公开(公告)号：JP2013038413A

公开(公告)日：2013-02-21

申请号：JP2012158755

申请日：2012-07-17

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： BESSEMS DAVID ,  EUMMELEN ERIK HENRICUS EGIDIUS CATHARINA ,  CORTILE ROGER HENDRIKUS MAGDALENA ,  RIEPEN MICHAEL ,  ROPS CORNELIUS MARIA

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70341 ,  Y10T137/2931

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus in which the likelihood of bubble inclusion in an immersion liquid is at least reduced.SOLUTION: A fluid handling structure for a lithographic apparatus comprises at a boundary of a space configured to contain immersion fluid to a region external to the fluid handling structure: a meniscus pinning feature to resist passage of immersion fluid in a radially outward direction from the space; a gas supply opening at least partly surrounding and radially outward of the meniscus pinning feature; and optionally a gas recovery opening radially outward of the gas supply opening. The gas supply opening, or the gas recovery opening, or both the gas supply opening and the gas recovery opening, has an open area per meter length which has a variation around the space.

Abstract translation: 要解决的问题：提供其中至少减少浸入液体中气泡夹杂的可能性的光刻设备。 解决方案：用于光刻设备的流体处理结构包括在被配置为将浸没流体包含在流体处理结构外部的区域的空间的边界处：弯月面钉扎特征，以阻止浸没流体沿径向向外的方向 从空间; 至少部分地围绕所述弯液面钉扎特征并径向向外的气体供应开口; 以及任选的气体回收开口，其在气体供给开口的径向外侧。 气体供给开口或气体回收开口，或者气体供给口和气体回收开口两者都具有围绕空间变化的每米长度的开放面积。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013021332A

公开(公告)日：2013-01-31

申请号：JP2012154531

申请日：2012-07-10

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： ROGIER HENDRIX MAGDALENA CORTIE ,  RIEPEN MICHEL ,  ROPS CORNELIUS MARIA

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70483 ,  G03F7/70341

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus in which the likelihood of bubble inclusion is at least reduced.SOLUTION: A fluid handling structure for a lithographic apparatus comprises at a boundary from a space configured to contain immersion fluid to a region external to the fluid handling structure: meniscus pinning features to resist passage of immersion fluid in a radially outward direction from the space; a plurality of gas supply openings in a linear array; and at least one gas recovery opening placed radially outside of the plurality of gas supply openings in a linear array. The plurality of gas supply openings at least partly surround the meniscus pinning features, and are placed radially outside of the meniscus pinning features.

Abstract translation: 要解决的问题：提供其中气泡夹杂的可能性至少降低的光刻设备。 解决方案：用于光刻设备的流体处理结构包括在从被配置为将浸没流体包含在流体处理结构外部的区域的边界处的边界处：弯月面钉扎特征以阻止浸没流体沿径向向外的方向从 空间; 线性阵列中的多个气体供给开口; 以及至少一个气体回收开口，其以多个气体供给开口径向外侧设置成线性阵列。 多个气体供应开口至少部分地围绕弯液面钉扎特征，并且被放置在半月板钉扎特征的径向外侧。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2011124573A

公开(公告)日：2011-06-23

申请号：JP2010271352

申请日：2010-12-06

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： ROPS CORNELIUS MARIA ,  KEMPER NICOLAAS R ,  RIEPEN MICHEL

IPC: H01L21/027

CPC classification number: G03F7/70341

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus capable of at least reducing the possibility of mixing of bubbles. SOLUTION: An immersion lithographic apparatus is disclosed. The immersion lithographic apparatus includes a fluid handling system which confines immersion liquid to be within a local space between a final element of a projection system and a substrate and/or a table, and a gas supply device which supplies gas of which solubility in the immersion liquid is higher than 5x10 -3 mol/kg, at a total pressure of 1 atm and 20°C into a region that adjoins the space. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供能够至少降低气泡混合的可能性的光刻设备。 解决方案：公开了一种浸没式光刻设备。 浸没式光刻设备包括将浸没液体限制在投影系统的最终元件与基板和/或台之间的局部空间内的流体处理系统，以及供应在浸没中的溶解度的气体的气体供应装置 液体高于5×10 -3 SPM / kg，在1atm和20℃的总压力下进入与该空间相邻的区域。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010141325A

公开(公告)日：2010-06-24

申请号：JP2009277243

申请日：2009-12-07

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： KEMPER NICOLAAS R ,  VAN BALLEGOIJ ROBERTUS NICODEMUS JACOBUS ,  VERMAELEN MARKUS MARTINUS PETRUS ADRIANUS ,  RIEPEN MICHEL ,  VAN DEN HEUVEL MARTINUS WILHELMUS ,  BERKVENS PAUL PETRUS JOANNES ,  METSENAERE CHRISTOPHE DE ,  VAN DE WINKEL JIMMY MATHEUS WILHELMUS ,  ROPS CORNELIUS MARIA

