公开(公告)号：DE19538792A1

公开(公告)日：1997-04-24

申请号：DE19538792

申请日：1995-10-18

Applicant: IBM

Inventor： BAYER THOMAS ,  GRESCHNER JOHANN DR ,  MEISSNER KLAUS ,  STEINER WERNER ,  STOEHR ROLAND

IPC: G01R1/073 ,  G01R31/28 ,  H01L21/66

Abstract: The invention relates to a contact probe arrangement 1 for electrically connecting a test system with the circular contact pads 2 of a device to be tested 3. In order to achieve a low contact resistance the contact probes 4 are orthogonally pressed onto the contact pads 2, and for adjusting height differences in the contact pads 2 caused by an uneven surface of the device to be tested 3 they may bend out laterally into the provided areas 6a, 6b. The contact probes 4 are located in guide grooves 5. The guide grooves 5 as well as the areas 6a, 6b are provided in a plane parallel to the surface of a guide plate 7 and are covered by a protective plate. This assures a very dense contact probe array. Contact probe arrays of this type may be used, for example, for detecting opens and shorts in electrical circuit arrays of microelectronic compounds.

公开(公告)号：DE19538792C2

公开(公告)日：2000-08-03

申请号：DE19538792

申请日：1995-10-18

Applicant: IBM

Inventor： BAYER THOMAS ,  GRESCHNER JOHANN ,  MEISSNER KLAUS ,  STEINER WERNER ,  STOEHR ROLAND

IPC: G01R1/073 ,  G01R31/28 ,  H01L21/66 ,  H01R11/18

Abstract: The invention relates to a contact probe arrangement for electrically connecting a test system with contact pads of a device to be tested. The contact probes are located in guide grooves. The guide grooves as well as areas are provided in a plane parallel to the surface of a guide plate and are covered by a protective plate. The contact probes may bend out laterally into the respective areas. This assures a very dense contact probe array. Contact probe arrays of this type may be used, for example, for detecting opens and shorts in integrated circuits or semiconductor chips. The invention overcomes the problem of adjusting for height differences in the contact pads caused by an uneven surface of the device to be tested.

公开(公告)号：DE3886754D1

公开(公告)日：1994-02-10

申请号：DE3886754

申请日：1988-10-19

Applicant: IBM DEUTSCHLAND

Inventor： BAYER THOMAS ,  BARTHA JOHANN DR ,  GRESCHNER JOHANN DR ,  KERN DIETER ,  MATTERN VOLKER ,  STOEHR ROLAND

IPC: C08J7/00 ,  C23F4/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01J37/20

Abstract: The invention relates to a vacuum reactor for etching thermally poorly conducting substrates with a high etching rate uniformity, in which the substrates (33) to be etched are arranged in a holder (35, 36) at a specific distance from the cathode (31) to which RF energy is applied. In an advantageous embodiment of the invention, the cathode is raised in the region of the substrate (33) to be etched and brought up to the underside of the substrate as far as a distance of approximately 0.2 mm. The cathode consists of aluminium, and is provided in the region of the substrate to be etched with a layer (32) acting as a complete radiator. The heat formed during the RIE is dissipated by thermal radiation, and the radiation reflected back onto the substrates from the cathode is absorbed by the layer (32). The invention also comprises a process for etching thermally poorly conducting substrates, in particular for etching plastic substrates.