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    리소그래피 장치, 투영 시스템, 마지막 렌즈 요소, 액체 제어 부재, 및 디바이스 제조 방법
    2.
    发明公开
    리소그래피 장치, 투영 시스템, 마지막 렌즈 요소, 액체 제어 부재, 및 디바이스 제조 방법 审中-公开
    光刻设备，投影系统，最后一个透镜元件，液体控制元件和器件制造方法

    公开(公告)号：KR20180030148A

    公开(公告)日：2018-03-21

    申请号：KR20187004424

    申请日：2016-07-13

    Applicant: ASML NETHERLANDS BV

    Inventor： ROPS CORNELIUS MARIA ,  BOUMAN WILLEM JAN ,  POLET THEODORUS WILHELMUS

    IPC: G03F7/20 ,  G02B27/00

    CPC classification number: G03F7/70783 ,  G02B27/0006 ,  G03F7/2041 ,  G03F7/70891 ,  G03F7/70958

    Abstract: 리소그래피장치, 침지리소그래피장치와함께사용되는투영시스템, 투영시스템을위한마지막렌즈요소, 액체제어부재및 디바이스제조방법이개시된다. 일구성에서, 리소그래피장치는투영시스템을통해기판(W)의타겟부상으로패터닝된방사선빔(B)을투영하도록구성되는투영시스템(PS)을포함한다. 액체한정구조체(12)는투영시스템과기판사이의공간(10)에침지액체를한정한다. 투영시스템은출구표면을통해패터닝된방사선빔을투영하기위한출구표면(104); 및액체한정구조체와대향하는추가표면(110)을포함한다. 추가표면은침지액체에대해제 1 정적후진접촉각도를갖는다. 출구표면은침지액체에대해제 2 정적후진접촉각도를갖는다. 제 1 정적후진접촉각도는제 2 정적후진접촉각도보다크고; 65°미만이다.

    Abstract translation: 公开了一种光刻设备，用于浸没式光刻设备的投影系统，用于投影系统的最后一个透镜元件，液体控制构件以及器件制造方法。 在一种配置中，光刻设备包括投影系统PS，投影系统PS被配置为通过投影系统将图案化的辐射束B投影到衬底W的目标部分上。 液体限制结构12在投影系统和衬底之间的空间10中限定浸没液体。 投影系统包括用于将图案化的辐射束投影穿过出射表面的出射表面（104） 和与液体限制结构相对的附加表面（110）。 附加表面相对于浸没液体具有第一静态后向接触角。 出口表面相对于浸没液体具有第二静态背接触角。 第一静态背接触角大于第二静态背接触角; Lt。

    Fluid handling structure, lithographic apparatus and device manufacturing method
    3.
    发明专利
    Fluid handling structure, lithographic apparatus and device manufacturing method 有权
    流体处理结构，平面设备和设备制造方法

    公开(公告)号：JP2013021331A

    公开(公告)日：2013-01-31

    申请号：JP2012154530

    申请日：2012-07-10

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： ROGIER HENDRIX MAGDALENA CORTIE ,  KATE NICOLAAS TEN ,  ROSET NIEK JACOBUS JOHANNES ,  RIEPEN MICHEL ,  CASTELIJNS HENRICUS JOZEF ,  ROPS CORNELIUS MARIA ,  JIM VINCENT OVERKAMP

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/70866 ,  G03F7/70341

    Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus in which the likelihood of bubble inclusion is at least reduced.SOLUTION: A fluid handling structure for a lithographic apparatus comprises at a boundary from a space configured to contain immersion fluid to a region external to the fluid handling structure: meniscus pinning features to resist passage of the immersion fluid in a radially outward direction from the space; and a plurality of gas supply openings in a linear array. The plurality of gas supply openings at least partly surround one or more of the meniscus pinning features, and are placed radially outside of the meniscus pinning features. The plurality of gas supply openings in a linear array are of a similar or the same size.

    Abstract translation: 要解决的问题：提供其中气泡夹杂的可能性至少降低的光刻设备。 解决方案：用于光刻设备的流体处理结构包括在从被配置为将浸没流体包含在流体处理结构外部的区域的空间的边界处：弯液面钉扎特征以阻止浸没流体沿径向向外的方向 从空间; 以及线性阵列中的多个气体供给开口。 多个气体供应开口至少部分地围绕弯月面钉扎特征中的一个或多个，并且被放置在半月板钉扎特征的径向外侧。 线性阵列中的多个气体供给开口具有相似或相同的尺寸。 版权所有（C）2013，JPO＆INPIT

    Lithographic apparatus and device manufacturing method
    4.
    发明专利
    Lithographic apparatus and device manufacturing method 有权
    LITHOGRAPHIC装置和装置制造方法

