ACID-SENSITIVE, DEVELOPER-SOLUBLE BOTTOM ANTI-REFLECTIVE COATINGS
    11.
    发明申请
    ACID-SENSITIVE, DEVELOPER-SOLUBLE BOTTOM ANTI-REFLECTIVE COATINGS 审中-公开
    酸敏感,显影剂可溶底部防反射涂层

    公开(公告)号:WO2010096615A3

    公开(公告)日:2010-12-09

    申请号:PCT/US2010024664

    申请日:2010-02-19

    CPC classification number: G03F7/091

    Abstract: Acid-sensitive, developer-soluble bottom anti-reflective coating compositions are provided, along with methods of using such compositions and microelectronic structures formed thereof. The compositions preferably comprise a crosslinkable polymer dissolved or dispersed in a solvent system. The polymer preferably comprises recurring monomelic units having adamantyl groups. The compositions also preferably comprise a crosslinker, such as a vinyl ether crosslinking agent, dispersed or dissolved in the solvent system with the polymer. In some embodiments, the composition can also comprise a photoacid generator (PAG) and/or a quencher. The bottom anti- reflective coating compositions are thermally crosslinkable, but can be decrosslinked in the presence of an acid to be rendered developer soluble.

    Abstract translation: 提供酸敏敏的显影剂可溶性底部抗反射涂层组合物,以及使用这种组合物和由其形成的微电子结构的方法。 该组合物优选包含溶解或分散在溶剂体系中的可交联聚合物。 该聚合物优选包含具有金刚烷基的重复单体单元。 该组合物还优选包含与聚合物一起分散或溶解在溶剂体系中的交联剂,例如乙烯基醚交联剂。 在一些实施方案中,组合物还可以包含光酸产生剂(PAG)和/或猝灭剂。 底部抗反射涂料组合物是可热交联的,但可以在酸存在下解交联以使显影剂可溶。

    SILYL ACRYLATE AND POSS COMPOSITIONS USED IN MICROLITHOGRAPHIC PROCESSES
    12.
    发明申请
    SILYL ACRYLATE AND POSS COMPOSITIONS USED IN MICROLITHOGRAPHIC PROCESSES 审中-公开
    硅胶丙烯酸酯和组合物用于微晶工艺

    公开(公告)号:WO2004076465A3

    公开(公告)日:2005-06-02

    申请号:PCT/US2004005753

    申请日:2004-02-24

    CPC classification number: G03F7/0751 C08F230/08 Y10T428/31663

    Abstract: New lithographic compositions (e.g., for use as middle layers in trilayer processes) are provided. In one embodiment, the compositions comprise an organo­silicon polymer dispersed or dissolved in a solvent system, and preferably a crosslinking agent and a catalyst. In another embodiment, the organo-silicon polymer is replaced with a polyhedral oligomeric silsesquioxane-containing polymer and/or a polyhedral oligomeric silsesquioxane. In either embodiment, the polymer and/or compound should also include -OH groups for proper cross-linking of the composition. When used as middle layers, these compositions can be applied as very thin films with a very thin layer of photoresist being applied to the top of the middle layer. Thus, the underlying bottom anti-reflective coating is still protected even though the overall stack (i.e., anti-reflective coating plus middle layer plus photoresist) is still thin compared to prior art stacks.

    Abstract translation: 提供了新的平版印刷组合物(例如,用作三层工艺中的中间层)。 在一个实施方案中,组合物包含分散或溶解在溶剂体系中,优选交联剂和催化剂的有机硅聚合物。 在另一个实施方案中,有机硅聚合物被多面体低聚倍半硅氧烷的聚合物和/或多面体低聚倍半硅氧烷代替。 在任一实施方案中,聚合物和/或化合物还应包括用于组合物正确交联的-OH基团。 当用作中间层时,这些组合物可以作为非常薄的膜施加,其中非常薄的光致抗蚀剂层被施加到中间层的顶部。 因此,与现有技术的堆叠相比,即使整个叠层(即,抗反射涂层加中间层加光致抗蚀剂)仍然很薄,底层的抗反射涂层仍然被保护。

