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    12.
    发明专利
    未知

    公开(公告)号：FR2317758A1

    公开(公告)日：1977-02-04

    申请号：FR7618339

    申请日：1976-06-09

    Applicant: IBM

    Inventor： BERKENBLIT MELVIN ,  LUSSOW ROBERT O ,  PARK KYU C ,  REISMAN ARNOLD

    IPC: H01J9/385 ,  H01J9/26 ,  H01J9/395 ,  H01J9/40 ,  H01J17/16 ,  H01J9/00 ,  H01J17/48 ,  G09X

    Abstract: An in situ process is disclosed for fabricating gas discharge display panels in a sequential seal, bake-out and backfill mode of operation. The single thermal cycle process involves placing unassembled panel parts in a controlled gas ambient furnace system with required seal frame, evacuating said furnace and backfilling with an appropriate ambient atmosphere to an appropriate pressure while heating the furnace. During the heating, the furnace is repeatedly evacuated to moderate vacuum and refilled to some predetermined pressure. The furnace is heated to just above the glass transition temperature of the seal frame in this evacuate-refill mode, then held for some time to achieve outgassing of both panel parts and furnace chamber. Thereafter, the furnace chamber is refilled to one atmosphere and further heated to complete the sealing of the panel. The panel is then cooled to approximately 300 DEG C, still under one atmosphere, after which the evacuate-refill cycle is continuously repeated as the temperature is lowered down to the temperature of tip-off using the refill gas for the pressurization. The panel is refilled to an appropriate pressure at elevated temperature such that at room temperature the pressure is the desired pressure and the panel is tipped off. The process of successive evacuations and backfillings at the appropriate portions of the cycle are highly desirable for cleaning of the panel parts via contaminant dilution.

    13.
    发明专利
    未知

    公开(公告)号：DE2151073A1

    公开(公告)日：1972-04-20

    申请号：DE2151073

    申请日：1971-10-13

    Applicant: IBM

    Inventor： BERKENBLIT MELVIN ,  REISMAN ARNOLD

    IPC: C30B29/00 ,  H01L21/00 ,  H01L27/00 ,  B01J17/00

    Abstract: A polishing method for single crystal dielectrics such as sapphire and magnesium spinel is disclosed. A single crystal wafer of sapphire or magnesium spinel is immersed in a mixture of sulphuric and phosphoric acid in a range of mixtures of 9 parts sulphuric acid to 1 part phosphoric acid to 1 part sulphuric acid to 9 parts phosphoric acid by volume while the mixture is held at a temperature in the range of 200 DEG -325 DEG C. The rate of polishing as well as the quality of polishing of the wafers of sapphire or magnesium spinel is orientation sensitive and polishing is achieved for magnesium spinel having the orientations (100) and (110). Polishing is achieved for sapphire having the orientations (0001), (1123), (1100), (1124), (1120) and (0112). A wafer to be polished is suspended in the heated solution and may be rotated slowly. Nonpreferential material removal rates of fractions of a micron per minute are obtained. Crystals of both sapphire and spinel having the above-mentioned orientations may be polished in a preferred temperature range of 250 DEG -300 DEG C. The preferred polishing mixture for sapphire is 1 part sulphuric acid to 1 part phosphoric acid by volume at a temperature of 285 DEG C. For magnesium spinel, the preferred mixture is 3 parts sulphuric acid to 1 part phosphoric acid at a temperature of 250 DEG C. The polishing technique of the present invention provides planar, polished surfaces which are free of insoluble residues on the polished surface.

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