公开(公告)号：US20140203322A1

公开(公告)日：2014-07-24

申请号：US13970732

申请日：2013-08-20

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu Chang ,  Meng-Chyi Wu ,  Chong-Long Ho ,  Ai-Sen Liu

IPC: H01L33/62

CPC classification number: H01L33/44 ,  H01L31/022483 ,  H01L31/02963 ,  H01L31/1844 ,  H01L31/1884 ,  H01L33/06 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0025 ,  Y02E10/544 ,  Y02P70/521

Abstract: An optical electrical device comprises a base and a transparent conductive structure on the base is disclosed. The base further comprises a light-emitting device and the transparent conductive structure comprises a transparent conductive oxide layer and a passivation layer on the transparent conductive oxide layer. The material of the transparent conductive oxide layer comprises transparent conductive metal oxide, such as ZnO. Furthermore, the transparent conductive metal oxide also comprises impurities, such as a carrier e.g. gallium.

Abstract translation: 公开了一种光电装置，其包括底座和底座上的透明导电结构。 基底还包括发光器件，并且透明导电结构在透明导电氧化物层上包括透明导电氧化物层和钝化层。 透明导电氧化物层的材料包括诸如ZnO的透明导电金属氧化物。 此外，透明导电金属氧化物还包括杂质，例如载体例如 镓。

公开(公告)号：US11158757B2

公开(公告)日：2021-10-26

申请号：US16697340

申请日：2019-11-27

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh Lin ,  Shiuan-Leh Lin ,  Yung-Fu Chang ,  Shih-Chang Lee ,  Chia-Liang Hsu ,  Yi Hsiao ,  Wen-Luh Liao ,  Hong-Chi Shih ,  Mei-Chun Liu

IPC: H01L31/0304 ,  H01L31/167 ,  H01L31/0232 ,  H01L31/02 ,  H01L25/16 ,  A61B5/024 ,  A61B5/021 ,  A61B5/1455 ,  A61B5/145 ,  G01J3/10

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ≥13.

公开(公告)号：US10741721B2

公开(公告)日：2020-08-11

申请号：US16374282

申请日：2019-04-03

Applicant: EPISTAR CORPORATION

Inventor： Cheng-Feng Yu ,  Ching-Yuan Tsai ,  Yao-Ru Chang ,  Hsin-Chan Chung ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Cheng-Hsing Chiang ,  Kuo-Feng Huang ,  Hsu-Hsuan Teng ,  Hung-Ta Cheng ,  Yung-Fu Chang

IPC: H01L33/06 ,  H01L33/60 ,  H01L33/64 ,  H01L33/00 ,  H01L33/30 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

公开(公告)号：US10205059B2

公开(公告)日：2019-02-12

申请号：US15709810

申请日：2017-09-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu Lin ,  Yung-Fu Chang ,  Rong-Ren Lee ,  Kuo-Feng Huang ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Ming-Siang Huang ,  Ming-Tzung Liou

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/42 ,  H01L33/40 ,  H01L33/22 ,  H01L33/06

Abstract: The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating from each other and formed of semiconductor material.