公开(公告)号：US20170190020A1

公开(公告)日：2017-07-06

申请号：US15304829

申请日：2015-04-10

Applicant: EBARA CORPORATION

Inventor： Yoichi KOBAYASHI ,  Keita YAGI ,  Masaki KINOSHITA ,  Yoichi SHIOKAWA

IPC: B24B49/05 ,  H01L21/67 ,  H01L21/66 ,  B24B49/03

CPC classification number: B24B49/05 ,  B24B37/013 ,  B24B37/105 ,  B24B37/32 ,  B24B37/34 ,  B24B49/02 ,  B24B49/03 ,  B24B49/04 ,  B24B49/12 ,  H01L21/67 ,  H01L22/12 ,  H01L22/26

Abstract: The present invention relates to a polishing method and a polishing apparatus for polishing a substrate such as a wafer while measuring a film thickness based on optical information included in reflected light from the substrate. The polishing method includes preparing a plurality of spectrum groups each containing a plurality of reference spectra corresponding to different film thicknesses; directing light to a substrate and receiving reflected light from the substrate; producing, from the reflected light, a sampling spectrum for selecting a spectrum group; selecting a spectrum group containing a reference spectrum which is closest in shape to the sampling spectrum; producing a measurement spectrum for obtaining a film thickness while polishing the substrate; selecting, from the selected spectrum group, a reference spectrum which is closest in shape to the measurement spectrum that has been produced when the substrate is being polished; and obtaining a film thickness corresponding to the selected reference spectrum.

公开(公告)号：US20240353344A1

公开(公告)日：2024-10-24

申请号：US18634702

申请日：2024-04-12

Applicant: EBARA CORPORATION

Inventor： Masaki KINOSHITA ,  Keita YAGI ,  Taro TAKAHASHI ,  Yoichi SHIOKAWA ,  Yuki WATANABE

IPC: G01N21/84 ,  G01N21/95 ,  H01L21/304 ,  H01L21/66

CPC classification number: G01N21/8422 ,  G01N21/9501 ,  H01L21/304 ,  H01L22/12

Abstract: Provided is a film thickness measurement device, including: a head that holds a substrate to be polished and is capable of moving the substrate, a stage made of transparent material; a liquid supply unit configured to supply liquid onto the stage; a liquid discharge unit configured to discharge the liquid on the stage to the outside; a measurement unit configured to be placed on a side opposite to the head across the stage and to optically measure a film thickness on a surface of the substrate that is placed across the stage; and a control unit configured to move at least one of the stage and the head toward the other, and to irradiate the substrate with light while the surface of the substrate is immersed in the liquid, thereby performing film thickness measurement.

公开(公告)号：US20240217060A1

公开(公告)日：2024-07-04

申请号：US18395191

申请日：2023-12-22

Applicant: EBARA CORPORATION

Inventor： Masashi KABASAWA ,  Keita YAGI ,  Yoichi SHIOKAWA ,  Toshimitsu SASAKI ,  Kohei EGAWA

IPC: B24B49/03 ,  B24B49/04

CPC classification number: B24B49/03 ,  B24B49/04

Abstract: A substrate polishing device includes a height detection unit configured to measure a surface height of a polishing member, and a cutting rate calculation unit configured to calculate a cutting rate of the polishing member based on the surface height. The cutting rate calculation unit corrects the current cutting rate based on the cutting rate calculated in the past when the calculated current cutting rate falls outside a search range.

公开(公告)号：US20230204342A1

公开(公告)日：2023-06-29

申请号：US18082342

申请日：2022-12-15

Applicant: EBARA CORPORATION

Inventor： Masaki KINOSHITA ,  Yoichi SHIOKAWA

IPC: G01B11/06 ,  H01L21/66

CPC classification number: G01B11/0616 ,  H01L22/26

Abstract: A film-thickness measuring method capable of substantially extending a wavelength range of a spectrum of reflected light from a workpiece, and accurately measuring a film thickness is disclosed. The film-thickness measuring method includes: pressing a workpiece against a polishing pad, while rotating a polishing table that supports the polishing pad, to polish the workpiece; during the polishing of the workpiece, directing light to the workpiece from a liquid-seal sensor and a transparent-window sensor disposed in the polishing table and receiving reflected light from the workpiece by the liquid-seal sensor and the transparent-window sensor; and determining a film thickness of the workpiece based on a spectrum of the reflected light from the workpiece.

公开(公告)号：US20140364040A1

公开(公告)日：2014-12-11

申请号：US14468675

申请日：2014-08-26

Applicant: EBARA CORPORATION

Inventor： Tadakazu SONE ,  Yasuyuki MOTOSHIMA ,  Toru MARUYAMA ,  Katsutoshi ONO ,  Yoichi SHIOKAWA

IPC: B24B37/015 ,  B24B37/04

CPC classification number: B24B37/015 ,  B24B37/042 ,  B24B37/10 ,  B24B37/34 ,  B24B55/02

Abstract: An apparatus for polishing a substrate includes a rotatable polishing table supporting a polishing pad, a substrate holder configured to hold the substrate and press the substrate against a polishing surface of the polishing pad on the rotating polishing table so as to polish the substrate, and a pad-temperature detector configured to measure a temperature of the polishing surface of the polishing pad. The apparatus also includes a pad-temperature regulator configured to contact the polishing surface to regulate the temperature of the polishing surface, and a temperature controller configured to control the temperature of the polishing surface by controlling the pad-temperature regulator based on information on the temperature of the polishing surface detected by the pad-temperature detector.

