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    Optoelectronic device and method for manufacturing the same
    11.
    发明授权
    Optoelectronic device and method for manufacturing the same 有权
    光电子器件及其制造方法

    公开(公告)号：US09276164B2

    公开(公告)日：2016-03-01

    申请号：US13684647

    申请日：2012-11-26

    Applicant: Epistar corporation

    Inventor： Tzu Chieh Hsu ,  Ching-Pei Lin ,  Yen Ming Hsu ,  Shou-Chin Wei

    IPC: H01L33/00 ,  H01L33/22 ,  H01L33/44

    CPC classification number: H01L33/0062 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/44 ,  H01L2933/0025 ,  H01L2933/0091

    Abstract: A method of fabricating an optoelectronic device, comprising: providing a first substrate; forming an epitaxial stack on the first substrate wherein the epitaxial stack comprising a first conductive-type semiconductor layer, an active layer and a second conductive-type semiconductor layer; etching an upper surface of the second conductive-type semiconductor layer and forming a first texture profile on the upper surface of the second conductive-type semiconductor layer; forming a passivation layer on the upper surface of the second conductive-type semiconductor layer; and etching an upper surface of the passivation layer forming a second texture profile on the upper surface of the passivation layer wherein the first texture profile is different from the second texture profile.

    Abstract translation: 一种制造光电器件的方法，包括：提供第一衬底; 在所述第一衬底上形成外延堆叠，其中所述外延堆叠包括第一导电型半导体层，有源层和第二导电型半导体层; 蚀刻第二导电型半导体层的上表面并在第二导电型半导体层的上表面上形成第一纹理轮廓; 在所述第二导电型半导体层的上表面上形成钝化层; 以及蚀刻所述钝化层的上表面，在所述钝化层的上表面上形成第二纹理轮廓，其中所述第一纹理轮廓与所述第二纹理轮廓不同。

    OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
    12.
    发明申请
    OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    光电装置及其制造方法

    公开(公告)号：US20140145224A1

    公开(公告)日：2014-05-29

    申请号：US13684647

    申请日：2012-11-26

    Applicant: EPISTAR CORPORATION

    Inventor： Tzu Chieh Hsu ,  Ching-Pei Lin ,  Yen Ming Hsu ,  Shou-Chin Wei

    IPC: H01L33/58 ,  H01L33/00

    CPC classification number: H01L33/0062 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/44 ,  H01L2933/0025 ,  H01L2933/0091

    Abstract: A method of fabricating an optoelectronic device, comprising: providing a first substrate; forming an epitaxial stack on the first substrate wherein the epitaxial stack comprising a first conductive-type semiconductor layer, an active layer and a second conductive-type semiconductor layer; etching an upper surface of the second conductive-type semiconductor layer and forming a first texture profile on the upper surface of the second conductive-type semiconductor layer; forming a passivation layer on the upper surface of the second conductive-type semiconductor layer; and etching an upper surface of the passivation layer forming a second texture profile on the upper surface of the passivation layer wherein the first texture profile is different from the second texture profile.

    Abstract translation: 一种制造光电器件的方法，包括：提供第一衬底; 在所述第一衬底上形成外延堆叠，其中所述外延堆叠包括第一导电型半导体层，有源层和第二导电型半导体层; 蚀刻第二导电型半导体层的上表面并在第二导电型半导体层的上表面上形成第一纹理轮廓; 在所述第二导电型半导体层的上表面上形成钝化层; 以及蚀刻所述钝化层的上表面，在所述钝化层的上表面上形成第二纹理轮廓，其中所述第一纹理轮廓与所述第二纹理轮廓不同。

    Light-emitting device
    16.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US09087967B2

    公开(公告)日：2015-07-21

    申请号：US13856220

    申请日：2013-04-03

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-I Chen ,  Tsung-Xian Lee ,  Yi-Ming Chen ,  Wei-Yu Chen ,  Ching-Pei Lin ,  Min-Hsun Hsieh ,  Cheng-Nan Han ,  Tien-Yang Wang ,  Hsing-Chao Chen ,  Hsin-Mao Liu ,  Zong-Xi Chen ,  Tzu-Chieh Hsu ,  Chien-Fu Huang ,  Yu-Ren Peng

    IPC: H01L33/00 ,  H01L33/50 ,  H01L33/44 ,  H01L25/075

    CPC classification number: H01L33/502 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.

    Abstract translation: 本申请的实施方式的发光装置包括：基板; 形成在所述基板上的第一半导体发光结构，其中所述第一半导体发光结构包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在所述第一半导体层之间的第一有源层 层和第二半导体层，其中第一有源层能够发射具有第一主波长的第一光; 以及形成在所述第一光的路径上的第一热敏层，其中所述第一热敏层包括随温度变化而变化的材料特性。

    Light-emitting device
    17.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08916884B2

    公开(公告)日：2014-12-23

    申请号：US13851997

    申请日：2013-03-28

    Applicant: Epistar Corporation

    Inventor： Shih-I Chen ,  Wei-Yu Chen ,  Yi-Ming Chen ,  Ching-Pei Lin ,  Tsung-Xian Lee

    IPC: H01L27/15 ,  H01L21/00 ,  H01L33/42 ,  H01L33/38

    CPC classification number: H01L33/42 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Disclosed is a light-emitting device comprising: a light-emitting stack with a length and a width comprising: a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer on the active layer; a conductive layer with a width greater than the width of the first conductivity type semiconductor layer and under the first conductivity type semiconductor layer, the conductive layer comprising a first overlapping portion which overlaps the first conductivity type semiconductor layer and a first extending portion which does not overlap the first conductivity type semiconductor layer; a transparent conductive layer with a width greater than the width of the second conductivity type semiconductor layer over the second conductivity type semiconductor layer, the transparent conductive layer comprising a second overlapping portion which overlaps the second conductivity type semiconductor layer and a second extending portion which does not overlap the second conductivity type semiconductor layer; a first electrode substantially joined with only the first extending portion or a part of the first extending part; and a second electrode substantially joined with only the second extending portion or a part of the second extending portion.

    Abstract translation: 公开了一种发光器件，包括：具有长度和宽度的发光叠层，包括：第一导电类型半导体层; 在第一导电类型半导体层上的有源层; 和有源层上的第二导电类型半导体层; 导电层，其宽度大于第一导电类型半导体层的宽度，并且在第一导电类型半导体层下方，导电层包括与第一导电类型半导体层重叠的第一重叠部分和不与第一导电类型半导体层重叠的第一延伸部分 重叠第一导电类型半导体层; 透明导电层，其宽度大于第二导电类型半导体层上的第二导电类型半导体层的宽度，透明导电层包括与第二导电类型半导体层重叠的第二重叠部分和与第二导电类型半导体层重叠的第二延伸部分 不与第二导电类型半导体层重叠; 第一电极，仅基本上与第一延伸部分或第一延伸部分的一部分连接; 以及仅与第二延伸部分或第二延伸部分的一部分基本上接合的第二电极。

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