    公开(公告)号：JP2013251580A

    公开(公告)日：2013-12-12

    申请号：JP2013187139

    申请日：2013-09-10

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： ROPS CORNELIUS MARIA ,  KEMPER NICOLAAS R ,  RIEPEN MICHEL

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/70341

    Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus capable of at least reducing possibility of mixing of bubbles.SOLUTION: An immersion lithographic apparatus is disclosed. The immersion lithographic apparatus comprises: a fluid handling system for confining immersion liquid to be within a local space between a final element of a projection system and a substrate and/or a table; and a gas supply device for supplying gas whose solubility in the immersion liquid is higher than 5×10mol/kg, at a total pressure of 1 atm and 20°C into a region that adjoins the space.

    Abstract translation: 要解决的问题：提供能够至少降低气泡混合可能性的光刻设备。解决方案：公开了一种浸没式光刻设备。 浸没式光刻设备包括：用于将浸没液体限制在投影系统的最终元件与基板和/或台之间的局部空间内的流体处理系统; 以及用于将在浸液中的溶解度高于5×10mol / kg的气体的气体供给装置，在1atm和20℃的总压力下进入与该空间相邻的区域。

    Fluid handling structure, lithographic apparatus and device manufacturing method
    7.
    发明专利
    Fluid handling structure, lithographic apparatus and device manufacturing method 有权
    流体处理结构，平面设备和设备制造方法

    公开(公告)号：JP2013065829A

    公开(公告)日：2013-04-11

    申请号：JP2012175659

    申请日：2012-08-08

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： BESSEMS DAVID ,  ROPS CORNELIUS MARIA

    IPC: H01L21/027

    CPC classification number: G03F7/70341 ,  Y10T137/8593

    Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus in which mixing of gas from and external to a fluid handling structure is at least partly reduced or prevented.SOLUTION: A fluid handling structure for a lithographic apparatus has, at a boundary of a space configured to contain immersion fluid to a region external to the fluid handling structure, a gas supply opening provided radially outward of the space, a fluid recovery opening provided radially outward of the gas supply opening, and a damper surface extending at least 0.5 mm radially outward from the fluid recovery opening along the undersurface of the fluid handling structure.

    Abstract translation: 要解决的问题：提供一种光刻设备，其中至少部分地减少或防止流体处理结构中和外部的气体的混合。 解决方案：用于光刻设备的流体处理结构在被配置为将浸没流体包含在流体处理结构外部的区域的边界处具有在该空间的径向外侧设置的气体供给开口，流体回收 设置在气体供给开口的径向外侧的开口部以及沿着流体处理结构的下表面沿流体回收开口径向向外延伸至少0.5mm的阻尼器表面。 版权所有（C）2013，JPO＆INPIT

    Fluid extraction system, lithographic apparatus and device manufacturing method
    8.
    发明专利
    Fluid extraction system, lithographic apparatus and device manufacturing method 审中-公开
    流体萃取系统，光刻装置和装置制造方法

    公开(公告)号：JP2012156556A

    公开(公告)日：2012-08-16

    申请号：JP2012113069

    申请日：2012-05-17

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： KEMPER NICOLAAS R ,  VAN BALLEGOIJ ROBERTUS NICODEMUS JACOBUS ,  VERMAELEN MARKUS MARTINUS PETRUS ADRIANUS ,  RIEPEN MICHAEL ,  VAN DEN HEUVEL MARTINUS WILHELMUS ,  BERKVENS PAUL PETRUS JOANNES ,  METSENAERE CHRISTOPHE DE ,  VAN DE WINKEL JIMMY MATHEUS WILHELMUS ,  ROPS CORNELIUS MARIA

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/70341 ,  F01N1/023 ,  G03F7/709

    Abstract: PROBLEM TO BE SOLVED: To provide a fluid handling system in which vibrations generated by two-phase extraction are reduced or eliminated.SOLUTION: An immersion lithographic apparatus typically includes a fluid handling system. The fluid handling system generally has a two-phase fluid extraction system configured to remove a mixture of gas and liquid from a given location. Because the extraction fluid comprises two phases, the pressure in the extraction system can vary. This pressure variation can be passed through the immersion liquid and cause inaccuracy in the exposure. To reduce the pressure fluctuation in the extraction system, a buffer chamber may be used. This buffer chamber may be connected to the fluid extraction system in order to provide a volume of gas which reduces pressure fluctuation. Alternatively or additionally, a flexible wall may be provided somewhere in the fluid extraction system. The flexible wall may change shape in response to a pressure change in the fluid extraction system. By changing shape, the flexible wall can help to reduce, or eliminate, the pressure fluctuation.

