公开(公告)号：CA3102836A1

公开(公告)日：2013-04-04

申请号：CA3102836

申请日：2012-08-30

Applicant: IBM

Inventor： AFZALI-ARDAKANI ALI ,  TULEVSKI GEORGE STOJAN ,  PARK HONGSIK

IPC: C01B32/158 ,  B82Y40/00 ,  C01B32/16 ,  C01B32/168 ,  C01B32/174 ,  C12N15/10

Abstract: A method of forming a structure having selectively placed carbon nanotubes, a method of making charged carbon nanotubes, a bi-functional precursor, and a structure having a high density carbon nanotube layer with minimal bundling. Carbon nanotubes are selectively placed on a substrate having two regions. The first region has an isoelectric point exceeding the second region's isoelectric point. The substrate is immersed in a solution of a bi-functional precursor having anchoring and charged ends. The anchoring end bonds to the first region to form a self-assembled monolayer having a charged end. The substrate with charged monolayer is immersed in a solution of carbon nanotubes having an opposite charge to form a carbon nanotube layer on the self-assembled monolayer. The charged carbon nanotubes are made by functionalization or coating with an ionic surfactant.

公开(公告)号：CA2847579C

公开(公告)日：2021-02-23

申请号：CA2847579

申请日：2012-08-30

Applicant: IBM

Inventor： AFZALI-ARDAKANI ALI ,  TULEVSKI GEORGE STOJAN ,  PARK HONGSIK

IPC: C01B32/158 ,  B82Y40/00 ,  C01B32/16 ,  C01B32/168 ,  C01B32/174

Abstract: There is disclosed a method of forming a structure having selectively placed carbon nanotubes ("CNTs") on a substrate to minimize bundling and areas of low density. In a first aspect, the method comprises: providing a substrate having a surface; contacting the surface of the substrate and a solution of a precursor molecule to form a self-assembled monolayer having a first ionic charge moiety on the surface; forming a plurality of CNTs having a second ionic charge moiety oppositely charged to the first ionic charge moiety by (1) bonding the plurality of CNTs with an organic molecule having a carboxylic acid ester group to form a plurality of functionalized CNTs, and (2) converting the carboxylic acid ester group to the second ionic charge moiety; and contacting the self-assembled monolayer and a dispersion of the plurality of CNTs having the second ionic charge moiety.

公开(公告)号：GB2497176A

公开(公告)日：2013-06-05

申请号：GB201220382

申请日：2012-11-13

Applicant: IBM

Inventor： AFZALI-ARDAKANI ALI ,  CHANDRA BHUPESH ,  TULEVSKI GEORGE STOJAN

IPC: H01L51/00 ,  H01L51/05

Abstract: A composition and method for forming a field effect transistor with a stable n-doped nano-component. The method includes forming a gate dielectric on a gate, forming a channel comprising a nano-component on the gate dielectric, forming a source over a first region of the nano-component, forming a drain over a second region of the nano-component to form a field effect transistor, and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene (Fig., each of R1, R2, R3, and R4 can be hydrogen, an alkyl group of C1 to C16 carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group or a carboxylic ester group) to produce a stable n-doped nano-component. Dihydrotetraazapentacene may be applied in solution with DMSO, DMF or NMP as solvent. The nano-component is preferably a carbon nanotube, a semi-conductor nanotube, semiconductor nanocrystal, a semiconductor nanowire or it comprises elements of groups III, IV, V and VI.

公开(公告)号：GB2497175A

公开(公告)日：2013-06-05

申请号：GB201220379

申请日：2012-11-13

Applicant: IBM

Inventor： CHANDRA BHUPESH ,  AFZALI-ARDAKANI ALI ,  TULEVSKI GEORGE STOJAN ,  XIA FENGNIAN

IPC: H01L51/00 ,  H01L51/05

Abstract: A method for doping a graphene and carbon nanotube thin-film transistor field-effect transistor device to decrease contact resistance with a metal electrode, comprising; selectively applying a dopant to a metal contact region of a graphene and nanotube field-effect transistor device. Also disclosed are graphene and nanotube thin-film, field effect transistors: where the dopant is disposed on the graphene/nanotube layer 140 and the metal electrodes formed thereafter; and where the graphene/nanotube layer is formed over the metal electrodes and the dopant is selectively applied to the areas above the dopant, respectively. The dopant may be one of cerium ammonium nitrate, cerium ammonium sulphate, ruthenium bipyridyl complex or triethyloxonium hexachloro antimonate. The dopant may be provided in a solution, where the solvent may be one of dichloroethane, alcohol or dichlorobenzene. The dopant may be applied to the transistor by immersing the transistor in the solution for a predetermined time.

