公开(公告)号：DE60026184T2

公开(公告)日：2006-11-23

申请号：DE60026184

申请日：2000-01-19

Applicant: CANON KK

Inventor： AMEMIYA MITSUAKI

IPC: C30B11/00 ,  G01K7/02

Abstract: A process for crystal growth in which a single crystal is grown while solidifying a melted crystal material is disclosed. The process uses a heat gradient within a temperature range including a melting point of the crystal material to be grown and comprises the steps of: detecting a temperature distribution within a plane of the cross section of a crucible (3) holding the crystal material; and controlling the temperature distribution detected during crystal growth such that the temperature at a center portion of the crucible (3) is minimized in the cross section. Further a crystal growth apparatus is provided. This crystal growth apparatus comprises: a crucible (3) for holding a crystal material (4); a heating means (1a, 1b) for forming at the periphery of the crucible (3) a heat gradient within a temperature range including a melting point of the crystal material (4); a supporting means (7) for supporting and for moving a center bottom of the crucible (3); a cooling means (10) provided at the supporting means (7); and a temperature detecting means (18) for detecting a temperature distribution within a plane of the cross section of the crucible (3), wherein the heating means (1a, 1b) and the cooling means (10) are controlled such that in the temperature distribution detected during crystal growth by the temperature detecting means, the temperature at a center portion of the crucible (3) is minimized in the cross section.

公开(公告)号：DE60026184D1

公开(公告)日：2006-04-27

申请号：DE60026184

申请日：2000-01-19

Applicant: CANON KK

Inventor： AMEMIYA MITSUAKI

IPC: C30B11/00 ,  G01K7/02

Abstract: A process for crystal growth in which a single crystal is grown while solidifying a melted crystal material is disclosed. The process uses a heat gradient within a temperature range including a melting point of the crystal material to be grown and comprises the steps of: detecting a temperature distribution within a plane of the cross section of a crucible (3) holding the crystal material; and controlling the temperature distribution detected during crystal growth such that the temperature at a center portion of the crucible (3) is minimized in the cross section. Further a crystal growth apparatus is provided. This crystal growth apparatus comprises: a crucible (3) for holding a crystal material (4); a heating means (1a, 1b) for forming at the periphery of the crucible (3) a heat gradient within a temperature range including a melting point of the crystal material (4); a supporting means (7) for supporting and for moving a center bottom of the crucible (3); a cooling means (10) provided at the supporting means (7); and a temperature detecting means (18) for detecting a temperature distribution within a plane of the cross section of the crucible (3), wherein the heating means (1a, 1b) and the cooling means (10) are controlled such that in the temperature distribution detected during crystal growth by the temperature detecting means, the temperature at a center portion of the crucible (3) is minimized in the cross section.

公开(公告)号：DE69033791T2

公开(公告)日：2002-05-23

申请号：DE69033791

申请日：1990-10-19

Applicant: CANON KK

Inventor： TANAKA YUTAKA ,  MIZUSAWA NOBUTOSHI ,  KARIYA TAKAO ,  UZAWA SHUNICHI ,  AMEMIYA MITSUAKI

IPC: G21K5/00 ,  G03F7/20 ,  H01L21/027

Abstract: An X-ray exposure apparatus, for transferring a pattern of the mask (13) to a wafer (15), includes an X-ray source accommodating chamber (50); a mask chuck (14) for supporting the mask; a wafer chuck (16) for supporting the wafer; a stage (18) for moving the wafer chuck; a stage accommodating chamber (19) for accommodating therein the mask chuck, the wafer chuck and the stage; a barrel (5) for coupling the X-ray source accommodating chamber with the stage accommodating chamber, to define an X-ray projection passageway (30); a blocking window (6) provided in the X-ray projection passageway, for isolating the ambience in the X-ray accommodating chamber and the ambience in the stage accommodating chamber from each other; and a gas supply port (3) contributable to fill the stage accommodating chamber with a gas ambience of low X-ray absorption. The gas supply port opens to the X-ray projection passageway at a position between the blocking window and the mask supported by the mask chuck.

公开(公告)号：DE69031699T2

公开(公告)日：1998-04-02

申请号：DE69031699

申请日：1990-07-11

Applicant: CANON KK

Inventor： AMEMIYA MITSUAKI ,  HARA SHINICHI ,  SAKAMOTO EIJI

IPC: H01L21/30 ,  G03F7/20 ,  H01L21/027 ,  H01L21/683 ,  H01L21/00 ,  H05K13/00

Abstract: A substrate holding device includes a holding table having a reduced pressure passageway; a pressure gauge for measuring a value related to the pressure in the reduced pressure passageway; a pump for producing a pressure difference between a first surface of the substrate to be attracted to the holding table and a second surface of the substrate not to be attracted to the holding table; a valve which can be opened/closed for control of the pressure in the reduced pressure passageway; a pressure control system for controlling the opening/closing of the valve on the basis of an output corresponding to the value measured by the pressure gauge; and a temperature control system for controlling the temperature of the holding table.

