公开(公告)号：US10090440B1

公开(公告)日：2018-10-02

申请号：US15588166

申请日：2017-05-05

Applicant: EPISTAR CORPORATION

Inventor： Victor Liu ,  De-Shan Kuo ,  Hsin-Ying Wang ,  Chun-Hsiang Tu ,  Yu-Ting Huang

IPC: H01L29/207 ,  H01L33/38 ,  H01L33/14 ,  H01L33/20

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; a semiconductor stack on the substrate comprising a first region and a second region; a first trench extending from the semiconductor stack to the substrate to expose a surface of the substrate and separating the first region from the second region; and a first electrode comprising a first pad on the first region and a first extending electrode connecting to the first pad, wherein the first extending electrode is across the first trench.

公开(公告)号：US10069037B2

公开(公告)日：2018-09-04

申请号：US15299754

申请日：2016-10-21

Applicant: EPISTAR CORPORATION

Inventor： Yen-Tai Chao ,  Sen-Jung Hsu ,  Tao-Chi Chang ,  Wei-Chih Wen ,  Ou Chen ,  Yu-Shou Wang ,  Chun-Hsiang Tu ,  Jing-Feng Huang

IPC: H01L27/15 ,  H01L29/06 ,  H01L29/04 ,  H01L33/00 ,  H01L33/12 ,  H01L33/20 ,  H01L33/22 ,  H01L33/10 ,  H01L33/16

Abstract: A light-emitting device comprises a substrate having an top surface; a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the top surface and exposes an exposing portion of the top surface; a second semiconductor stack comprising a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the exposing portion of the top surface form an acute angle α between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β between thereof.

公开(公告)号：US09530948B2

公开(公告)日：2016-12-27

申请号：US15049917

申请日：2016-02-22

Applicant: EPISTAR CORPORATION

Inventor： De-Shan Kuo ,  Ting-Chia Ko ,  Chun-Hsiang Tu ,  Po-Shun Chiu

IPC: H01L29/18 ,  H01L33/60 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L27/15

CPC classification number: H01L33/62 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42 ,  H01L33/60

Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

Abstract translation: 1.一种发光装置，包括：基板; 半导体堆叠层，包括在所述衬底上的第一类型半导体层，所述第一半导体层上的有源层和所述有源层上的第二半导体层; 以及在所述第二半导体层上的电极结构，其中所述电极结构包括在所述接合层和所述导电层之间的接合层，导电层和第一阻挡层; 其中导电层具有比接合层更高的标准氧化电位。

公开(公告)号：US08928022B2

公开(公告)日：2015-01-06

申请号：US13934049

申请日：2013-07-02

Applicant: Epistar Corporation

Inventor： De-Shan Kuo ,  Chun-Hsiang Tu ,  Po-Shun Chiu ,  Chun-Teng Ko ,  Min-Hsun Hsieh

IPC: H01L29/06 ,  H01L33/22 ,  H01L33/42 ,  H01L33/10 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/22 ,  H01L33/10 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42

Abstract: A light-emitting device comprising: a light-emitting stacked layer having a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer; a transparent conductive oxide layer formed on the second conductivity type semiconductor layer wherein the transparent conductive oxide layer having a first portion and a second portion and the upper surface of the transparent conductive oxide layer is a textured surface; a first electrode formed on the second portion of the transparent conductive oxide layer, and a second electrode formed on the first conductivity type semiconductor layer; a planarization layer formed on the first portion of the transparent conductive oxide layer, and the second electrode; and a reflective layer formed on the planarization layer that is devoid of the first electrode and the second electrode.

Abstract translation: 一种发光器件，包括：具有第一导电类型半导体层的发光层叠层; 形成在所述第一导电型半导体层上的发光层; 以及形成在所述发光层上的第二导电型半导体层; 形成在第二导电型半导体层上的透明导电氧化物层，其中具有第一部分和第二部分的透明导电氧化物层和透明导电氧化物层的上表面是纹理表面; 形成在透明导电氧化物层的第二部分上的第一电极和形成在第一导电类型半导体层上的第二电极; 形成在透明导电氧化物层的第一部分上的平坦化层和第二电极; 以及形成在没有第一电极和第二电极的平坦化层上的反射层。

公开(公告)号：US11437547B2

公开(公告)日：2022-09-06

申请号：US17102171

申请日：2020-11-23

Applicant: EPISTAR CORPORATION

Inventor： De-Shan Kuo ,  Ting-Chia Ko ,  Chun-Hsiang Tu ,  Po-Shun Chiu

IPC: H01L29/06 ,  H01L33/42 ,  H01L33/40 ,  H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/60 ,  H01L33/62 ,  H01L33/22 ,  H01L33/00

Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

公开(公告)号：US10411177B2

公开(公告)日：2019-09-10

申请号：US16019136

申请日：2018-06-26

Applicant: EPISTAR CORPORATION

Inventor： De-Shan Kuo ,  Ting-Chia Ko ,  Chun-Hsiang Tu ,  Po-Shun Chiu

IPC: H01L33/62 ,  H01L33/08 ,  H01L33/60 ,  H01L27/15 ,  H01L33/30 ,  H01L33/32 ,  H01L33/06 ,  H01L33/42

Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

公开(公告)号：US09893257B2

公开(公告)日：2018-02-13

申请号：US15357334

申请日：2016-11-21

Applicant: EPISTAR CORPORATION

Inventor： De-Shan Kuo ,  Ting-Chia Ko ,  Chun-Hsiang Tu ,  Po-Shun Chiu

IPC: H01L29/10 ,  H01L33/62 ,  H01L33/08 ,  H01L33/60 ,  H01L33/30 ,  H01L33/32 ,  H01L33/06 ,  H01L33/42 ,  H01L27/15

CPC classification number: H01L33/62 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42 ,  H01L33/60

Abstract: A light-emitting device comprises a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises an adhesion layer on the second semiconductor layer, a conductive layer on the adhesion layer, and a bonding layer on the conductive layer, and wherein the electrode structure comprises a center region and an edge region, a thickness of each layer of the edge region of the electrode structure is smaller than that of the center region.

公开(公告)号：US20140124819A1

公开(公告)日：2014-05-08

申请号：US13861449

申请日：2013-04-12

Applicant: EPISTAR CORPORATION

Inventor： Ting-Chia Ko ,  De-Shan Kuo ,  Chun-Hsiang Tu ,  Po-Shun Chiu ,  Chien-Kai Chung ,  Hui-Chun Yeh ,  Min-Yen Tsai ,  Tsun-Kai Ko

IPC: H01L33/42

CPC classification number: H01L33/42 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/40 ,  H01L33/405

Abstract: A light-emitting device comprises a first semiconductor layer; and a transparent conductive oxide layer comprising a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region.

Abstract translation: 发光器件包括第一半导体层; 以及透明导电氧化物层，其包括具有第一金属材料的扩散区域和不具有第一金属材料的非扩散区域，其中所述非扩散区域比所述扩散区域更靠近所述第一半导体层。

公开(公告)号：US20130240923A1

公开(公告)日：2013-09-19

申请号：US13836681

申请日：2013-03-15

Applicant: EPISTAR CORPORATION

Inventor： CHIA-LIANG HSU ,  Chen Ou ,  Chun-Hsiang Tu ,  De-Shan Kuo ,  Ting-Chia Ko ,  Po-Shun Chiu

IPC: H01L33/46 ,  H01L33/00

CPC classification number: H01L33/46 ,  H01L33/002 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting diode structure comprising: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with different polarity from the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrical pad on the substrate, wherein the first electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the first semiconductor layer; and a second electrical pad on the substrate, wherein the second electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the second semiconductor layer, wherein the first electrical pad and the second electrical pad are not higher than the light-emitting semiconductor stack.

Abstract translation: 一种发光二极管结构，包括：基板; 在所述基板上的发光半导体堆叠，其中，所述发光半导体堆叠包括第一半导体层，与所述第一半导体层具有不同极性的第二半导体层，以及所述第一半导体层与所述第二半导体层之间的发光层 半导体层; 在所述基板上的第一电焊盘，其中所述第一电焊盘与所述发光半导体堆叠分离并且电连接到所述第一半导体层; 以及在所述基板上的第二电焊盘，其中所述第二电焊盘离开所述发光半导体堆叠并且电连接到所述第二半导体层，其中所述第一电焊盘和所述第二电焊盘不高于所述发光 半导体堆叠

公开(公告)号：US12068433B2

公开(公告)日：2024-08-20

申请号：US17496132

申请日：2021-10-07

Applicant: EPISTAR CORPORATION

Inventor： Yen-Tai Chao ,  Sen-Jung Hsu ,  Tao-Chi Chang ,  Wei-Chih Wen ,  Ou Chen ,  Yu-Shou Wang ,  Chun-Hsiang Tu ,  Jing-Feng Huang

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/20 ,  H01L33/10 ,  H01L33/16 ,  H01L33/22

CPC classification number: H01L33/12 ,  H01L33/005 ,  H01L33/007 ,  H01L33/20 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/16 ,  H01L33/22 ,  H01L2933/0091

Abstract: A light-emitting device includes: a substrate having a top surface, wherein the top surface comprises a first portion and a second portion; a first semiconductor stack on the first portion, comprising a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, comprising a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack comprises a dislocation stop layer; wherein the dislocation stop layer comprises AlGaN; and wherein the first side wall and the second portion of the top surface form an acute angle α between thereof.