公开(公告)号：GB2365216A

公开(公告)日：2002-02-13

申请号：GB0102506

申请日：2001-02-01

Applicant: IBM

Inventor： COHEN STEPHEN ALAN ,  DALTON TIMOTHY JOSEPH ,  FITZSIMMONS JOHN ANTHONY ,  GATES STEPHEN MCCONNELL ,  GIGNAC LYNNE M ,  JAMISON PAUL CHARLES ,  LEE KANG-WOOK ,  PURUSHOTHAMAN SAMPATH ,  RESTAINO DARRYL D ,  SIMONYI EVA ,  WILDMAN HORATIO SEYMOUR

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/314

Abstract: A semiconductor device contains a diffusion barrier layer 14a, 14b, 14c. The semiconductor device preferably includes a semiconductor substrate 8 and a dielectric layer 10 containing conductive metal elements 12; and the diffusion barrier layer 14 is applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is typically more concentrated near the lower and upper surfaces 14a, 14b of the diffusion barrier layer as compared to the central portion 14c of the diffusion barrier layer. It is found that this process leads to improved adhesion of the diffusion barrier layer, but without raising the dielectric constant too much. The diffusion barrier layer may also include oxygen. The diffusion barrier layer may be formed by atomic layer deposition or by PECVD.

公开(公告)号：DE60213086T2

公开(公告)日：2006-12-28

申请号：DE60213086

申请日：2002-02-19

Applicant: IBM

Inventor： ECKERT ROBERT ,  HAY C ,  HEDRICK CURTIS ,  LEE KANG-WOOK ,  LINIGER GERHARD ,  SIMONYI ERIKA

IPC: H01L21/312 ,  H01L21/768

Abstract: A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90° C. or above so as to provide a surface containing Si-O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si-O bonds.

公开(公告)号：DE60213086D1

公开(公告)日：2006-08-24

申请号：DE60213086

申请日：2002-02-19

Applicant: IBM

Inventor： ECKERT ROBERT ,  HAY C ,  HEDRICK CURTIS ,  LEE KANG-WOOK ,  LINIGER GERHARD ,  SIMONYI ERIKA

IPC: H01L21/312 ,  H01L21/768

Abstract: A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90° C. or above so as to provide a surface containing Si-O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si-O bonds.

公开(公告)号：AT333144T

公开(公告)日：2006-08-15

申请号：AT02721047

申请日：2002-02-19

Applicant: IBM

Inventor： ECKERT ANDREW ROBERT ,  HAY JOHN C ,  HEDRICK JEFFREY CURTIS ,  LEE KANG-WOOK ,  LINIGER ERIC GERHARD ,  SIMONYI EVA ERIKA

IPC: H01L21/312 ,  H01L21/768

Abstract: A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90° C. or above so as to provide a surface containing Si-O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si-O bonds.