公开(公告)号：AT426247T

公开(公告)日：2009-04-15

申请号：AT00931376

申请日：2000-05-15

Applicant: IBM

Inventor： EDELSTEIN DANIEL ,  MCGAHAY VINCENT ,  NYE HENRY ,  OTTEY BRIAN ,  PRICE WILLIAM

IPC: H01L23/485 ,  H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/532

Abstract: A structure comprising a layer of copper, a barrier layer, a layer of AlCu, and a pad-limiting layer, wherein the layer of AlCu and barrier layer are interposed between the layer of copper and pad-limiting layer.

公开(公告)号：AU2002346512A1

公开(公告)日：2003-07-30

申请号：AU2002346512

申请日：2002-11-22

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： KANE TERENCE ,  LUSTIG NAFTALI E ,  MCDONALD ANN ,  MCGAHAY VINCENT ,  SEO SOON-CHEON ,  STAMPER ANTHONY K ,  WANG YUN YU ,  KALTALIOGLU ERDEM ,  CHEN TZE-CHIANG ,  ENGEL BRETT H ,  FITZSIMMONS JOHN A

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44 ,  H01L29/40 ,  H01L23/48 ,  H01L23/52

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structure comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

公开(公告)号：PL351305A1

公开(公告)日：2003-04-07

申请号：PL35130500

申请日：2000-05-15

Applicant: IBM

Inventor： EDELSTEIN DANIEL ,  MCGAHAY VINCENT ,  NYE HENRY ,  OTTEY BRIAN ,  PRICE WILLIAM

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/485 ,  H01L23/532

Abstract: A structure comprising a layer of copper, a barrier layer, a layer of AlCu, and a pad-limiting layer, wherein the layer of AlCu and barrier layer are interposed between the layer of copper and pad-limiting layer.

公开(公告)号：HU0201473A2

公开(公告)日：2002-08-28

申请号：HU0201473

申请日：2000-05-15

Applicant: IBM

Inventor： EDELSTEIN DANIEL ,  MCGAHAY VINCENT ,  NYE HENRY ,  OTTEY BRIAN ,  PRICE WILLIAM

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/485

Abstract: A structure comprising a layer of copper, a barrier layer, a layer of AlCu, and a pad-limiting layer, wherein the layer of AlCu and barrier layer are interposed between the layer of copper and pad-limiting layer.