公开(公告)号：GB2515694A

公开(公告)日：2014-12-31

申请号：GB201418277

申请日：2013-03-05

Applicant: IBM

Inventor： DING FEI ,  KNOLL ARMIN W ,  MAHRT RAINER F ,  STOEFERLE THILO

IPC: H01S5/183

Abstract: A vertical microcavity (1) has a layer structure perpendicular to a vertical axis z, the layer structure comprising: a first reflector (100) and a second reflector (200), each comprising one or more material layers (111-131, 211-231) and being preferably a Bragg reflector, a confinement layer (10) separating the first and second reflectors, wherein an electromagnetic wave can be substantially confined, and wherein, the confinement layer comprises a body (12) and a defect (20), said defect delimited by two surfaces, a first surface (si) and a second surface (s2), each of said two surfaces being perpendicular to the vertical axis z, wherein, one (si) of said two surfaces is contiguous with said body (12), the other one (s2) of said two surfaces being contiguous with a layer (211) of the first or second reflector, and wherein one (s1) of said two surfaces is curved, such as to have a curved profile (21, 21', 22) in at least a plane section ((y, z), (x, z)) perpendicular to the layer structure, said curved profile having a vertex (25), which defines a maximal thickness h0 of the defect between the first surface and the second surface in said plane section, said maximal thickness h0 being less than a thickness of said contiguous layer (211).

公开(公告)号：DE112013001196T5

公开(公告)日：2014-11-20

申请号：DE112013001196

申请日：2013-04-25

Applicant: IBM

Inventor： DUERIG URS T ,  HOLZNER FELIX ,  KNOLL ARMIN W ,  RIESS WALTER HEINRICH

IPC: H01L21/768

Abstract: Die vorliegende Erfindung betrifft insbesondere Vorrichtungen und Verfahren zur Positionierung von Nanoobjekten (20) auf einer Oberfläche. Das Verfahren weist auf: Bereitstellen (S10 bis S50) zweier einander gegenüberliegender Oberflächen (15, 17) einschließlich einer ersten Oberfläche (15) und einer zweiten Oberfläche (17), wobei mindestens eine der zwei Oberflächen eine oder mehrere Positionierungsstrukturen (16, 16a) mit Abmessungen im Nanometerbereich aufweist; und einer ionischen Flüssigkeitssuspension (30) der Nanoobjekte zwischen den zwei Oberflächen, wobei jede der Oberflächen mit der ionischen Flüssigkeitssuspension eine elektrische Doppelschicht bildet, wobei jede der zwei Oberflächen ein selbes elektrisches Ladungsvorzeichen aufweist; und Sich-positionieren-lassen (S60) der Nanoobjekte in der Suspension einer Potenzialenergie (31) gemäß, die aus der elektrischen Ladung der zwei Oberflächen resultiert, und Abscheiden (S70) eines oder mehrerer der Nanoobjekte auf der ersten Oberfläche den Positionierungsstrukturen gemäß durch Verschieben von Minima (32) der Potenzialenergie zur ersten Oberfläche hin.

公开(公告)号：GB2501681A

公开(公告)日：2013-11-06

申请号：GB201207464

申请日：2012-04-30

Applicant: IBM

Inventor： HOLZNER FELIX ,  KNOLL ARMIN W

IPC: G03F7/00 ,  B29C33/02 ,  B29C33/38 ,  B29C35/02 ,  B82Y40/00

Abstract: A nanoimprint lithographic method uses a mold 100 which comprises a topographic pattern 140 formed by structures 130 having nanometer scale dimensions. The nanoscale structures are heated above a decomposition temperature (Td) of a thermally decomposable polymer film 210 such as poly (phthalaldehyde) which is disposed on a substrate 220 facing the mold. The structures are brought into contact with the polymer film to thermally decompose portions which correspond to the pattern of the structures and the structures are removed from the polymer film. There may be a material layer 120 with low thermal conductivity to thermally insulate the structures from the body of the mold. The structures may be brought into contact with the substrate 220 to cool the structures and prevent further thermal decomposition of the polymer layer 210 to give a very clean pattern.

公开(公告)号：GB2487156B

公开(公告)日：2013-06-26

申请号：GB201206335

申请日：2010-11-08

Applicant: IBM

Inventor： DUERIG URS T ,  GOTSMANN BERND W ,  KNOLL ARMIN W ,  LANTZ MARK ALFRED

IPC: G01Q70/08 ,  G01N13/00

公开(公告)号：DE112010004305T5

公开(公告)日：2012-10-04

申请号：DE112010004305

申请日：2010-11-08

Applicant: IBM

Inventor： GOTSMANN BERND W ,  KNOLL ARMIN W ,  LANTZ MARK A ,  DUERIG URS T

IPC: G01Q10/00 ,  G01N13/00 ,  G01Q70/08

Abstract: Die Erfindung betrifft ein Verfahren zum Abtasten einer Oberfläche (52) aus einem Material (50) mit einem Rastersondenmikroskop (SPM) (10), wobei das SPM einen Hebelarmsensor (100) aufweist, der so aufgebaut ist, dass er verschiedene Federverhaltensweisen (C, Ck) aufweist, und wobei das Verfahren die folgenden Schritte umfasst: – Betreiben des SPM im Kontaktmodus, wobei der Sensor die Materialoberfläche rasterförmig abtastet und durch Auslenken des Sensors durch die Materialoberfläche ein erstes Federverhalten (C) des Sensors (z. B. ein Grundbiegemodus des Sensors) bewirkt wird; und – Anregen eines zweiten Federverhaltens (Ck) des Sensors mit einem Anregungsmittel bei einer Resonanzfrequenz (z. B. eines oder mehrerer Resonanzmodi höherer Ordnung) des Hebelarmsensors, um eine Wechselwirkung zwischen dem Sensor und der Materialoberfläche zu modulieren und dadurch den Verschleiß der Materialoberfläche zu verringern.

