公开(公告)号：HK1016744A1

公开(公告)日：1999-11-05

申请号：HK99101507

申请日：1999-04-12

Applicant: CANDESCENT TECH CORP

Inventor： SPINDT CHRISTOPHER J ,  CHAKAROVA GABRIELA S ,  NIKOLOVA MARIA S ,  SEARSON PETER C ,  HAVEN DUANE A ,  KNALL NILS JOHAN ,  MACAULAY JOHN C ,  BARTON ROGER W

IPC: B81C1/00 ,  C25F3/14 ,  H01J9/02 ,  H01J

Abstract: An electrochemical technique is employed for removing certain material from a partially finished structure without significantly chemically attacking certain other material of the same chemical type as the removed material. The partially finished structure contains a first electrically non-insulating layer (52C) consisting at least partially of first material, typically excess emitter material that accumulates during the deposition of the emitter material to form electron-emissive elements (52A) in an electron emitter, that overlies an electrically insulating layer (44). An electrically non-insulating member, such as an electron-emissive element, consisting at least partially of the first material is situated at least partly in an opening (50) extending through the insulating layer. With the partially finished structure so arranged, at least part of the first material of the first non-insulating layer is electrochemically removed such that the non-insulating member is exposed without significantly attacking the first material of the non-insulating member.

公开(公告)号：HK1019462A1

公开(公告)日：2000-02-11

申请号：HK99104647

申请日：1999-10-20

Applicant: CANDESCENT TECH CORP

Inventor： HAVEN DUANE A ,  SLUZKY ESTHER ,  MACAULAY JOHN M

IPC: C25D13/02 ,  C25D13/12 ,  H01J9/02 ,  C25D ,  H01J

Abstract: A method for creating a solid layer (36A or 52A) through which openings (38 or 54) extend entails subjecting particles (30) suspended in a fluid (26) to an electric field (EA) to cause a number of the particles to move towards, and accumulate over, a structure placed in the fluid. The structure, including the so-accumulated particles, is removed from the fluid. Solid material is deposited over the structure at least in the space between the so-accumulated particles. The particles, including any overlying material (36B or 52B), are removed. The remaining solid material forms the solid layer through which openings extend at the locations of the so-removed particles. The structure is typically a layer is then typically either a gate layer for the electron-emitting device or a layer used in forming the gate layer.\!

公开(公告)号：EP1316099A4

公开(公告)日：2005-12-21

申请号：EP01959303

申请日：2001-07-27

Applicant: CANDESCENT TECH CORP

Inventor： MACKEY BOB L ,  HAVEN DUANE A ,  LEARN ARTHUR J ,  PORTER JOHN D ,  FAHLEN THEODORE S

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304 ,  H01J1/70 ,  H01J9/22 ,  H01J9/227 ,  H01J29/04 ,  H01J29/06 ,  H01J29/08 ,  H01J29/28 ,  H01J29/32 ,  H01J31/12 ,  H01J19/24

CPC classification number: H01J1/304 ,  H01J29/06 ,  H01J29/085 ,  H01J31/127 ,  H01J2201/02 ,  H01J2211/36 ,  H01J2329/00

Abstract: A protected faceplate structure (900) includes a faceplate (100) and a barrier layer (902) of silica. The faceplate (100) may be made of soda glass, and the barrier layer (902) may be made of silica.

公开(公告)号：EP0993513A4

公开(公告)日：2001-04-04

申请号：EP98931401

申请日：1998-06-29

Applicant: CANDESCENT TECH CORP

Inventor： KNALL N JOHAN ,  PORTER JOHN D ,  SPINDT CHRISTOPHER J ,  CHAKAROVA GABRIELA S ,  HAVEN DUANE A ,  MACAULAY JOHN C ,  BARTON ROGER W ,  NIKOLOVA MARIA S ,  SEARSON PETER C

IPC: C25F5/00 ,  C25F3/02 ,  C25F3/14 ,  H01J9/02 ,  C25D5/02 ,  B23H3/00 ,  B44C1/22 ,  C25D5/48 ,  C25F3/00 ,  H01J1/02 ,  H01J1/62

CPC classification number: H01J9/025

Abstract: An impedance-assisted electrochemical procedure is employed for selectively removing certain material from a structure without significantly electrochemically attacking, and thus without significantly removing, certain other material of the same chemical type as the removed material.

Abstract translation: 阻抗辅助电化学过程被用于选择性地从结构中去除某些材料，而不显着电化学攻击，因而不除去显着相同的化学类型的，某些其他材料作为移除的材料。

公开(公告)号：EP1018131A4

公开(公告)日：2000-07-19

申请号：EP97926809

申请日：1997-06-05

Applicant: CANDESCENT TECH CORP

Inventor： HAVEN DUANE A ,  LUDWIG PAUL N ,  SPINDT CHRISTOPHER J ,  DOBKIN DANIEL M

IPC: H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J2329/00

Abstract: A gated electron-emitter is fabricated by a process in which particles (26) are deposited over an insulating layer (24). Gate material is provided over the insulating layer in the space between the particles after which the particles and any overlying material are removed. The remaining gate material forms a gate layer (28A or 48A) through which gate openings (30 or 50) extend at the locations of the removed particles. When the gate material deposition is performed so that part of the gate material extends into the spaces below the particles, the gate openings are beveled. The insulating layer is etched through the gate openings to form dielectric openings (32 or 52). Electron-emissive elements (36A or 56A) are formed in the dielectric openings. This typically involves introducing emitter material through the gate openings into the dielectric openings and using a lift-off layer (34), or an electrochemical technique, to remove excess emitter material.