公开(公告)号：US20190148599A1

公开(公告)日：2019-05-16

申请号：US16227253

申请日：2018-12-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu LIN ,  Yung-Fu CHANG ,  Rong-Ren LEE ,  Kuo-Feng HUANG ,  Cheng-Long YEH ,  Yi-Ching LEE ,  Ming-Siang HUANG ,  Ming-Tzung LIOU

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/42 ,  H01L33/06 ,  H01L33/44

Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.

公开(公告)号：US20180069157A1

公开(公告)日：2018-03-08

申请号：US15796241

申请日：2017-10-27

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang LU ,  Yi-Chieh LIN ,  Rong-Ren LEE ,  Yu-Ren PENG ,  Ming-Siang HUANG ,  Ming-Ta CHIN ,  Yi-Ching LEE

IPC: H01L33/46 ,  H01L25/075 ,  H01L33/60

CPC classification number: H01L33/46 ,  H01L25/0753 ,  H01L33/04 ,  H01L33/10 ,  H01L33/60

Abstract: A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength λ nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8λ) volt and (1240/0.5λ) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.

公开(公告)号：US20130075696A1

公开(公告)日：2013-03-28

申请号：US13683476

申请日：2012-11-21

Applicant: Epistar Corporation

Inventor： Min-Hsun HSIEH ,  Yi-Chieh LIN ,  Rong-Ren LEE

IPC: H01L33/06

CPC classification number: H01L33/06 ,  H01L33/08

Abstract: A light-emitting device includes a first light-emitting element emitting a first light with a first dominant wavelength including a first MQW structure including a first number of MQW pairs; a second MQW structure on the first MQW structure, including a second number of MQW pairs; and a tunneling layer between the first MQW structure and the second MQW structure; and a second light-emitting element emitting a third light with a third dominant wavelength, wherein the first number is different from the second number.

Abstract translation: 发光装置包括发射具有第一主波长的第一光的第一发光元件，其包括包括第一数量的MQW对的第一MQW结构; 在第一MQW结构上的第二MQW结构，包括第二数量的MQW对; 以及在所述第一MQW结构和所述第二MQW结构之间的隧道层; 以及发射具有第三主波长的第三光的第二发光元件，其中所述第一数量与所述第二数量不同。

公开(公告)号：US20190393380A1

公开(公告)日：2019-12-26

申请号：US16452126

申请日：2019-06-25

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang CHEN ,  Rong-Ren LEE

IPC: H01L33/18 ,  H01L21/02 ,  H01L33/00 ,  H01L33/30 ,  H01L29/04 ,  H01L29/205 ,  H01L29/778

Abstract: A semiconductor substrate is provided in the present disclosure. The semiconductor substrate includes a first semiconductor layer and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer has a first lattice constant (L1) and the second semiconductor layer has a second lattice constant (L2). A ratio of a difference (L2-L1) between the second lattice constant (L2) and the first lattice constant (L1) to the first lattice constant (L1) is greater than 0.036.

公开(公告)号：US20180033918A1

公开(公告)日：2018-02-01

申请号：US15709810

申请日：2017-09-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu LIN ,  Yung-Fu CHANG ,  Rong-Ren LEE ,  Kuo-Feng HUANG ,  Cheng-Long YEH ,  Yi-Ching LEE ,  Ming-Siang HUANG ,  Ming-Tzung LIOU

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating to each other and formed of semiconductor material.

公开(公告)号：US20160336478A1

公开(公告)日：2016-11-17

申请号：US15219788

申请日：2016-07-26

Applicant: EPISTAR CORPORATION

Inventor： Rong-Ren LEE ,  Yung-Szu SU ,  Shih-Chang LEE

IPC: H01L31/18 ,  H01L31/0725

CPC classification number: H01L31/18 ,  H01L31/0725 ,  Y02E10/50

Abstract: This application is related to a method of manufacturing a solar cell device comprising providing a substrate comprising Ge or GaAs; forming a first tunnel junction on the substrate, wherein the first tunnel junction comprises a first n-type layer comprising InGaP:Te, and a first alloy layer comprising AlxGa(1−x)As and having a lattice constant; adding a material into the first alloy layer to change the lattice constant; and forming a first p-n junction on the first tunnel junction.