公开(公告)号：GB2521417A

公开(公告)日：2015-06-24

申请号：GB201322497

申请日：2013-12-19

Applicant: SWISSLITHO AG ,  IBM

Inventor： DUERIG URS T ,  FRINGES STEFAN ,  KNOLL ARMIN W ,  HOLZNER FELIX

IPC: G03F7/20

Abstract: For large area standard precision patterning a thermo optical lithographic system 3 is used. For small area higher precision nanoscale patterning a thermal scanning probe lithographic system 7 comprising a heated raster scanning probe tip 34 is used. In this manner a thermally sensitive photoresist can be efficiently patterned with composite large area low resolution and small area high resolution patterns.

公开(公告)号：SG11201402453YA

公开(公告)日：2014-06-27

申请号：SG11201402453Y

申请日：2013-04-25

Applicant: IBM

Inventor： DUERIG URS T ,  HOLZNER FELIX ,  KNOLL ARMIN W ,  RIESS WALTER HEINRICH

IPC: H01L21/768

Abstract: A method for positioning nano-objects on a surface and an apparatus for implementing the method. The method includes: providing a first surface and a second surface in a position facing each other, where one or more of the surfaces exhibits one or more position structures having dimensions on the nanoscale; providing an ionic liquid suspension of the nano-objects between the two surfaces, where the suspension comprises two electrical double layers each formed at an interface with a respective one of the two surfaces, and the surfaces have electrical charges of the same sign; enabling the nano-objects in the suspension to position according to a potential energy resulting from the electrical charge of the two surfaces; and depositing one or more of the nano-objects on the first surface according to the positioning structures by shifting the minima of the potential energy towards the first surface.

公开(公告)号：CA2868577A1

公开(公告)日：2013-11-07

申请号：CA2868577

申请日：2013-04-25

Applicant: IBM

Inventor： DUERIG URS T ,  HOLZNER FELIX ,  KNOLL ARMIN W ,  RIESS WALTER HEINRICH

IPC: H01L21/768

Abstract: The present invention is notably directed to apparatuses and methods for positioning nano- objects (20) on a surface. The method comprises: providing (S10 S50) two surfaces (15, 17) including a first surface (15) and a second surface (17) in vis-à-vis, wherein at least one of the two surfaces exhibits one or more positioning structures (16, 16a) having dimensions on the nanoscale; and a ionic liquid suspension (30) of the nano-objects between the two surfaces, wherein each of the surfaces forms an electrical double layer with the ionic liquid suspension, each of the two surfaces having a same electrical charge sign; and letting (S60) nano-objects in the suspension position according to a potential energy (31) resulting from the electrical charge of the two surfaces and depositing (S70) one or more of the nano-objects on the first surface according to the positioning structures, by shifting minima (32) of the potential energy towards the first surface.

公开(公告)号：GB2500668A

公开(公告)日：2013-10-02

申请号：GB201205550

申请日：2012-03-29

Applicant: IBM

Inventor： DING FEI ,  STOEFERLE THILO ,  MAHRT RAINER F ,  KNOLL ARMIN W

IPC: H01S5/183 ,  H01S5/02 ,  H01S5/10

Abstract: A vertical microcavity 1 has a vertical layer structure comprising first and second reflectors 100, 200 each comprising one or more material layers 111-131, 211-231 and preferably being distributed Bragg reflectors (DBR), and a confinement layer 10 between the reflectors 100, 200 comprising a body 12 and a curved defect 20 which may be Gaussian or parabolic in at least one place parallel to the vertical axis. The defect 20 serves to confine light laterally, increase the quality (Q) factor and limit mode volume. The defect 20 may be formed using scanning probe lithography. The layers 211-231 of the reflector 200 contiguous with the defect may be curved in line with the defect 20, with the apex of each curve having the same height as the defect or decreasing height further from the defect 20. The confinement layer 10 may have a defect 20 on both the upper and lower surface.

公开(公告)号：GB2497379A

公开(公告)日：2013-06-12

申请号：GB201214521

申请日：2012-08-15

Applicant: IBM

Inventor： GROGG DANIEL ,  DESPONT MICHEL ,  KNOLL ARMIN W

IPC: H01H1/00

Abstract: A nano-electromechanical switch 1 comprises a curved cantilever beam 5 that flexes in response to an activation voltage applied between the beam and an actuator electrode 2 to close an electrical contact between the beam 5 and an output electrode 4. Before, during and after flexing of said curved cantilever beam 5 a remaining gap gR between the curved cantilever beam 5 and the actuator electrode 2 is substantially uniform. Beam 5 may rotate around a point of rotation POR when flexing and a motion direction angel b between a direction of motion DOM around the rotation point POR and a surface of the beam facing the actuator electrode can be designed such that after rotation the remaining gap is substantially uniform. The direction of motion angle b may be constant. A flexible hinge 5a may connect be the beam with an input electrode 3 and be less stiff than the main body of the beam. An initial gap g0 may be constant and formed by removal of a sacrificial layer during fabrication of the switch.