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    INTERMEDIATE STRUCTURE FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES, METHOD OF MAKING FIELD EFFECT TRANSISTORS AND TRANSISTORS
    13.
    发明专利
    INTERMEDIATE STRUCTURE FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES, METHOD OF MAKING FIELD EFFECT TRANSISTORS AND TRANSISTORS 未知

    公开(公告)号：DE3278605D1

    公开(公告)日：1988-07-07

    申请号：DE3278605

    申请日：1982-10-14

    Applicant: IBM

    Inventor： CHAPPELL BARBARA ALANE ,  CHAPPELL TERRY IVAN ,  WOODALL JERRY MCPHERSON

    IPC: H01L29/80 ,  H01L21/3063 ,  H01L21/331 ,  H01L21/338 ,  H01L27/08 ,  H01L29/10 ,  H01L29/205 ,  H01L29/267 ,  H01L29/73 ,  H01L29/812 ,  H01L29/861 ,  H01L29/72

    Abstract: An intermediate structure for use in the manufacture of semiconductor devices such as field effect transistors, comprises a monocrystalline semiconductor body having a first outer layer (2), a central layer (3) and a second outer layer (4) each of said first and second outer layers being of semiconductor material different from the semiconductor material of the central layer and forming a heterojunction (5, 6) whith the central layer. The thickness of the central layer (3) is of the order of the transport length of a charge carrier in the semiconductor material of that layer. Preferably, at least two adjacent layers of the intermediate structure have substantially equal electron energy work functions. … A vertical field effect transistor is formed in a portion of an intermediate structure by removing areas (30, 31) of the second outer and central layers (4, 3) on each side of the portion, removing an area (32) of the second outer layer (4) at one end of the portion, etching the central layer (3) to form a web (22) connecting the first and second outer layers (2, 4), forming insulation (25, 27) on the exposed surfaces of the first and second outer layers (2, 4), forming a Schottky barrier electrode (23, 24) on the web and providing electrical contacts (35) to the first and second outer layers.

    14.
    发明专利
    未知

    公开(公告)号：IT1149988B

    公开(公告)日：1986-12-10

    申请号：IT2302380

    申请日：1980-06-26

    Applicant: IBM

    Inventor： HOVEL HAROLD JOHN ,  WOODALL JERRY MCPHERSON

    IPC: H01L31/04 ,  H01L31/0216 ,  H01L

    Abstract: Surface recombination in solar cells that is produced by band bending at the surface of the semiconductor which is in turn caused by defect states which pin the Fermi level at the surface, may be improved by applying a surface layer which may be a plasma oxide that has been hydrogen annealed and this layer may also be useful as an antireflecting coating.

    COLD ELECTRON EMISSION DEVICE
    15.
    发明专利
    COLD ELECTRON EMISSION DEVICE 未知

    公开(公告)号：DE3167275D1

    公开(公告)日：1985-01-03

    申请号：DE3167275

    申请日：1981-04-10

    Applicant: IBM

    Inventor： CUOMO JEROME JOHN ,  DREYFUS RUSSELL WARREN ,  WOODALL JERRY MCPHERSON

    IPC: H01J1/30 ,  H01J1/308 ,  H01J1/34 ,  H01L49/00

    Abstract: A high brightness, essentially monoenergetic electron source is constructed in solid state material by providing a semiconductor body with an electron confinement barrier over most of the surface, the barrier having a relatively small opening exposing the semiconductor body, in the relatively small opening a material is placed in contact with the semiconductor body that has a work function that is lower than the energy of excited electrons in the semiconductor. In this structure electrons from hole-electron pairs generated in the semiconductor are repelled and recombination is inhibited by the barrier except in the relatively small opening where they are injected into the surrounding environment through the lower work function material. The hole-electron pair generation may be by irradiation or by electrical injection. The electron source is useful for such applications as high brightness sources, digital communications, cathode ray tube electron sources and scanning electron microscopes.

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