Abstract translation: 本申请涉及制造太阳能电池器件的方法，该方法包括提供包括Ge或GaAs的衬底; 在所述衬底上形成第一隧道结，其中所述第一隧道结包括包含InGaP：Te的第一n型层和包含Al x Ga（1-x）As并具有晶格常数的第一合金层; 向第一合金层中加入材料以改变晶格常数; 以及在所述第一隧道结上形成第一p-n结。

公开(公告)号：US20160190205A1

公开(公告)日：2016-06-30

申请号：US15059936

申请日：2016-03-03

Applicant: EPISTAR CORPORATION

Inventor： Rong-Ren LEE ,  Cheng-Hong CHEN ,  Chih-Peng NI ,  Chun-Yu LIN

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/38 ,  H01L49/02 ,  H01L33/10

CPC classification number: H01L27/15 ,  H01L28/20 ,  H01L33/025 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor structure comprising a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; and an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; wherein the second part functions as a low-resistance resistor and loses its make diode behavior, the active layer in the first part is capable of generating light, and the active layer in the second part is incapable of generating light.

Abstract translation: 提供了一种发光装置。 发光装置包括：半导体结构，包括第一类型半导体层，第二类型半导体层和在第一类型半导体层和第二类型半导体层之间的有源层; 以及通过所述第二类型半导体和所述有源层的隔离区，以将所述半导体结构分离成所述第一基板上的第一部分和第二部分; 其中第二部分用作低电阻电阻并失去其二极管行为，第一部分中的有源层能够产生光，并且第二部分中的有源层不能产生光。

公开(公告)号：US20150060877A1

公开(公告)日：2015-03-05

申请号：US14475210

申请日：2014-09-02

Applicant: EPISTAR CORPORATION

Inventor： Tsung-Hsien LIU ,  Rong-Ren LEE ,  Shih-Chang LEE

IPC: H01L33/08 ,  H01L33/06 ,  H01L33/30

CPC classification number: H01L33/08 ,  H01L33/025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/305

Abstract: An optoelectronic semiconductor device comprises a barrier layer, a first semiconductor layer on the barrier layer, the first semiconductor layer comprising a first dopant and a second dopant, and a second semiconductor layer beneath the barrier layer, the second semiconductor comprising the second dopant, wherein, in the first semiconductor layer, a concentration of the first dopant is larger than a concentration of the second dopant, and the concentration of the second dopant in the second semiconductor layer is larger than that in the first semiconductor layer.

Abstract translation: 光电子半导体器件包括阻挡层，阻挡层上的第一半导体层，包含第一掺杂剂和第二掺杂剂的第一半导体层，以及阻挡层下面的第二半导体层，第二半导体包括第二掺杂剂，其中 在第一半导体层中，第一掺杂剂的浓度大于第二掺杂剂的浓度，第二半导体层中的第二掺杂剂的浓度大于第一半导体层中的浓度。

公开(公告)号：US20140193932A1

公开(公告)日：2014-07-10

申请号：US14204764

申请日：2014-03-11

Applicant: Epistar Corporation

Inventor： Rong-Ren LEE ,  Cheng-Hong CHEN ,  Chih-Peng NI ,  Chun-Yu LIN

IPC: H01L33/60

CPC classification number: H01L27/15 ,  H01L28/20 ,  H01L33/025 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing a light-emitting device comprises the steps of: providing a first substrate; forming a semiconductor structure on the first substrate, wherein the semiconductor structure comprises a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; forming an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; and injecting an electrical current with a current density to the second part to make the second part to be permanently broken-down; wherein after the second part is permanently broken-down, the first part is capable of generating electromagnetic radiation and the second part is incapable of generating electromagnetic radiation.

Abstract translation: 一种制造发光器件的方法包括以下步骤：提供第一衬底; 在所述第一衬底上形成半导体结构，其中所述半导体结构包括第一类型半导体层，第二类型半导体层和在所述第一类型半导体层和所述第二类型半导体层之间的有源层; 通过所述第二类型半导体和所述有源层形成隔离区，以将所述半导体结构分离成所述第一基板上的第一部分和第二部分; 以及向所述第二部分注入具有电流密度的电流，以使所述第二部分永久分解; 其中在所述第二部分被永久分解之后，所述第一部分能够产生电磁辐射，并且所述第二部分不能产生电磁辐射。