Abstract translation: 用于抛光基板的装置包括：支撑抛光垫的可旋转的抛光台;衬底保持器，其构造成保持基板，并将基板压靠在旋转的抛光台上的抛光垫的抛光表面上，以便抛光基板;以及 衬垫温度检测器，被配置为测量抛光垫的抛光表面的温度。 该装置还包括：衬垫温度调节器，其被配置为接触抛光表面以调节抛光表面的温度;以及温度控制器，其被配置为通过基于关于温度的信息控制焊盘温度调节器来控制抛光表面的温度 由焊盘温度检测器检测到的抛光表面。

公开(公告)号：US20140120808A1

公开(公告)日：2014-05-01

申请号：US14150068

申请日：2014-01-08

Applicant: EBARA CORPORATION

Inventor： Akira FUKUDA ,  Yoshihiro MOCHIZUKI ,  Yutaka WADA ,  Yoichi SHIOKAWA ,  Hirokuni HIYAMA

IPC: B24B53/017

CPC classification number: B24B53/017

Abstract: A method dresses a polishing member with a diamond dresser having diamond particles arranged on a surface thereof. The method includes determining dressing conditions by performing a simulation of a distribution of a sliding distance of the diamond dresser on a surface of the polishing member, and dressing the polishing member with the diamond dresser under the determined dressing conditions. The simulation includes calculating the sliding distance corrected in accordance with a depth of the diamond particles thrusting into the polishing member.

Abstract translation: 一种方法用抛光件与金刚石修整器连接，金刚石修整器具有布置在其表面上的金刚石颗粒。 该方法包括通过对抛光构件的表面上的金刚石修整器的滑动距离的分布的模拟进行模拟，以及在确定的修整条件下用金刚石修整器修整抛光构件来确定修整条件。 模拟包括计算根据推入抛光构件的金刚石颗粒的深度校正的滑动距离。

公开(公告)号：US20240391054A1

公开(公告)日：2024-11-28

申请号：US18651947

申请日：2024-05-01

Applicant: Ebara Corporation

Inventor： Osamu NABEYA ,  Yoichi SHIOKAWA

IPC: B24B47/16 ,  B24B37/34 ,  B24B49/04 ,  B24B57/02

Abstract: A polishing apparatus capable of accurately controlling a film thickness profile of a substrate by controlling each of a plurality of pressing actuators without having a complicated mechanism is disclosed. The polishing apparatus includes a polishing structure, a polishing head, and a head rotation mechanism configured to rotate the polishing head within a predetermined rotation angle range. The polishing head includes a plurality of pressing actuators. The polishing structure includes a polishing table or a polishing belt.

公开(公告)号：US20240217062A1

公开(公告)日：2024-07-04

申请号：US18395059

申请日：2023-12-22

Applicant: EBARA CORPORATION

Inventor： Masashi KABASAWA ,  Yoichi SHIOKAWA ,  Keita YAGI ,  Toshimitsu SASAKI ,  Kohei EGAWA

IPC: B24B53/017 ,  B24B37/04 ,  B24B49/00

CPC classification number: B24B53/017 ,  B24B37/042 ,  B24B49/006

Abstract: An object of the present disclosure is to more appropriately control the moving speed of a dresser. A substrate polishing apparatus includes a dresser that moves in a plurality of scan areas set on a polishing member, and a moving speed calculation unit that calculates a moving speed of the dresser in each of the scan areas based on an evaluation index including a deviation from a stay time of the dresser in each of the scan areas on a basis of a previous recipe.

公开(公告)号：US20230381919A1

公开(公告)日：2023-11-30

申请号：US18232278

申请日：2023-08-09

Applicant: EBARA CORPORATION

Inventor： Keita YAGI ,  Yoichi SHIOKAWA ,  Toshimitsu SASAKI ,  Yuki WATANABE ,  Nachiketa CHAUHAN

IPC: B24B49/12 ,  B24B37/013

CPC classification number: B24B49/12 ,  B24B37/013 ,  H01L21/304

Abstract: A substrate polishing method capable of reducing an influence of variation in spectrum of reflected light from a substrate, such as a wafer, and determining an accurate film thickness is disclosed. The method includes: polishing a surface of a substrate by pressing the substrate against a polishing pad on a rotating polishing table; producing a spectrum of reflected light from the surface of the substrate each time the polishing table makes one rotation; creating a three-dimensional data containing a plurality of spectra arranged along polishing time; and determining a film thickness of the substrate based on the three-dimensional data.

公开(公告)号：US20200176281A1

公开(公告)日：2020-06-04

申请号：US16780049

申请日：2020-02-03

Applicant: EBARA CORPORATION

Inventor： Koji MAEDA ,  Hiroshi SHIMOMOTO ,  Hisajiro NAKANO ,  Masayoshi IMAI ,  Yoichi SHIOKAWA

IPC: H01L21/67 ,  B24B37/04 ,  B24B37/34

Abstract: Various methods of cleaning a substrate are provided. In one aspect, method of cleaning a substrate, comprising: holding and rotating a substrate by a substrate holder; and supplying a chemical liquid to a chemical liquid nozzle and supplying two fluids to a two-fluid nozzle while moving the chemical-liquid nozzle and the two-fluid nozzle radially outwardly from the center to the periphery of the substrate, wherein the distance of the chemical-liquid nozzle from a rotating axis of the substrate holder is longer than the distance of the two-fluid nozzle from the rotating axis of the substrate holder while the chemical-liquid nozzle and the two-fluid nozzle are moved radially outwardly from the rotating axis of the substrate holder.