公开(公告)号：SG145626A1

公开(公告)日：2008-09-29

申请号：SG2008010068

申请日：2008-02-05

Applicant: CHARTERED SEMICONDUCTOR MFG ,  IBM ,  SAMSUNG ELECTRONICS CO LTD

Inventor： RESTAINO DARRYL D ,  WIDODO JOHNNY ,  BONILLA GRISELDA ,  DIMITRAKOPOULOS CHRISTOS D ,  GATES STEPHEN M ,  KIM JAE H ,  LANE MICHAEL W ,  LIU XIAO H ,  NGUYEN SON V ,  SHAW THOMAS M

Abstract: BEOL INTERCONNECT STRUCTURES WITH IMPROVED RESISTANCE TO STRESS A chip is provided which includes a back-end-of-line ("BEOL") interconnect structure. The BEOL interconnect structure includes a plurality of interlevel dielectric ("ILD") layers which include a dielectric material curable by ultraviolet ("UV") radiation. A plurality of metal interconnect wiring layers are embedded in the plurality of ILD layers. Dielectric barrier layers cover the plurality of metal interconnect wiring layers, the dielectric barrier layers being adapted to reduce diffusion of materials between the metal interconnect wiring layers and the ILD layers. One of more of the dielectric barrier layers is adapted to retain compressive stress while withstanding UV radiation sufficient to cure the dielectric material of the ILD layers, making the BEOL structure better capable of avoiding deformation due to thermal and/or mechanical stress.

公开(公告)号：DE102012222116B4

公开(公告)日：2016-08-25

申请号：DE102012222116

申请日：2012-12-04

Applicant: IBM

Inventor： DIMITRAKOPOULOS CHRISTOS D ,  FARMER DAMON B ,  GRILL ALFRED ,  LIN YU-MING ,  NEUMAYER DEBORAH A ,  PFEIFFER DIRK ,  ZHU WENJUAN

IPC: H01L29/786 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/20 ,  H01L29/16

Abstract: Halbleiterstruktur, aufweisend: eine Graphenschicht (14), die auf einer Oberseite (12) eines Grundsubstrats (10) angeordnet ist; und ein Doppelschicht-Gate-Dielektrikum, das auf einer Oberseite (12) der Graphenschicht (14) angeordnet ist, wobei das Doppelschicht-Gate-Dielektrikum, von unten nach oben, eine Siliciumnitridschicht (16) auf der Oberseite (12) der Graphenschicht (14) bereitstellt und eine auf einer Oberseite (12) der Siliciumsnitridschicht (16) bereitgestellte HfO2-Schicht (18) einschließt, wobei die Siliciumnitridschicht (16) und die HfO2-Schicht (18) über der Oberseite (12) der Graphenschicht (14) kontinuierlich vorhanden sind.

公开(公告)号：DE10006257B8

公开(公告)日：2006-12-14

申请号：DE10006257

申请日：2000-02-11

Applicant: IBM

Inventor： CHONDROUDIS KONSTANTINOS ,  DIMITRAKOPOULOS CHRISTOS D ,  KAGAN CHERIE R ,  KYMISSIS IOANNIS

IPC: H01L27/12 ,  H01L51/05 ,  H01L21/02 ,  H01L27/088 ,  H01L29/786 ,  H01L35/24 ,  H01L51/00 ,  H01L51/30

Abstract: An FET structure in accordance with the invention employs an organic-inorganic hybrid material as the semiconducting channel between source and drain electrodes of the device. The organic-inorganic material combines the advantages of an inorganic, crystalline solid with those of an organic material. The inorganic component forms an extended, inorganic one-, two-, or three-dimensional network to provide the high carrier mobilities characteristic of inorganic, crystalline solids. The organic component facilitates the self-assembly of these materials and enables the materials to be deposited by simple, low temperature processing conditions such as spin-coating, dip-coating, or thermal evaporation. The organic component is also used to tailor the electronic properties of the inorganic framework by defining the dimensionality of the inorganic component and the electronic coupling between inorganic units.

公开(公告)号：DE10006257B4

公开(公告)日：2006-06-29

申请号：DE10006257

申请日：2000-02-11

Applicant: IBM

Inventor： CHONDROUDIS KONSTANTINOS ,  DIMITRAKOPOULOS CHRISTOS D ,  KAGAN CHERIE R ,  KYMISSIS IOANNIS

IPC: H01L27/12 ,  H01L51/05 ,  H01L21/02 ,  H01L27/088 ,  H01L29/786 ,  H01L35/24 ,  H01L51/00 ,  H01L51/30

Abstract: An FET structure in accordance with the invention employs an organic-inorganic hybrid material as the semiconducting channel between source and drain electrodes of the device. The organic-inorganic material combines the advantages of an inorganic, crystalline solid with those of an organic material. The inorganic component forms an extended, inorganic one-, two-, or three-dimensional network to provide the high carrier mobilities characteristic of inorganic, crystalline solids. The organic component facilitates the self-assembly of these materials and enables the materials to be deposited by simple, low temperature processing conditions such as spin-coating, dip-coating, or thermal evaporation. The organic component is also used to tailor the electronic properties of the inorganic framework by defining the dimensionality of the inorganic component and the electronic coupling between inorganic units.