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    METHOD FOR MANUFACTURING FILM MASK WITH MASK FIELD
    1.
    发明专利
    METHOD FOR MANUFACTURING FILM MASK WITH MASK FIELD 失效

    公开(公告)号：JPH10261584A

    公开(公告)日：1998-09-29

    申请号：JP5301298

    申请日：1998-03-05

    Applicant: IBM

    Inventor： BAYER THOMAS ,  GRESCHNER JOHANN ,  KALT SAMUEL ,  MEISSNER KLAUS ,  PFEIFFER HANS

    IPC: G03F1/20 ,  G03F1/22 ,  H01L21/027 ,  H01L21/306 ,  G03F1/16

    Abstract: PROBLEM TO BE SOLVED: To easily form a support wall by forming a film mask with a mask field and a single-crystal silicon body, providing a support wall being covered with a film, forming the support wall by anisotropic plasma etching, and performing wet etching immediately before reaching the covering film of the support wall. SOLUTION: The support wall of a mask with a mask field 8 where a boundary is screened by a thin support wall 1 consists of a single-crystal silicon and is covered with a film 2 that is approximately 0.2 mm-2 μm thick. The support wall is formed by the anisotropic plasma etching of the single-crystal silicon body 1. Therefore, an opening that is approximately 400 μm deep with a vertical wall is etched into the silicon body. Plasma etching stops immediately before reaching the film 2 and the final thickness part before the film is eliminated by wet etching. A support wall being arranged accurately vertically to the film is formed easily, thus preventing the film from being damaged.

    FILM MASK FOR LITHOGRAPHY BY SHORT-WAVELENGTH RADIATION
    2.
    发明专利
    FILM MASK FOR LITHOGRAPHY BY SHORT-WAVELENGTH RADIATION 失效

    公开(公告)号：JPH10275773A

    公开(公告)日：1998-10-13

    申请号：JP5300198

    申请日：1998-03-05

    Applicant: IBM

    Inventor： GRESCHNER JOHANN ,  KALT SAMUEL ,  MEISSNER KLAUS ,  PAUL RUDOLF

    IPC: G03F1/16 ,  G03F1/20 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide a film mask for electron beam lithography that has a high mechanical stability and a thin film thickness, cannot be subjected to stress, and allows a submicron structure body to be easily created without any rounding effect using a reactive ion etching method. SOLUTION: In the case of a film mask for forming a surface region using electron beams or particle beams, a silicon nitride layer 1 with a feedthrough opening for demarcating a mask pattern is provided on one surface of a semiconductor wafer 2 that is preferably made of silicon. A recess 3 in bath tub type is extended from the other surface of the semiconductor wafer 2 to a layer adhesion surface.

    6.
    发明专利
    未知

    公开(公告)号：FR2740224B1

    公开(公告)日：1998-12-31

    申请号：FR9612844

    申请日：1996-10-15

    Applicant: IBM

    Inventor： BAYER THOMAS ,  MEISSNER KLAUS ,  STOHR ROLAND ,  GRESCHNER JOHANN ,  STEINER WERNER

    IPC: G01R1/073 ,  G01R31/28 ,  H01L21/66

    Abstract: The invention relates to a contact probe arrangement for electrically connecting a test system with contact pads of a device to be tested. The contact probes are located in guide grooves. The guide grooves as well as areas are provided in a plane parallel to the surface of a guide plate and are covered by a protective plate. The contact probes may bend out laterally into the respective areas. This assures a very dense contact probe array. Contact probe arrays of this type may be used, for example, for detecting opens and shorts in integrated circuits or semiconductor chips. The invention overcomes the problem of adjusting for height differences in the contact pads caused by an uneven surface of the device to be tested.

    9.
    发明专利
    未知

    公开(公告)号：DE19538792C2

    公开(公告)日：2000-08-03

    申请号：DE19538792

    申请日：1995-10-18

    Applicant: IBM

    Inventor： BAYER THOMAS ,  GRESCHNER JOHANN ,  MEISSNER KLAUS ,  STEINER WERNER ,  STOEHR ROLAND

    IPC: G01R1/073 ,  G01R31/28 ,  H01L21/66 ,  H01R11/18

    Abstract: The invention relates to a contact probe arrangement for electrically connecting a test system with contact pads of a device to be tested. The contact probes are located in guide grooves. The guide grooves as well as areas are provided in a plane parallel to the surface of a guide plate and are covered by a protective plate. The contact probes may bend out laterally into the respective areas. This assures a very dense contact probe array. Contact probe arrays of this type may be used, for example, for detecting opens and shorts in integrated circuits or semiconductor chips. The invention overcomes the problem of adjusting for height differences in the contact pads caused by an uneven surface of the device to be tested.

    10.
    发明专利
    未知

    公开(公告)号：DE19651029C2

    公开(公告)日：1999-12-02

    申请号：DE19651029

    申请日：1996-12-09

    Applicant: IBM

    Inventor： BAYER THOMAS ,  GRESCHNER JOHANN ,  MEISSNER KLAUS

    IPC: G01B5/02 ,  G01B5/18 ,  G01D21/00 ,  H01L21/00 ,  G01B7/34

    Abstract: The invention relates to calibration standards which are used chiefly for the calibration of profilometers and in atomic force- and scanning probe microscopes. The calibration standard has one step of defined height H or a multi-step system formed of several steps of the same step-height H and consisting of exactly one material. The manufacturing procedure for the calibration standard requires only a single masking layer for each of the different versions in the form of a one-step standard or a multi-step system.

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