公开(公告)号：DE68926873D1

公开(公告)日：1996-08-29

申请号：DE68926873

申请日：1989-10-04

Applicant: CANON KK

Inventor： TANAKA YUTAKA ,  MIZUSAWA NOBUTOSHI ,  AMEMIYA MITSUAKI ,  KARIYA TAKAO ,  SHIMODA ISAMU

IPC: G21K5/00 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30

公开(公告)号：DE68923638D1

公开(公告)日：1995-09-07

申请号：DE68923638

申请日：1989-03-28

Applicant: CANON KK

Inventor： AMEMIYA MITSUAKI ,  UZAWA SHUNICHI

IPC: G03F1/00

Abstract: A method and apparatus for inspecting and repairing a mask usable in manufacture of semiconductor microcircuits, by using an electron beam is disclosed. The inspection and repair of a mask pattern are made in a single apparatus, by using a controlled current of electron beam. For inspection, the surface of a mask (4) having a mask pattern (3) and a radiation-sensitive layer (5), covering it, is scanned with an electron beam (6) and, by detecting (7) secondary electrons or reflected electrons caused at that time, the state of the pattern is inspected. If any defect is detected (12-15), the portion of the radiation-sensitive layer on the detected defect is irradiated with an electron beam of greater magnitude than that for the inspection and, thereafter, the exposed portion of the radiation-sensitive layer is removed. Then, etching or plating is made to the thus uncovered portion, whereby repair of the mask pattern is made.

公开(公告)号：DE68921341T2

公开(公告)日：1995-08-17

申请号：DE68921341

申请日：1989-10-30

Applicant: CANON KK

Inventor： UZAWA SHUNICHI ,  KARIYA TAKAO ,  HIGOMURA MAKOTO ,  MIZUSAWA NOBUTOSHI ,  EBINUMA RYUICHI ,  UDA KOJI ,  OZAWA KUNITAKA ,  AMEMIYA MITSUAKI ,  SAKAMOTO EIJI ,  ABE NAOTO ,  SAITOH KENJI

IPC: G03F7/20 ,  G03F9/00

公开(公告)号：DE68929187D1

公开(公告)日：2000-04-27

申请号：DE68929187

申请日：1989-08-31

Applicant: CANON KK

Inventor： KUROSAWA HIROSHI ,  AMEMIYA MITSUAKI ,  TERASHIMA SHIGERU ,  UDA KOJI ,  SHIMODA ISAMU ,  UZAWA SHUNICHI ,  OZAWA KUNITAKA ,  HARA SHINICHI ,  KAWAKAMI EIGO ,  MIZUSAWA NOBUTOSHI ,  MORI MAKIKO ,  EBINUMA RYUICHI

IPC: G03F7/20

Abstract: An exposure apparatus usable with synchrotron radiation source (201) wherein the synchrotron radiation (202,204) is generated by electron injection (210) into a ring (201). The exposure apparatus is to transfer a semiconductor element pattern of a mask (208) onto a semiconductor wafer (209) by the synchrotron radiation. The apparatus includes a shutter (207) for controlling the exposure of the wafer (209). The shutter (207) controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined (206,211,216) in response to the electron injection (210), and thereafter, the illuminance distribution is corrected (216,215,213,207) in a predetermined manner. By this, the illuminance distribution data for controlling (213,215) the shutter (207) always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer (209) are exposed with high precision.

公开(公告)号：DE69030848D1

公开(公告)日：1997-07-10

申请号：DE69030848

申请日：1990-07-31

Applicant: CANON KK

Inventor： AMEMIYA MITSUAKI ,  SAKAMOTO EIJI ,  UDA KOJI ,  OZAWA KUNITAKA ,  IWAMOTO KAZUNORI ,  UZAWA SHUNICHI ,  MARUMO MITSUJI

IPC: H01L21/30 ,  G03F7/20 ,  H01L21/00 ,  H01L21/027 ,  H01L21/687

公开(公告)号：GB2279736B

公开(公告)日：1996-12-18

申请号：GB9411823

申请日：1994-06-13

Applicant: CANON KK

Inventor： MIYAKE AKIRA ,  AMEMIYA MITSUAKI

IPC: G01B15/00 ,  G01B11/00 ,  G01T1/29 ,  H05H13/04

Abstract: A beam position detecting device wherein the intensity of a radiation beam from a synchrotron ring is measured on the basis of electric currents flowing through two wires, while accumulated electric current in the synchrotron ring is measured by using a current transformer. The beam position can be determined accurately on the basis of these measured values.