（S3）暴露于与第一组相同的第二组的测试结构，该测试结构使用等同于第一过程的第二过程，但是在相反方向上发生移动 州。 通过测量第二组的结构（S4）获得第二组的误差数据。 通过使用这两个数据集可以消除晶片冷却的影响。 版权所有（C）2007，JPO＆INPIT

    Lithography equipment and device manufacturing method
    12.
    发明专利
    Lithography equipment and device manufacturing method 有权
    LITHOGRAPHY设备和设备制造方法

    公开(公告)号：JP2006128682A

    公开(公告)日：2006-05-18

    申请号：JP2005310028

    申请日：2005-10-25

    Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

    Inventor： OTTENS JOOST JEROEN ,  MERTENS JEROEN JOHANNES SOPHIA ,  DE JONG FREDERIK EDUARD ,  GOORMAN KOEN ,  MENCHTCHIKOV BORIS ,  VAN GOMPEL EDWIN AUGUSTINUS MA

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: H01L21/67109 ,  G03F7/70341 ,  G03F7/707 ,  G03F7/70783 ,  G03F7/70875

    Abstract: PROBLEM TO BE SOLVED: To provide lithography equipment and a device manufacturing method.
    SOLUTION: Lithography equipment has a substrate support formed such that it supports a substrate, and a projection system formed such that it projects a patterned radiation beam to a target part of the substrate. The substrate support is operated such that the substrate is moved along a specified path of the target part as the next target of the substrate. The substrate support has a duct fabric for thermally stabilizing the substrate. This duct fabric supplies a thermal stabilization medium to the substrate through the duct, and removes the thermal stabilization medium virtually using the duct from a portion of the substrate support that supports the target part via the substrate support part that supports the target part preceding the substrate, thereby maintaining the target part as a next target thermally stably.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：提供光刻设备和设备制造方法。 解决方案：平版印刷设备具有形成为支撑基板的基板支撑件和形成为使得其将图案化的辐射束投影到基板的目标部分的投影系统。 操作基板支撑件，使得基板沿着目标部件的指定路径移动，作为基板的下一个目标。 衬底支撑件具有用于热稳定衬底的管道织物。 这种管道织物通过管道向基底提供热稳定介质，并且通过经由基板支撑部分支撑目标部分的衬底支撑部分，基本上使用来自支撑目标部分的基板支撑件的管道的热稳定介质， 从而热稳定地将目标部分保持为下一个目标。 版权所有（C）2006，JPO＆NCIPI

    LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD.
    16.
    发明专利
    LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD. 未知

    公开(公告)号：NL2006002A

    公开(公告)日：2011-08-22

    申请号：NL2006002

    申请日：2011-01-14

    Applicant: ASML NETHERLANDS BV

    Inventor： PADIY ALEXANDRE VIKTOROVYCH ,  MENCHTCHIKOV BORIS

    IPC: G03F7/20

    Abstract: A method controls a scanning function of a lithographic apparatus. A first alignment strategy is used. A monitor wafer is exposed to determine baseline control parameters pertaining to the scanning function. The baseline control parameters are periodically retrieved from the monitor wafer. Parameter drift is determined from the baseline control parameters. Corrective action is taken based on the determination. A production wafer is exposed using a second alignment strategy, different to the first alignment strategy. The corrective action is modified so as to be substantially closer to the correction that would have been made had the second alignment strategy been used in exposing the monitor wafer.

    METHOD AND ARRANGEMENT FOR PREDICTING THERMALLY-INDUCED DEFORMATION OF A SUBSTRATE, AND A SEMICONDUCTOR DEVICE
    17.
    发明专利
    METHOD AND ARRANGEMENT FOR PREDICTING THERMALLY-INDUCED DEFORMATION OF A SUBSTRATE, AND A SEMICONDUCTOR DEVICE 未知

    公开(公告)号：SG131880A1

    公开(公告)日：2007-05-28

    申请号：SG2006071203

    申请日：2006-10-12

    Applicant: ASML NETHERLANDS BV

    Inventor： MENCHTCHIKOV BORIS ,  DE JONG FREDERIK EDUARD

    Abstract: The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally- induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre- specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.

    Lithographic apparatus and device manufacturing method
    19.
    发明专利
    Lithographic apparatus and device manufacturing method 未知

    公开(公告)号：SG122045A1

    公开(公告)日：2006-05-26

    申请号：SG200508465

    申请日：2005-10-25

    Applicant: ASML NETHERLANDS BV

    Inventor： OTTENS JOOST JEROEN ,  MERTENS JEROEN JOHANNES SOPHIA ,  JONG DE FREDERIK EDUARD ,  GOORMAN KOEN ,  MENCHTCHIKOV BORIS ,  GOMPEL VAN EDWIN AUGUSTINUS MA

    Abstract: A lithographic apparatus includes a substrate support (2) that is constructed to support a substrate (6), and a projection system (4) that is configured to project a patterned radiation beam (5) onto a target portion of the substrate. The substrate support is arranged to move the substrate along a predetermined trajectory (7) of subsequently targeted target portions of the substrate. The substrate support includes a duct configuration (1) for providing thermal stabilization to the substrate. The duct configuration is arranged to duct thermally stabilizing media in the support, and to substantially duct the media away from a part of the substrate support that supports the target portion via parts of the substrate support that support previously targeted portions of the substrate, so as to keep subsequently targeted target portions thermally stable.

Patent Agency Ranking