公开(公告)号：SG70044A1

公开(公告)日：2000-01-25

申请号：SG1997004071

申请日：1993-02-01

Applicant: IBM

Inventor： JOSHI RAJIV V ,  CUOMO JEROME J ,  DALAL HORMAZDYAR M ,  HSU LOUIS L

IPC: H01L21/28 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  H01L23/485 ,  H01L21/60 ,  H01L29/43 ,  H01L29/440 ,  H01L29/460 ,  H01L21/44 ,  H01L21/48 ,  H01L29/40

Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH 4 to WF 6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metallizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

公开(公告)号：SG70043A1

公开(公告)日：2000-01-25

申请号：SG1997004069

申请日：1993-02-01

Applicant: IBM

Inventor： JOSHI RAJIV V ,  CUOMO JEROME J ,  HSU LOUIS L ,  DALAL HORMAZDYAR M

IPC: H01L21/28 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  H01L23/485 ,  H01L21/60 ,  H01L29/43 ,  H01L29/440 ,  H01L29/460 ,  H01L21/44 ,  H01L21/48 ,  H01L29/40

Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH 4 to WF 6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metallizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

公开(公告)号：DE69836114T2

公开(公告)日：2007-04-19

申请号：DE69836114

申请日：1998-05-08

Applicant: IBM

Inventor： ASHLEY LEON ,  DALAL HORMAZDYAR M ,  NGUYEN DU BINH ,  RATHORE HAZARA S ,  SMITH RICHARD G ,  SWINTON ALEXANDER J ,  WACHNIK RICHARD A

IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is deposited by chemical vapor deposition, or by physical vapor deposition in a layer less than about 800 angstroms.

公开(公告)号：SG70046A1

公开(公告)日：2000-01-25

申请号：SG1997004075

申请日：1993-02-01

Applicant: IBM

Inventor： JOSHI RAJIV V ,  CUOMO JEROME J ,  DALAL HORMAZDYAR M ,  HSU LOUIS L

IPC: H01L21/28 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  H01L23/485 ,  H01L21/60 ,  H01L29/43 ,  H01L29/440 ,  H01L29/460 ,  H01L21/44 ,  H01L21/48 ,  H01L29/40

Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH 4 to WF 6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metallizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

公开(公告)号：CA1120611A

公开(公告)日：1982-03-23

申请号：CA337633

申请日：1979-10-15

Applicant: IBM

Inventor： DALAL HORMAZDYAR M ,  PATNAIK BISWESWAR ,  SARKARY HOMI G

IPC: H01L21/3213 ,  H01L21/768 ,  H01L23/522 ,  H05K3/46 ,  H05K1/11

Abstract: A method for forming feedthrough connections, or via studs, between levels of metallization which are typically formed atop semiconductor substrates. A conductive pattern is formed which includes the first level metallurgy, an etch barrier and the feedthrough metallurgy in the desired first level metallurgical configuration. She via stud metallurgy alone is then patterned, preferably by reactive ion etching, using the etch barrier to prevent etching of the first level metallurgy. An insulator is then deposited around the via studs to form a planar layer of studs and insulator, after which a second level of metallization may be deposited.

公开(公告)号：DE69836114D1

公开(公告)日：2006-11-23

申请号：DE69836114

申请日：1998-05-08

Applicant: IBM

Inventor： ASHLEY LEON ,  DALAL HORMAZDYAR M ,  NGUYEN DU BINH ,  RATHORE HAZARA S ,  SMITH RICHARD G ,  SWINTON ALEXANDER J ,  WACHNIK RICHARD A

IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is deposited by chemical vapor deposition, or by physical vapor deposition in a layer less than about 800 angstroms.

公开(公告)号：DE69333604T2

公开(公告)日：2005-09-15

申请号：DE69333604

申请日：1993-02-01

Applicant: IBM

Inventor： JOSHI RAJIV V ,  CUOMO JEROME J ,  DALAL HORMAZDYAR M ,  HSU LOUIS L

IPC: H01L21/28 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  H01L23/485 ,  H01L21/60

Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH 4 to WF 6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metallizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

公开(公告)号：DE69329663D1

公开(公告)日：2000-12-21

申请号：DE69329663

申请日：1993-02-01

Applicant: IBM

Inventor： JOSHI RAJIV V ,  CUOMO JEROME J ,  DALAL HORMAZDYAR M ,  HSU LOUIS L

IPC: H01L21/28 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  H01L23/485 ,  H01L21/60

Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH 4 to WF 6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metallizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

公开(公告)号：SG70045A1

公开(公告)日：2000-01-25

申请号：SG1997004072

申请日：1993-02-01

Applicant: IBM

Inventor： JOSHI RAJIV V ,  CUOMO JEROME J ,  DALAL HORMAZDYAR M ,  HSU LOUIS L

IPC: H01L21/28 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  H01L23/485 ,  H01L21/60 ,  H01L29/43 ,  H01L29/440 ,  H01L29/460 ,  H01L21/44 ,  H01L21/48 ,  H01L29/40

Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH 4 to WF 6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metallizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

公开(公告)号：CA1166765A

公开(公告)日：1984-05-01

申请号：CA406239

申请日：1982-06-29

Applicant: IBM

Inventor： DALAL HORMAZDYAR M ,  LOWNEY JOHN J

IPC: C23C14/04 ,  H01L21/027 ,  H01L21/28 ,  H01L21/285 ,  H01L21/306 ,  H01L29/47 ,  H01L29/872 ,  H01L21/42

Abstract: FI 9-81-030 Method For Making Low Barrier Schottky Devices By The Electron Beam Evaporation Of Reactive Metals A method for making low barrier Schottky devices by the electron beam evaporation of a reactive metal such as tantalum, titanium, hafnium, tungsten, molybdenum, and niobium which is selectively deposited at a semiconductor surface such as n-type silicon using a photresist mask. The method includes a series of steps during the deposition of the barrier metal for degassing the semiconductor substrate, photoresist mask, reactive metal charge and deposition chamber. More particularly, the method includes steps for preliminarily degassing the substrate, mask and surrounding chamber by infra red heating under vacuum followed by steps for preliminarily degassing the charge and surrounding chamber, while the substrate and mask are shielded by electron beam heating the charge while under vacuum. Thereafter, and prior to deposition, the substrate and mask are finally degassed by irradiation with X-rays produced by electron beam heating the charge to a temperature below evaporation for a predetermined time under vacuum. Upon further heating of the charge, the barrier metal is evaporated and deposited at the semiconductor substrate surface.