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70341 ,  F01N1/023 ,  G03F7/709

Abstract: PROBLEM TO BE SOLVED: To provide a fluid handling system in which a vibration produced by two phase extraction is reduced or eliminated. SOLUTION: A liquid-immersion lithography usually is equipped with a fluid handling system. The handling system generally has a two phase fluid extraction system which removes a mixture of a gas and a liquid from a predetermined place. Since the extract fluid contains two phases, the pressure in the extract system varies sometimes. It is likely that the pressure variation passes through the liquid-immersion liquid to cause an incorrect exposing light. A buffer chamber can be used to reduce the pressure variation in the extract system. The buffer chamber may be connected to the fluid extract system in order to provide a fixed volume of gas to reduce the pressure variation. Substitutively or additionally, a flexible wall portion may be provided to somewhere in the fluid extract system. The flexible wall portion may respond to the pressure variation in the fluid extract system to change its shape. The change of the shape may be a help when the flexible wall portion reduces or eliminates the pressure variation. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种流体处理系统，其中减少或消除由两相萃取产生的振动。

解决方案：液浸光刻通常配备有流体处理系统。 处理系统通常具有从预定位置去除气体和液体的混合物的两相流体萃取系统。 由于萃取液含有两相，萃取系统中的压力有时会变化。 压力变化很可能通过液浸液体导致不正确的曝光。 可以使用缓冲室来减少提取系统中的压力变化。 缓冲室可以连接到流体提取系统，以提供固定体积的气体以减小压力变化。 替代地或另外地，柔性壁部分可以设置在流体提取系统的某处。 柔性壁部分可以响应于流体提取系统中的压力变化以改变其形状。 当柔性壁部分减小或消除压力变化时，形状的变化可能是有帮助的。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：WO2016096508A9

公开(公告)日：2016-11-10

申请号：PCT/EP2015078842

申请日：2015-12-07

Applicant: ASML NETHERLANDS BV

Inventor： ROPS CORNELIUS MARIA ,  STALS WALTER THEODORUS MATHEUS ,  BESSEMS DAVID ,  GATTOBIGIO GIOVANNI LUCA ,  BLANCO CARBALLO VICTOR MANUEL ,  EUMMELEN ERIK HENRICUS EGIDIUS CATHARINA ,  VAN DER HAM RONALD ,  VAN DER ZANDEN FREDERIK ANTONIUS ,  WERNAART WILHELMUS ANTONIUS

IPC: G03F7/20 ,  B01D19/00

CPC classification number: G03B27/52 ,  B01D19/0005 ,  B01D19/0021 ,  G03F7/70341 ,  G03F7/70716 ,  G03F7/70775

Abstract: A fluid handling structure for a lithographic apparatus configured to contain immersion fluid to a region, the fluid handling structure having, at a boundary of a space: at least one gas knife opening in a radially outward direction of the space; and at least one gas supply opening in the radially outward direction of the at least gas knife opening relative to the space. The gas knife opening and the gas supply opening both provide substantially pure CO2 gas so as to provide a substantially pure CO2 gas environment adjacent to, and radially outward of, the space.

Abstract translation: 一种用于光刻设备的流体处理结构，其被配置为将浸没流体包含在区域中，所述流体处理结构在空间的边界处具有：在所述空间的径向向外的方向上的至少一个气刀开口; 以及至少一个气体供应开口，其在所述至少气刀开口的径向向外方向上相对于所述空间。 气刀开口和气体供应开口都提供基本上纯的CO 2气体，以便在空间附近和径向向外提供基本上纯的CO 2气体环境。

公开(公告)号：SG11201609642QA

公开(公告)日：2016-12-29

申请号：SG11201609642Q

申请日：2015-05-12

Applicant: ASML NETHERLANDS BV

Inventor： VAN BEUZEKOM AART ADRIANUS ,  ALBERTI JOZEF AUGUSTINUS MARIA ,  SEGERS HUBERT MARIE ,  VAN DER HAM RONALD ,  FAHRNI FRANCIS ,  OLIESLAGERS RUUD ,  PIETERSE GERBEN ,  ROPS CORNELIUS MARIA ,  VAN DEN EIJNDEN PEPIJN ,  VAN DONGEN PAUL ,  WILLEMS BAS

IPC: G03F7/20

Abstract: A lithographic apparatus includes a substrate table, a post-exposure handling module, a substrate handling robot and a drying station. The substrate table is configured to support a substrate for an exposure process. The post-exposure handling module is configured to handle the substrate post-exposure. The substrate handling robot is configured to transfer the substrate from the substrate table along a substrate unloading path into the post-exposure handling module. The drying station is configured to actively remove liquid from a surface of the substrate. The drying station is located in the substrate unloading path. The drying station is located in the post-exposure handling module. The post-exposure handling module may be a substrate handler.