公开(公告)号：DE2057843A1

公开(公告)日：1971-07-01

申请号：DE2057843

申请日：1970-11-24

Applicant: IBM

Inventor： REVITZ MARTIN ,  EDWARD TURENE FRANCIS

IPC: H01L23/482 ,  H01L23/532 ,  H01L

Abstract: An inclination sensor provides means for detection of dangerous attitudes of vehicles, such as road and off-road vehicles including farm tractors, earth-moving equipment, and the like, whether caused by negligence on the part of the operator or by accident. The sensor provides a warning signal or automatically controls the vehicle so that it does not upset thereby endangering the life of the operator or others in its vicinity.

公开(公告)号：CA1238118A

公开(公告)日：1988-06-14

申请号：CA501735

申请日：1986-02-12

Applicant: IBM

Inventor： AHLGREN DAVID C ,  MA WILLIAM H ,  REVITZ MARTIN

IPC: H01L21/033 ,  H01L21/28 ,  H01L21/314 ,  H01L21/318 ,  H01L21/425

Abstract: A method, useful in fabricating semiconductor integrated circuits, for passivating an undercut formed by etch-back of a silicon dioxide layer under a diverse insulator film is disclosed. The method includes the step of coating the device with a thin, conformal film to a thickness sufficient only to line, without refilling, the lateral walls of the undercut region.

公开(公告)号：DE3171252D1

公开(公告)日：1985-08-08

申请号：DE3171252

申请日：1981-10-29

Applicant: IBM

Inventor： BARTHOLOMEW ROBERT FORBELL ,  GARBARINO PAUL LOUIS ,  GARDINER JAMES ROBERT ,  REVITZ MARTIN ,  SHEPARD JOSEPH FRANCIS

IPC: H01L21/28 ,  H01L21/285 ,  H01L29/78 ,  H01L21/60

公开(公告)号：DE3165364D1

公开(公告)日：1984-09-13

申请号：DE3165364

申请日：1981-05-12

Applicant: IBM

Inventor： GARDINER JAMES ROBERT ,  MAKAREWICZ STANLEY RICHARD ,  REVITZ MARTIN ,  SHEPARD JOSEPH FRANCIS

IPC: H01L27/10 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/8242 ,  H01L23/532 ,  H01L27/108 ,  H01L29/43 ,  H01L29/78 ,  H01L23/52 ,  H01L21/90

Abstract: In double polysilicon devices direct shorts between overlying polysilicon conductors (3,7) due to a "polysilicon void phenomenon" are prevented by patterning an appropriate etch stop (5) between the conductors.

公开(公告)号：CA1115856A

公开(公告)日：1982-01-05

申请号：CA322415

申请日：1979-02-27

Applicant: IBM

Inventor： GARBARINO PAUL L ,  REVITZ MARTIN ,  SHEPARD JOSEPH F

IPC: H01L29/78 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/339 ,  H01L21/8234 ,  H01L29/762 ,  H01L21/225

Abstract: In a field effect device such as a charge coupled device or field effect transistor in which at least two levels of polycrystalline silicon conductors are used; these two levels of polycrystalline silicon are isolated from one another with a dielectric layer. Disclosed is a dielectric layer of reflowed phosphosilicate glass (PSG) on top surface of a polycrystalline silicon layer which may be doped by phosphorous impurities diffusing from PSG.