    Abstract translation: 要解决的问题：提供一种流体处理系统，其中减少或消除由两相萃取产生的振动。 解决方案：浸没式光刻设备通常包括流体处理系统。 流体处理系统通常具有配置成从给定位置去除气体和液体的混合物的两相流体萃取系统。 因为提取液包含两相，所以提取系统中的压力可以变化。 该压力变化可以通过浸没液体并导致曝光不准确。 为了减少提取系统中的压力波动，可以使用缓冲室。 该缓冲室可以连接到流体提取系统，以便提供减小压力波动的一定体积的气体。 或者或另外，柔性壁可以设置在流体提取系统的某处。 响应于流体提取系统中的压力变化，柔性壁可以改变形状。 通过改变形状，柔性壁可以帮助减少或消除压力波动。 版权所有（C）2012，JPO＆INPIT

    Fluid handling structure, lithography device, and device manufacturing method
    9.
    发明专利
    Fluid handling structure, lithography device, and device manufacturing method 有权
    流体处理结构，光刻设备和器件制造方法

    公开(公告)号：JP2012089843A

    公开(公告)日：2012-05-10

    申请号：JP2011226698

    申请日：2011-10-14

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： BESSEMS DAVID ,  ROGIER HENDRIX MAGDALENA CORTIE ,  MARKUS JOHANNES VAN DER ZANDEN ,  ROPS CORNELIUS MARIA ,  PAUL WILLEMS ,  VAN DE WINKEL JIMMY MATHEUS WILHELMUS ,  EUMMELEN ERIK HENRICUS EGIDIUS CATHARINA

    IPC: H01L21/027

    CPC classification number: G03F7/70341

    Abstract: PROBLEM TO BE SOLVED: To provide a lithography device, for example, in which possibility of creating air bubbles is at least reduced.SOLUTION: A fluid handling structure for a lithography device has one or more meniscus nailing characteristic parts for resisting passage of a liquid-immersion fluid from a space outward in a radial direction at a boundary from a space for housing the liquid-immersion fluid to a region outside the fluid handling structure, a gas supply opening outside the one or more meniscus nailing characteristic parts in the radial direction, and at least one gas recovery opening located outside the one or more meniscus nailing characteristic parts in the radial direction and at least partially surrounding the gas supply opening.

    Abstract translation: 要解决的问题：提供例如至少减少产生气泡的可能性的光刻设备。 解决方案：用于光刻装置的流体处理结构具有一个或多个弯月面钉钉特征部件，用于抵抗液浸液体从用于容纳浸液的空间的边界处的径向向外的空间的通道 流体到流体处理结构外部的区域，在径向上的一个或多个月牙形钉钉特征部分外侧的气体供给开口，以及位于径向方向上的一个或多个弯液面钉钉特征部分外侧的至少一个气体回收开口，以及 至少部分地围绕气体供应开口。 版权所有（C）2012，JPO＆INPIT

    Fluid handling structure, lithographic apparatus and device manufacturing method
    10.
    发明专利
    Fluid handling structure, lithographic apparatus and device manufacturing method 有权
    流体处理结构，平面设备和设备制造方法

    公开(公告)号：JP2014150270A

    公开(公告)日：2014-08-21

    申请号：JP2014063559

    申请日：2014-03-26

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： ROGIER HENDRIX MAGDALENA CORTIE ,  MICHEL RIEPEN ,  ROPS CORNELIUS MARIA

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/70483 ,  G03F7/70341

    Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus in which the likelihood of bubble inclusion is at least reduced.SOLUTION: A fluid handling structure for a lithographic apparatus comprises at a boundary from a space configured to contain immersion fluid to a region external to the fluid handling structure: meniscus pinning features to resist passage of immersion fluid in a radially outward direction from the space; a plurality of gas supply openings in a linear array; and at least one gas recovery opening placed radially outside of the plurality of gas supply openings in a linear array. The plurality of gas supply openings at least partly surround the meniscus pinning features, and are placed radially outside of the meniscus pinning features.

    Abstract translation: 要解决的问题：提供其中气泡夹杂的可能性至少降低的光刻设备。解决方案：用于光刻设备的流体处理结构包括在从被配置为将浸没流体包含浸没流体的空间的边界处 流体处理结构：弯月面钉扎特征，以阻止浸没流体沿径向向外的方向从该空间通过; 线性阵列中的多个气体供给开口; 以及至少一个气体回收开口，其以多个气体供给开口径向外侧设置成线性阵列。 多个气体供应开口至少部分地围绕弯液面钉扎特征，并且被放置在半月板钉扎特征的径向外侧。

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