Gripping multi-level structure
    11.
    发明专利

    公开(公告)号:AU7903401A

    公开(公告)日:2002-02-13

    申请号:AU7903401

    申请日:2001-07-26

    Abstract: A multi-level matrix structure for frictionally retaining a support structure within a flat panel display device. In one embodiment, the present invention is comprised of a multi-level matrix structure. The multi-level matrix structure of the present embodiment is comprised of a first multi-layered structure disposed on an inner surface of a faceplate of a flat panel display device. The multi-level matrix structure of the present embodiment is further comprised of a plurality of substantially parallel spaced apart ridges. In this embodiment, the plurality of substantially parallel spaced apart ridges overlie the first multi-layered structure. Additionally, in this embodiment, the plurality of substantially parallel spaced apart ridges include contact portions for frictionally retaining a support structure in a first direction at a desired location within the flat panel display device.

    Cleaning of electron-emissive elements

    公开(公告)号:HK1031154A1

    公开(公告)日:2001-06-01

    申请号:HK01100498

    申请日:2001-01-19

    Abstract: Multiple procedures are presented for removing contaminant material (12) from electron-emissive elements (10) of an electron-emitting device (30). One procedure involves converting the contaminant material into gaseous products (14), typically by operating the electron-emissive elements, that move away from the electron-emissive elements. Another procedure entails converting the contaminant material into further material (16) and removing the further material. An additional procedure involves forming surface coatings (18 or 20) over the electron-emissive elements. The contaminant material is then removed directly from the surface coatings or by removing at least part of each surface coating.

    SELECTIVE REMOVAL OF MATERIAL USING SELF-INITIATED GALVANIC ACTIVITY IN ELECTROLYTIC BATH
    15.
    发明公开
    SELECTIVE REMOVAL OF MATERIAL USING SELF-INITIATED GALVANIC ACTIVITY IN ELECTROLYTIC BATH 审中-公开
    材料的选择性去除采用自主发起的电偶活动在电解槽

    公开(公告)号:EP1032726A4

    公开(公告)日:2004-09-29

    申请号:EP98946862

    申请日:1998-09-21

    CPC classification number: H01J9/025

    Abstract: Material of a given chemical type is selectively electrochemically removed from a structure by subjecting portions of the structure to an electrolytic bath (62). The characteristics of certain parts of the structure are chosen to have electrochemical reduction half-cell potentials that enable removal of the undesired material to be achieved in the bath without applying external potential to any part of the structure. The electrolytic bath (62) can be implemented with liquid that is inherently corrosive to, or inherently benign to, material of the chemical type being selectively removed.

    CLEANING OF ELECTRON-EMISSIVE ELEMENTS
    16.
    发明公开
    CLEANING OF ELECTRON-EMISSIVE ELEMENTS 有权
    SAÜBERUNG的电子发射元件

    公开(公告)号:EP1021818A4

    公开(公告)日:2001-04-04

    申请号:EP98950613

    申请日:1998-09-22

    CPC classification number: H01J9/025

    Abstract: Multiple procedures are presented for removing contaminant material (12) from electron-emissive elements (10) of an electron-emitting device (30). One procedure involves converting the contaminant material into gaseous products (14), typically by operating the electron-emissive elements, that move away from the electron-emissive elements. Another procedure entails converting the contaminant material into further material (16) and removing the further material. An additional procedure involves forming surface coatings (18 or 20) over the electron-emissive elements. The contaminant material is then removed directly from the surface coatings or by removing at least part of each surface coating.

    FIELD EMITTER FABRICATION USING OPEN CIRCUIT ELECTROCHEMICAL LIFT OFF
    18.
    发明公开
    FIELD EMITTER FABRICATION USING OPEN CIRCUIT ELECTROCHEMICAL LIFT OFF 失效
    FELDEMITTERHERSTELLUNG DURCH LFT OFF MIT OFFENEM SCHALTKREIS

    公开(公告)号:EP0998597A4

    公开(公告)日:2000-05-10

    申请号:EP98906269

    申请日:1998-02-10

    CPC classification number: H01J9/025

    Abstract: A method for forming a field emitter structure in which a cavity (208) is formed into an insulating layer (206) overlaying a first electrically conductive layer (202). A second electrically conductive layer (210) with an opening (212) is formed above the cavity. Electron emissive material (214) is deposited directly onto the second electrically conductive layer without first depositing an underlying lift-off layer. Electron emissive material covers the opening in the second electrically conductive layer and forms an electron emissive element (216) within the cavity. A first potential is imparted to the electron emissive element. A second open circuit potential is imparted to the closure layer of electron emissive material. The field emitter structure is exposed to an electrochemical etchant (220) wherein the electrochemical etchant etches electron emissive material which is biased at open circuit potential. Electron emissive material is removed from above the second electrically conductive layer without etching the electron emissive element.

    Abstract translation: 一种形成场致发射结构的方法。 在一个实施例中,本发明产生了一种结构,其具有形成为覆盖在第一导电层上的绝缘层的空腔。 本发明还产生了第二导电层,其具有形成在绝缘层中的空腔上方的开口。 本实施例将电子发射材料层直接沉积到第二导电层上,而不首先沉积下面的剥离层,使得电子发射材料覆盖第二导电层中的开口并在腔内形成电子发射元件 。 本发明将第一电位施加到第一导电层,使得第一电位被赋予形成在空腔内的电子发射元件。 本发明还将第二电位施加到第二导电层,使得第二电位被赋予电子发射材料的封闭层。 在本实施例中,第二电位包括开路电位。 本发明然后将场发射体结构暴露于电化学蚀刻剂,其中电化学蚀刻剂蚀刻电子发射材料,该电子发射材料偏置于开路电位。 在这样做时,电子发射材料层从第二导电层上方去除,而不蚀刻形成在空腔内的电子发射元件。

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