    SILYL ACRYLATE AND POSS COMPOSITIONS USED IN MICROLITHOGRAPHIC PROCESSES
    13.
    发明申请
    SILYL ACRYLATE AND POSS COMPOSITIONS USED IN MICROLITHOGRAPHIC PROCESSES 审中-公开
    硅胶丙烯酸酯和组合物用于微晶工艺

    公开(公告)号:WO2004076465A8

    公开(公告)日:2006-11-30

    申请号:PCT/US2004005753

    申请日:2004-02-24

    CPC classification number: G03F7/0751 C08F230/08 Y10T428/31663

    Abstract: New lithographic compositions (e.g., for use as middle layers in trilayer processes) are provided. In one embodiment, the compositions comprise an organo­silicon polymer dispersed or dissolved in a solvent system, and preferably a crosslinking agent and a catalyst. In another embodiment, the organo-silicon polymer is replaced with a polyhedral oligomeric silsesquioxane-containing polymer and/or a polyhedral oligomeric silsesquioxane. In either embodiment, the polymer and/or compound should also include -OH groups for proper cross-linking of the composition. When used as middle layers, these compositions can be applied as very thin films with a very thin layer of photoresist being applied to the top of the middle layer. Thus, the underlying bottom anti-reflective coating is still protected even though the overall stack (i.e., anti-reflective coating plus middle layer plus photoresist) is still thin compared to prior art stacks.

    Abstract translation: 提供了新的平版印刷组合物(例如,用作三层工艺中的中间层)。 在一个实施方案中,组合物包含分散或溶解在溶剂体系中的有机硅聚合物,优选交联剂和催化剂。 在另一个实施方案中,有机硅聚合物被多面体低聚倍半硅氧烷的聚合物和/或多面体低聚倍半硅氧烷代替。 在任一实施方案中,聚合物和/或化合物还应包括用于组合物正确交联的-OH基团。 当用作中间层时,这些组合物可以用作非常薄的薄膜,其中非常薄的光致抗蚀剂层被施加到中间层的顶部。 因此,与现有技术的堆叠相比,即使整个叠层(即,抗反射涂层加中间层加光致抗蚀剂)仍然很薄,底层的抗反射涂层仍然被保护。

    ACID-SENSITIVE, DEVELOPER-SOLUBLE BOTTOM ANTI-REFLECTIVE COATINGS
    17.
    发明公开
    ACID-SENSITIVE, DEVELOPER-SOLUBLE BOTTOM ANTI-REFLECTIVE COATINGS 审中-公开
    ÄEN EN EN EN EN EN EN EN EN EN EN EN EN EN EN EN EN EN EN EN

    公开(公告)号:EP2399169A4

    公开(公告)日:2012-10-10

    申请号:EP10744334

    申请日:2010-02-19

    CPC classification number: G03F7/091

    Abstract: Acid-sensitive, developer-soluble bottom anti-reflective coating compositions are provided, along with methods of using such compositions and microelectronic structures formed thereof. The compositions preferably comprise a crosslinkable polymer dissolved or dispersed in a solvent system. The polymer preferably comprises recurring monomeric units having adamantyl groups. The compositions also preferably comprise a crosslinker, such as a vinyl ether crosslinking agent, dispersed or dissolved in the solvent system with the polymer. In some embodiments, the composition can also comprise a photoacid generator (PAG) and/or a quencher. The bottom anti-reflective coating compositions are thermally crosslinkable, but can be decrosslinked in the presence of an acid to be rendered developer soluble.

    Abstract translation: 提供了酸敏感的,显影剂可溶的底部抗反射涂层组合物,以及使用这些组合物的方法和由其形成的微电子结构。 组合物优选包含溶解或分散在溶剂体系中的可交联聚合物。 聚合物优选包含具有金刚烷基的重复单体单元。 组合物还优选包含与聚合物分散或溶解在溶剂体系中的交联剂,例如乙烯基醚交联剂。 在一些实施方案中,组合物还可以包含光酸产生剂(PAG)和/或猝灭剂。 底部抗反射涂层组合物是可热交联的,但可以在酸的存在下去交联以显影剂可溶。

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