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    13.
    发明专利
    未知

    公开(公告)号：DE2364241A1

    公开(公告)日：1974-07-11

    申请号：DE2364241

    申请日：1973-12-22

    Applicant: IBM

    Inventor： CHAUDHARI PRAVEEN ,  CUOMO JEROME JOHN ,  MATTHEWS JOHN WAUCHOPE

    IPC: C30B13/06 ,  C30B1/02 ,  C30B1/08 ,  C30B29/06 ,  H01L21/20 ,  H01L21/205 ,  H01L21/208 ,  B01J17/12

    Abstract: 1393337 Mono-crystalline films INTERNATIONAL BUSINESS MACHINES CORP 15 Nov 1973 [29 Dec 1972] 52952/73 Heading B1S Single crystal films are grown on a substrate by depositing an amorphous film of a crystallizable material on the substrate at a temperature below the crystallization temperature of the material forming the film and heating the film to propagate from a seed crystal a mono-crystalline phase throughout the material of the film. Two or more films of monocrystalline materials may be formed on the substrate. The film may in certain cases be stripped from the substrate. The seed crystal may be a substrate which promotes epitaxial deposition or a portion of such a substrate, or the seed crystal may be formed in situ from a portion of the amorphous film and propogated throughout the remainder of the film by passing a hot zone across the film from the seed crystal. The film may be applied as a pattern to the substrate which may be inert and the seed formed at a peripheral part of the pattern e.g. where it comes to a point The substrate may be a single crystal of Gd 3 Ga 5 O 12 or Sm 3 Ga 5 O 12 with an amorphous portion of SiO 2 , a quartz substrate or a plastic support from which the monocrystalline film can be stripped. The material applied to the substrate may be an amorphous layer of Y 3 Ga 1À1 Fe 3À9 O 12 by sputtering, Y 3 Fe 5 O 12 , Y 3 (GaFe) 5 O 12 , (GdY) 3 (GaFe) 5 O 12 , or amorphous SiO 2 containing boron or phosphorus as a dopant. The heating may be effected by an electron beam. As shown in the Figure a single crystal film is formed on a completely inert substrate 18, by depositing an amorphous film 20 on the substrate in such a pattern that a peripheral portion is pointed and by heating this point a seed crystal 22, is formed which is propagated across and throughout the film by passing a hot zone across the pattern from the seed crystal.

    20.
    发明专利
    未知

    公开(公告)号：DE2862036D1

    公开(公告)日：1982-11-04

    申请号：DE2862036

    申请日：1978-12-09

    Applicant: IBM

    Inventor： CUOMO JEROME JOHN ,  GANGULEE AMITAVA ,  KOBLISKA ROBERT JOHN

    IPC: C22C1/00 ,  C22C45/04 ,  C23C14/00 ,  C23C14/14 ,  C23C30/00 ,  H01C7/00 ,  H01F10/12 ,  H01F10/13 ,  H01F10/14 ,  H01F41/18 ,  C23C15/00

    Abstract: These amorphous metal-alloy films include nitrogen, greater than about one atomic percent at least one transition metal selected from Cr, Fe, Co and Ni with at least one element forming an amorphous alloy therewith, selected from the "glass forming" elements, i.e., B, Si, Al, C and P. The alloys can be formed by deposition in a vacuum chamber. When films are sputtered, the target is composed of the above alloy elements with at least one element selected from each of the transition metal and glass forming element groups. Sputtering occurs in an atmosphere above about 2% vol. N2 gas mixed with an inert gas, e.g., Ar. Alloys produced include N, i.e., (Co-Fe-B)N and (Fe-B)N. Above about 2 atomic % N in the film, films have lower values of saturation magnetization 4 pi Ms. Above a 2% vol. N2 gas in the plasma, electrical resistivity increases. Over 0.5% vol. N2 gas in the plasma, the film's effective perpendicular anisotropy field Hk* increases. For (Co-Fe-B)N, the anisotropy direction moves from in plane to perpendicular above 2% vol. N2 plasmas. For (Fe-B)N, Hk* increases with N2 up to 10% vol. N2 plasma. The N% in a film varies linearly with the log of N2% vol. Films show markedly improved adhesion, corrosion resistance and hardness. Magnetic thermal stability increases with N2 above about 5% vol. N2 in a plasma. Structural and magnetic properties are stable for annealing up to 400 DEG C.

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