公开(公告)号：DE50207038D1

公开(公告)日：2006-07-06

申请号：DE50207038

申请日：2002-12-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

IPC: H01L41/22 ,  H03H3/02 ,  H01L41/083 ,  H01L41/09 ,  H03H9/17

Abstract: In a method of producing an electrode for a resonator in thin-film technology, the electrode of the resonator is embedded in an insulating layer such that a surface of the electrode is exposed, and that a surface defined by the electrode and the insulating layer is substantially planar.

公开(公告)号：DE10045090A1

公开(公告)日：2002-03-28

申请号：DE10045090

申请日：2000-09-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  TIMME HANS-JOERG

IPC: H03H9/17 ,  H03H9/15 ,  H03H9/13 ,  H01L41/04

Abstract: The resonator comprises a first electrode (E1), a second electrode (E2) and a piezoelectric layer (P) arranged between the above. A first acoustic compression layer (V1) is arranged between the piezoelectric layer (E1) and the first electrode (E1) with a higher acoustic impedance than the first electrode (E1).

公开(公告)号：DE10035423C1

公开(公告)日：2001-11-22

申请号：DE10035423

申请日：2000-07-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  LUEDER ELBRECHT ,  HERZOG THOMAS RAINER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

IPC: H01L21/28 ,  H01L37/02 ,  H01L41/08 ,  H01L41/09 ,  H01L41/22 ,  H01L41/319 ,  H03H3/02 ,  H03H9/17 ,  H01L21/20 ,  H01L37/00 ,  H01L41/047 ,  H03H9/25

Abstract: Semiconductor element has an auxiliary layer (H) arranged between a lower electrode (U) and a piezoelectric or pyroelectric layer (S). The auxiliary layer promotes the growth of the piezoelectric or pyroelectric layer and consists of amorphous silicon, amorphous silicon oxide or amorphous silicon nitride. An Independent claim is also included for a process for the production of the semiconductor element. Preferred Features: The piezoelectric or pyroelectric layer is made from AlN. The lower electrode and an upper electrode (O) in the layer succession are made from W, Mo, Pt and/or an Al alloy.

公开(公告)号：DE50114591D1

公开(公告)日：2009-01-29

申请号：DE50114591

申请日：2001-05-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  ELBRECHT LUEDER ,  TIMME HANS-JOERG

IPC: C23C14/58 ,  H01L41/22 ,  C23C16/56 ,  H01C17/24 ,  H01L41/09 ,  H01L41/187 ,  H03H3/04

Abstract: Production of a layer having a locally adapted and/or predefined layer thickness profile comprises applying a layer onto a substrate; determining a removal profile for the applied layer; and guiding an ion beam once over the layer so that the layer is locally etched at the site of the ion beam corresponding to the removal profile and a layer having a locally adapted and/or predefined layer thickness profile is produced. Preferably the spread of the ion beam is more than 1, preferably more than 5 mm, or less than 100 mm, preferably less than 50 mm. The ion beam is an argon ion beam with a gauss-like current density distribution. The ion beam is guided in traces over the layer and the trace distance is less than the half-width spread of the beam.

公开(公告)号：DE50113475D1

公开(公告)日：2008-02-21

申请号：DE50113475

申请日：2001-07-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  HERZOG THOMAS RAINER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

IPC: H01L37/02 ,  H01L41/22 ,  H01L41/319 ,  H03H3/02

公开(公告)号：ES2276835T3

公开(公告)日：2007-07-01

申请号：ES01976209

申请日：2001-09-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  TIMME HANS-JOERG

IPC: H03H9/17

Abstract: Resonador acústico con un primer electrodo (E1), un segundo electrodo (E2) y una capa piezoeléctrica (P) dispuesta en medio, disponiéndose entre el primer electrodo (E1) y la capa piezoeléctrica (P) una primera capa de compresión acústica (V1), que presenta una mayor impedancia acústica que el primer electrodo (E1), caracterizado porque la razón de la impedancia acústica de la primera capa de compresión acústica (V1) respecto a la impedancia acústica de la capa piezoeléctrica (P) es mayor que 2.

公开(公告)号：AT345593T

公开(公告)日：2006-12-15

申请号：AT01976209

申请日：2001-09-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  TIMME HANS-JOERG

IPC: H03H9/17

Abstract: The resonator comprises a first electrode (E1), a second electrode (E2) and a piezoelectric layer (P) arranged between the above. A first acoustic compression layer (V1) is arranged between the piezoelectric layer (E1) and the first electrode (E1) with a higher acoustic impedance than the first electrode (E1).

公开(公告)号：AT268056T

公开(公告)日：2004-06-15

申请号：AT01962822

申请日：2001-07-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  HERZOG THOMAS RAINER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

IPC: H01L21/28 ,  H01L37/02 ,  H01L41/08 ,  H01L41/09 ,  H01L41/22 ,  H01L41/319 ,  H03H3/02 ,  H03H9/17

Abstract: A semiconductor component is provided having a layer sequence for conversion of acoustic to thermal signals and electrical voltage changes to one another, as well as a process for its production. The layer sequence has a lower electrode, an upper electrode and a layer which is arranged between them and is piezoelectrical or pyroelectrical. An auxiliary layer is arranged between the lower electrode and the layer and is used for homogeneously oriented growth of the layer during the production process. The auxiliary layer preferably consists essentially of amorphous silicon, amorphous silicon oxide or amorphous silicon nitride.

公开(公告)号：DE10162540A1

公开(公告)日：2003-07-10

申请号：DE10162540

申请日：2001-12-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANOSCH MARTIN ,  NESSLER WINFRIED ,  MARKSTEINER STEPHAN ,  HANDTMANN MARTIN ,  ELBRECHT LUEDER ,  TIMME HANS-JOERG

IPC: H01C17/24 ,  H01G4/255 ,  H01L41/22 ,  H01L41/316 ,  H03H3/02 ,  H01L49/02

公开(公告)号：DE10150253A1

公开(公告)日：2003-04-30

申请号：DE10150253

申请日：2001-10-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  ELBRECHT LUEDER ,  TIMME HANS-JOERG ,  FATTINGER GERNOT

IPC: H03H9/58 ,  H01L41/083 ,  H03H9/15

Abstract: Piezoelectric component comprises a layer stack (50) made from piezoelectric layers (10,12) and electrodes (30,32,34). The piezoelectric layers are arranged within the layer stack so that each layer is arranged between two neighboring electrodes. All electrodes are either connected to a signal input or a signal output. Preferred Features: The layer stack comprises two piezoelectric layers and three electrodes or three piezoelectric layers and four electrodes. The layer stack is acoustically insulated from the substrate by a hollow chamber.