公开(公告)号：DE102012220731A1

公开(公告)日：2013-05-29

申请号：DE102012220731

申请日：2012-11-14

Applicant: IBM

Inventor： AFZALI-ARDAKANI ALI ,  CHANDRA BHUPESH ,  TULEVSKI GEORGE STOJAN ,  XIA FENGNIAN

IPC: H01L29/786 ,  B82Y99/00 ,  H01L21/335

Abstract: Ein Verfahren und eine Vorrichtung zum Dotieren einer Graphen-und-Nanoröhrchen-Dünnschichttransistor-Feldeffekttransistoreinheit zum Verringern des Kontaktwiderstands mit einer Metallelektrode. Das Verfahren weist das selektive Aufbringen eines Dotierstoffs auf einen Metallkontaktbereich einer Graphen-und-Nanoröhrchen-Feldeffekttransistoreinheit zum Verringern des Kontaktwiderstands der Feldeffekttransistoreinheit auf.

公开(公告)号：GB2496347A

公开(公告)日：2013-05-08

申请号：GB201303286

申请日：2011-06-07

Applicant: IBM

Inventor： BOL AGEETH ANKE ,  AFZALI-ARDAKANI ALI ,  TULEVSKI GEORGE STOJAN

IPC: H01B1/04 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/04 ,  H01L51/00 ,  H01L51/44

Abstract: Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided.

公开(公告)号：GB2510058A

公开(公告)日：2014-07-23

申请号：GB201322674

申请日：2012-05-07

Applicant: IBM

Inventor： CHEN ZHIHONG ,  FRANKLIN AARON D ,  HAN SHU-JEN ,  HANNON JAMES BOWLER ,  SAENGER KATHERINE L ,  TULEVSKI GEORGE STOJAN

IPC: H01L29/423 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/16 ,  H01L29/49 ,  H01L29/778 ,  H01L29/786 ,  H01L51/00

Abstract: Transistor devices having nanoscale material-based channels (e.g., carbon nanotube or graphene channels) and techniques for the fabrication thereof are provided. In one aspect, a transistor device is provided. The transistor device includes a substrate; an insulator on the substrate; a local bottom gate embedded in the insulator, wherein a top surface of the gate is substantially coplanar with a surface of the insulator; a local gate dielectric on the bottom gate; a carbon-based nanostructure material over at least a portion of the local gate dielectric, wherein a portion of the carbon-based nanostructure material serves as a channel of the device; and conductive source and drain contacts to one or more portions of the carbon-based nanostructure material on opposing sides of the channel that serve as source and drain regions of the device.

公开(公告)号：GB2497175B

公开(公告)日：2014-06-11

申请号：GB201220379

申请日：2012-11-13

Applicant: IBM

Inventor： CHANDRA BHUPESH ,  AFZALI-ARDAKANI ALI ,  TULEVSKI GEORGE STOJAN ,  XIA FENGNIAN

IPC: H01L51/00 ,  H01L51/05

Abstract: A method and an apparatus for doping at least one of a graphene and a nanotube thin-film transistor field-effect transistor device to decrease contact resistance with a metal electrode. The method includes selectively applying a dopant to a metal contact region of at least one of a graphene and a nanotube field-effect transistor device to decrease the contact resistance of the field-effect transistor device.

公开(公告)号：GB2497176B

公开(公告)日：2014-01-15

申请号：GB201220382

申请日：2012-11-13

Applicant: IBM

Inventor： AFZALI-ARDAKANI ALI ,  CHANDRA BHUPESH ,  TULEVSKI GEORGE STOJAN

IPC: H01L51/00 ,  H01L51/05

公开(公告)号：GB2496956A

公开(公告)日：2013-05-29

申请号：GB201219636

申请日：2012-11-01

Applicant: IBM

Inventor： CHANDRA BHUPESH ,  MAAROUF AHMED ,  KASRY AMAL ,  MARTYNA GLENN JOHN ,  TULEVSKI GEORGE STOJAN ,  BOL AGEETH ANKE

IPC: H01B1/04 ,  H01L21/02 ,  H01L29/10 ,  H01L29/66 ,  H01L29/786 ,  H01L31/0224 ,  H01L33/42 ,  H01L51/00 ,  H01L51/05

Abstract: The transparent hybrid film comprises a layer of graphene deposited atop a layer of nanotubes, preferably carbon nanotubes. Two different production methods are disclosed. The film may be used as a transparent electrode with a variety of applications. Alternatively the film may be used as a channel material in a field effect transistor.