公开(公告)号：MY134796A

公开(公告)日：2007-12-31

申请号：MYPI20030029

申请日：2003-01-06

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： CHEN TZE-CHIANG ,  WANG YUN YU ,  KALTALIOGLU ERDEM ,  ENGEL BRETT H ,  FITZSIMMONS JOHN A ,  KANE TERENCE ,  LUSTIG NAFTALI E ,  MCDONALD ANN ,  MCGAHAY VINCENT ,  SEO SOON-CHEON ,  STAMPER ANTHONY K

IPC: H01L21/44 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

Abstract: AN ADVANCED BACK-END-OF-LINE (BEOL) METALLIZATION STRUCTURE IS DISCLOSED. THE STRUCTURE INCLUDES A BILAYER DIFFUSION BARRIER OR CAP, WHERE THE FIRST CAP LAYER (116, 123) IS FORMED OF A DIELECTRIC MATERIAL PREFERABLY DEPOSITED BY A HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION (HDP CVD) PROCESS, AND THE SECOND CAP LAYER (117, 124) IS FORMED OF A DIELECTRIC MATERIAL PREFERABLY DEPOSITED BY A PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PE CVD) PROCESS. A METHOD FOR FORMING THE BEOL METALLIZATION STRUCTURE IS ALSO DISCLOSED. THE INVENTION IS PARTICULARLY USEFUL IN INTERCONNECT STRUCTURES COMPRISING LOW-K DIELECTRIC MATERIAL FOR THE INTER-LAYER DIELECTRIC (ILD) AND COPPER FOR THE CONDUCTORS.

公开(公告)号：AU2002346512A1

公开(公告)日：2003-07-30

申请号：AU2002346512

申请日：2002-11-22

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： KANE TERENCE ,  LUSTIG NAFTALI E ,  MCDONALD ANN ,  MCGAHAY VINCENT ,  SEO SOON-CHEON ,  STAMPER ANTHONY K ,  WANG YUN YU ,  KALTALIOGLU ERDEM ,  CHEN TZE-CHIANG ,  ENGEL BRETT H ,  FITZSIMMONS JOHN A

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44 ,  H01L29/40 ,  H01L23/48 ,  H01L23/52

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structure comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

公开(公告)号：EP1470580A4

公开(公告)日：2005-07-20

申请号：EP02784578

申请日：2002-11-22

Applicant: INFINEON TECHNOLOGIES AG ,  INFINEON TECHNOLOGIES CORP

Inventor： CHEN TZE-CHIANG ,  ENGEL BRETT H ,  FITZSIMMONS JOHN A ,  KANE TERENCE ,  LUSTIG NAFTALI E ,  MCDONALD ANN ,  MCGAHAY VINCENT ,  SEO SOON-CHEON ,  STAMPER ANTHONY K ,  WANG YUN YU ,  KALTALIOGLU ERDEM

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L21/76834 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76832 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer (116, 123) is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer (117, 124) is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structures comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

Abstract translation: 公开了一种先进的后端（BEOL）金属化结构。 该结构包括双层扩散阻挡层或盖，其中第一覆盖层由优选通过高密度等离子体化学气相沉积（HDP CVD）工艺沉积的电介质材料形成，并且第二覆盖层由优选沉积的介电材料形成 通过等离子体增强化学气相沉积（PE CVD）工艺。 还公开了一种用于形成BEOL金属化结构的方法。 本发明在包括用于层间电介质（ILD）的低k电介质材料和用于导体的铜的互连结构中是特别有用的。

公开(公告)号：DE60041817D1

公开(公告)日：2009-04-30

申请号：DE60041817

申请日：2000-05-15

Applicant: IBM

Inventor： EDELSTEIN DANIEL ,  MCGAHAY VINCENT ,  NYE HENRY ,  OTTEY BRIAN ,  PRICE WILLIAM

IPC: H01L23/485 ,  H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/532

Abstract: A structure comprising a layer of copper, a barrier layer, a layer of AlCu, and a pad-limiting layer, wherein the layer of AlCu and barrier layer are interposed between the layer of copper and pad-limiting layer.

公开(公告)号：CA2368950A1

公开(公告)日：2000-11-30

申请号：CA2368950

申请日：2000-05-15

Applicant: IBM

Inventor： MCGAHAY VINCENT ,  NYE HENRY A III ,  OTTEY BRIAN G R ,  EDELSTEIN DANIEL C ,  PRICE WILLIAM H

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/485 ,  H01L23/532

Abstract: A structure comprising a layer of copper (1), a barrier layer (10), a layer of AlCu (9), and a pad-limiting layer (7), wherein the layer of AlCu and barrie r layer are interposed between the layer of copper and pad-limiting layer.

公开(公告)号：PL201072B1

公开(公告)日：2009-03-31

申请号：PL35130500

申请日：2000-05-15

Applicant: IBM

Inventor： EDELSTEIN DANIEL ,  MCGAHAY VINCENT ,  NYE HENRY ,  OTTEY BRIAN ,  PRICE WILLIAM

IPC: H01L23/485 ,  H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/532

公开(公告)号：MY118419A

公开(公告)日：2004-10-30

申请号：MYPI20001978

申请日：2000-05-08

Applicant: IBM

Inventor： EDELSTEIN DANIEL CHARLES ,  MCGAHAY VINCENT ,  NYE HENRY A III ,  OTTEY BRIAN R ,  PRICE WILLIAM H

IPC: H01L21/4763 ,  H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/485

Abstract: A STRUCTURE COMPRISING A LAYER OF COPPER, A BARRIER LAYER, A LAYER OF ALCU, AND A PAD-LIMITING LAYER, WHEREIN THE LAYER OF ALCU AND BARRIER LAYER ARE INTERPOSED BETWEEN THE LAYER OF COPPER AND PAD-LIMITING LAYER. (FIGURE 2)

公开(公告)号：CZ20014145A3

公开(公告)日：2002-04-17

申请号：CZ20014145

申请日：2000-05-15

Applicant: IBM

Inventor： EDELSTEIN DANIEL ,  MCGAHAY VINCENT ,  NYE HENRY ,  OTTEY BRIAN ,  PRICE WILLIAM

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/485

Abstract: A structure comprising a layer of copper, a barrier layer, a layer of AlCu, and a pad-limiting layer, wherein the layer of AlCu and barrier layer are interposed between the layer of copper and pad-limiting layer.

公开(公告)号：AU4933500A

公开(公告)日：2000-12-12

申请号：AU4933500

申请日：2000-05-15

Applicant: IBM

Inventor： MCGAHAY VINCENT ,  NYE HENRY ,  OTTEY BRIAN ,  PRICE WILLIAM

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/485 ,  H01L23/532

Abstract: A structure comprising a layer of copper, a barrier layer, a layer of AlCu, and a pad-limiting layer, wherein the layer of AlCu and barrier layer are interposed between the layer of copper and pad-limiting layer.

公开(公告)号：CA2368950C

公开(公告)日：2012-10-02

申请号：CA2368950

申请日：2000-05-15

Applicant: IBM

Inventor： EDELSTEIN DANIEL C ,  MCGAHAY VINCENT ,  NYE HENRY A III ,  OTTEY BRIAN G R ,  PRICE WILLIAM H

IPC: H01L23/485 ,  H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/532

Abstract: A structure comprising a layer of copper (1), a barrier layer (10), a layer of AlCu (9), and a pad-limiting layer (7), wherein the layer of AlCu and barrier layer are interposed between the layer of copper and pad-limiting layer.