Abstract:
A multi-level matrix structure for frictionally retaining a support structure within a flat panel display device. In one embodiment, the present invention is comprised of a multi-level matrix structure. The multi-level matrix structure of the present embodiment is comprised of a first multi-layered structure disposed on an inner surface of a faceplate of a flat panel display device. The multi-level matrix structure of the present embodiment is further comprised of a plurality of substantially parallel spaced apart ridges. In this embodiment, the plurality of substantially parallel spaced apart ridges overlie the first multi-layered structure. Additionally, in this embodiment, the plurality of substantially parallel spaced apart ridges include contact portions for frictionally retaining a support structure in a first direction at a desired location within the flat panel display device.
Abstract:
Multiple procedures are presented for removing contaminant material (12) from electron-emissive elements (10) of an electron-emitting device (30). One procedure involves converting the contaminant material into gaseous products (14), typically by operating the electron-emissive elements, that move away from the electron-emissive elements. Another procedure entails converting the contaminant material into further material (16) and removing the further material. An additional procedure involves forming surface coatings (18 or 20) over the electron-emissive elements. The contaminant material is then removed directly from the surface coatings or by removing at least part of each surface coating.
Abstract:
A multi-level matrix structure for frictionally retaining a support structure within a flat panel display device. In one embodiment, the present invention is comprised of a multi-level matrix structure. The multi-level matrix structure of the present embodiment is comprised of a first multi-layered structure disposed on an inner surface of a faceplate of a flat paneldisplay device. The multi-level matrix structure of the present embodiment is further comprised of a plurality of substantially parallel spaced apart ridges. In this embodiment, the plurality of substantially parallel spaced apart ridges overlie the first multi-layered structure. Additionally,in this embodiment, the plurality of substantially parallel spaced apart ridges include contact portions for frictionally retaining a support structure in a first direction at a desired location within the flat panel display device.
Abstract:
A protected faceplate structure (900) includes a faceplate (100) and a barrier layer (902) of silica. The faceplate (100) may be made of soda glass, and the barrier layer (902) may be made of silica.
Abstract:
Material of a given chemical type is selectively electrochemically removed from a structure by subjecting portions of the structure to an electrolytic bath (62). The characteristics of certain parts of the structure are chosen to have electrochemical reduction half-cell potentials that enable removal of the undesired material to be achieved in the bath without applying external potential to any part of the structure. The electrolytic bath (62) can be implemented with liquid that is inherently corrosive to, or inherently benign to, material of the chemical type being selectively removed.
Abstract:
Multiple procedures are presented for removing contaminant material (12) from electron-emissive elements (10) of an electron-emitting device (30). One procedure involves converting the contaminant material into gaseous products (14), typically by operating the electron-emissive elements, that move away from the electron-emissive elements. Another procedure entails converting the contaminant material into further material (16) and removing the further material. An additional procedure involves forming surface coatings (18 or 20) over the electron-emissive elements. The contaminant material is then removed directly from the surface coatings or by removing at least part of each surface coating.
Abstract:
An impedance-assisted electrochemical procedure is employed for selectively removing certain material from a structure without significantly electrochemically attacking, and thus without significantly removing, certain other material of the same chemical type as the removed material.
Abstract:
A method for forming a field emitter structure in which a cavity (208) is formed into an insulating layer (206) overlaying a first electrically conductive layer (202). A second electrically conductive layer (210) with an opening (212) is formed above the cavity. Electron emissive material (214) is deposited directly onto the second electrically conductive layer without first depositing an underlying lift-off layer. Electron emissive material covers the opening in the second electrically conductive layer and forms an electron emissive element (216) within the cavity. A first potential is imparted to the electron emissive element. A second open circuit potential is imparted to the closure layer of electron emissive material. The field emitter structure is exposed to an electrochemical etchant (220) wherein the electrochemical etchant etches electron emissive material which is biased at open circuit potential. Electron emissive material is removed from above the second electrically conductive layer without etching the electron emissive element.