公开(公告)号：US09793454B2

公开(公告)日：2017-10-17

申请号：US14992785

申请日：2016-01-11

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Huang ,  Shiuan-Leh Lin ,  Chih-Chiang Lu ,  Chia-Liang Hsu

IPC: H01L33/58 ,  H01L33/46 ,  H01L33/02 ,  H01L33/32 ,  H01L33/00 ,  H01L33/10

CPC classification number: H01L33/12 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/10 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/46 ,  H01L33/58 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0091

Abstract: This disclosure discloses a method for making a light-emitting device, comprising steps of: providing a substrate; forming a light-emitting stack on the substrate; forming a first layer on the light-emitting stack; providing a permanent substrate; forming a second layer on the permanent substrate; bonding the first layer and the second layer to form a bonding layer to connect the substrate and the permanent substrate; wherein a refractive index of the bonding layer decreases from the light-emitting stack toward the permanent substrate.

公开(公告)号：US09385272B2

公开(公告)日：2016-07-05

申请号：US14852212

申请日：2015-09-11

Applicant: EPISTAR CORPORATION

Inventor： Shih-I Chen ,  Chia-Liang Hsu ,  Chien-Fu Huang ,  Tzu-Chieh Hsu

IPC: H01L33/00 ,  H01L33/10 ,  H01L33/38 ,  H01L33/42 ,  H01L33/40 ,  H01L33/22 ,  H01L33/44

CPC classification number: H01L33/10 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

Abstract: An optoelectronic device comprises an optoelectronic system for emitting a light and a semiconductor layer on the optoelectronic system, wherein the semiconductor layer comprises a metal element of Ag and an atomic concentration of Ag in the semiconductor layer is larger than 1*1016 cm−3.

Abstract translation: 光电子器件包括用于在光电子系统上发射光和半导体层的光电子系统，其中半导体层包括Ag的金属元素，并且半导体层中的Ag的原子浓度大于1×1016cm-3。

公开(公告)号：US09087967B2

公开(公告)日：2015-07-21

申请号：US13856220

申请日：2013-04-03

Applicant: EPISTAR CORPORATION

Inventor： Shih-I Chen ,  Tsung-Xian Lee ,  Yi-Ming Chen ,  Wei-Yu Chen ,  Ching-Pei Lin ,  Min-Hsun Hsieh ,  Cheng-Nan Han ,  Tien-Yang Wang ,  Hsing-Chao Chen ,  Hsin-Mao Liu ,  Zong-Xi Chen ,  Tzu-Chieh Hsu ,  Chien-Fu Huang ,  Yu-Ren Peng

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/44 ,  H01L25/075

CPC classification number: H01L33/502 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.

Abstract translation: 本申请的实施方式的发光装置包括：基板; 形成在所述基板上的第一半导体发光结构，其中所述第一半导体发光结构包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在所述第一半导体层之间的第一有源层 层和第二半导体层，其中第一有源层能够发射具有第一主波长的第一光; 以及形成在所述第一光的路径上的第一热敏层，其中所述第一热敏层包括随温度变化而变化的材料特性。

公开(公告)号：US08643054B2

公开(公告)日：2014-02-04

申请号：US14011502

申请日：2013-08-27

Applicant: Epistar Corporation

Inventor： Chien-Fu Huang ,  Min-Hsun Hsieh ,  Chih-Chiang Lu ,  Chia-Liang Hsu ,  Shih-I Chen

IPC: H01L33/60 ,  H01L33/62

CPC classification number: H01L33/24 ,  H01L24/05 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/387 ,  H01L33/62 ,  H01L2224/05552 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width.

Abstract translation: 发光装置包括半导体发光叠层; 形成在半导体发光叠层上的电流注入部分; 具有从所述电流注入部分辐射的第一分支的延伸部分和从所述第一分支延伸的第二分支; 所述第二分支和所述半导体发光叠层之间的电接触结构具有第一宽度; 以及位于电接触结构正下方并且具有大于第一宽度的第二宽度的电流阻挡结构。

公开(公告)号：US11901480B2

公开(公告)日：2024-02-13

申请号：US17397388

申请日：2021-08-09

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Huang ,  Chih-Chiang Lu ,  Chun-Yu Lin ,  Hsin-Chih Chiu

IPC: H01L33/02 ,  H01L33/62 ,  H01L25/075 ,  H01L21/66 ,  H01L23/00 ,  H01L33/36

CPC classification number: H01L33/02 ,  H01L22/12 ,  H01L22/14 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/62 ,  H01L33/36 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.

公开(公告)号：US10680133B2

公开(公告)日：2020-06-09

申请号：US16436544

申请日：2019-06-10

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Huang ,  Chih-Chiang Lu ,  Chun-Yu Lin ,  Hsin-Chih Chiu

IPC: H01L33/02 ,  H01L21/66 ,  H01L33/62 ,  H01L25/075 ,  H01L23/00 ,  H01L33/36

Abstract: The present disclosure provides a light-emitting device comprises a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first light-emitting layer separated from the topmost surface by a first distance; a second semiconductor stack arranged on the substrate, and comprising a second light-emitting layer separated from the topmost surface by a second distance; and a third semiconductor stack arranged on the substrate, and comprising third light-emitting layer separated from the topmost surface by a third distance; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights; and wherein the second distance is different form the first distance and the third distance.

公开(公告)号：US10236411B2

公开(公告)日：2019-03-19

申请号：US15335078

申请日：2016-10-26

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang Lu ,  Yi-Chieh Lin ,  Wen-Luh Liao ,  Shou-Lung Chen ,  Chien-Fu Huang

IPC: H01L33/00 ,  H01L33/10 ,  H01L33/08 ,  H01L27/15 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62

Abstract: A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap.

公开(公告)号：US10038128B2

公开(公告)日：2018-07-31

申请号：US15702286

申请日：2017-09-12

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Huang ,  Yao-Ning Chan ,  Tzu Chieh Hsu ,  Yi-ming Chen ,  Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chia-liang Hsu ,  Chun-Hsien Chang

IPC: H01L33/00 ,  H01L33/62 ,  H01L25/16 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/385 ,  H01L33/48 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.

公开(公告)号：US09793458B2

公开(公告)日：2017-10-17

申请号：US15438430

申请日：2017-02-21

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Huang ,  Yao-Ning Chan ,  Tzu Chieh Hsu ,  Yi Ming Chen ,  Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chia-Liang Hsu ,  Chun-Hsien Chang

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/38 ,  H01L25/16

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/385 ,  H01L33/48 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μm; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.

公开(公告)号：US09425363B2

公开(公告)日：2016-08-23

申请号：US14098707

申请日：2013-12-06

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Huang ,  Chiu-Lin Yao

IPC: H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L33/46 ,  H01L33/02 ,  H01L33/22 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/46 ,  H01L33/02 ,  H01L33/22 ,  H01L33/38 ,  H01L33/44 ,  H01L2933/0091

Abstract: A light-emitting device is disclosed and comprises: a semiconductor stack; a transparent substrate comprising a first material; a bonding layer which bonds the semiconductor stack and the transparent substrate; and a medium in the transparent substrate, the medium comprising a second material different from the first material.

Abstract translation: 公开了一种发光器件，包括：半导体叠层; 透明基板，包括第一材料; 键合所述半导体堆叠和所述透明基板的接合层; 以及在所述透明基板中的介质，所述介质包括与所述第一材料不同的第二材料。