公开(公告)号：WO2012098471A3

公开(公告)日：2012-11-22

申请号：PCT/IB2012000518

申请日：2012-03-17

Applicant: INTEL CORP ,  HECK JOHN ,  BAR HANAN ,  JONES RICHARD ,  PARK HYUNDAI

Inventor： HECK JOHN ,  BAR HANAN ,  JONES RICHARD ,  PARK HYUNDAI

IPC: H01S5/343 ,  H01S5/20

CPC classification number: H01S5/021 ,  H01S5/0215 ,  H01S5/0422 ,  H01S5/1032 ,  H01S5/2004 ,  H01S5/2205

Abstract: Described herein is a hybrid III-V Silicon laser comprising a first semiconductor region including layers of semiconductor materials from group III, group IV, or group V semiconductor to form an active region; and a second semiconductor region having a silicon waveguide and bonded to the first semiconductor region via direct bonding at room temperature of a layer of the first semiconductor region to a layer of the second semiconductor region.

Abstract translation: 本文描述了一种混合III-V硅激光器，其包括：第一半导体区域，其包括来自III族，IV族或V族半导体的半导体材料层以形成有源区; 以及第二半导体区域，其具有硅波导，并且在第一半导体区域的层的室温下通过直接结合到第二半导体区域的层而结合到第一半导体区域。

公开(公告)号：WO2012009149A3

公开(公告)日：2012-04-05

申请号：PCT/US2011041978

申请日：2011-06-27

Applicant: INTEL CORP ,  HECK JOHN ,  LIU ANSHENG ,  PANICCIA MARIO J

Inventor： HECK JOHN ,  LIU ANSHENG ,  PANICCIA MARIO J

IPC: G02B6/12

CPC classification number: G02B6/4214 ,  G02B6/422

Abstract: Techniques and architectures for providing a reflective target area of an integrated circuit die assembly. In an embodiment, a reflective bevel surface of a die allows an optical signal to be received from the direction of a side surface of a die assembly for reflection into a photodetector. In another embodiment, one or more grooves in a coupling surface of the die provide respective leverage points for aligning a target area of the bevel surface with a detecting surface of the photodetector.

Abstract translation: 用于提供集成电路管芯组件的反射目标区域的技术和架构。 在一个实施例中，管芯的反射斜面允许从模组件的侧表面的方向接收光信号以反射到光电探测器中。 在另一个实施例中，管芯耦合表面中的一个或多个凹槽提供相应的杠杆作用点，以将斜面表面的目标区域与光电探测器的探测表面对准。

公开(公告)号：WO2007041155A3

公开(公告)日：2007-12-13

申请号：PCT/US2006037646

申请日：2006-09-26

Applicant: INTEL CORP ,  HECK JOHN ,  MA QING

Inventor： HECK JOHN ,  MA QING

IPC: H01L23/13 ,  H01L25/065

CPC classification number: H01L23/13 ,  H01L23/147 ,  H01L23/49827 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L25/16 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/20753 ,  H01L2924/00012

Abstract: Microelectronic packages are disclosed. A microelectronic package may include a substrate having first and second sides. Passive components may be located on the first side of the substrate. Interconnects may also be located on the first side of the substrate, and may be electrically coupled with the passive components. Microelectronic components may be located on the first side of the substrate and may be electrically coupled with interconnects. The substrate may include an opening therein. The opening may lead from the second side of the substrate toward the first side of the substrate. A plurality of conductive paths may be at least partially included in the opening. Each of the conductive paths may lead from the second side of the substrate toward the first side of the substrate to communicate electrical signals to interconnects. Methods of making the packages and electronic devices including the packages are also disclosed.

Abstract translation: 公开了微电子封装。 微电子封装可以包括具有第一和第二侧面的衬底。 无源组件可以位于衬底的第一侧上。 互连件也可以位于衬底的第一侧上，并且可以与无源部件电耦合。 微电子部件可以位于衬底的第一侧上并且可以与互连件电耦合。 衬底可以包括其中的开口。 开口可以从基板的第二侧朝向基板的第一侧。 多个导电路径可以至少部分地包括在开口中。 每个导电路径可以从衬底的第二侧朝向衬底的第一侧引导，以将电信号传送到互连。 还公开了制造包装和包括包装的电子装置的方法。

公开(公告)号：EP3080618A4

公开(公告)日：2017-11-01

申请号：EP14869807

申请日：2014-11-19

Applicant: INTEL CORP

Inventor： HUTCHISON DAVID N ,  HECK JOHN

IPC: G01P15/14 ,  B81B7/02 ,  G01B9/02 ,  G01C19/5656 ,  G01C19/5712 ,  G01C19/5733 ,  G01C19/5776 ,  G01P15/02 ,  G01P15/08 ,  G01P15/093

CPC classification number: G01P15/093 ,  G01B9/02023 ,  G01C19/56 ,  G01C19/5712 ,  G01C19/5733 ,  G01C19/5776 ,  G01P2015/0848

Abstract: Embodiments of the present disclosure are directed towards techniques and configurations for MEMS sensing device configured to determine inertial change applied to the device. In one instance, the device may comprise a laser arrangement configured to generate a light beam, and a waveguide configured to split the light beam into two portions. The waveguide may include two arms through which the respective portions of the light beam may respectively pass, and disposed substantially parallel with each other and joined together around their respective ends to recombine the portions into a light beam. One of the arms may be deformable. A deformation of the arm may result in a change of an optical path length of a portion of the light beam traveling through the arm, causing a detectable change in light intensity of the recombined light beam outputted by the waveguide. Other embodiments may be described and/or claimed.

公开(公告)号：EP3080617A4

公开(公告)日：2017-10-25

申请号：EP14870402

申请日：2014-11-19

Applicant: INTEL CORP

Inventor： HUTCHISON DAVID N ,  HECK JOHN

IPC: G01P3/68 ,  B81B7/02 ,  G01P15/093 ,  H01S3/10

CPC classification number: G01P15/093 ,  G01C19/56 ,  G01D5/268 ,  G01P15/14 ,  G02B26/0858 ,  G02F1/025

Abstract: Embodiments of the present disclosure are directed towards a micro-electromechanical system (MEMS) sensing device, including a laser arrangement configured to generate a light beam, a first waveguide configured to receive and output a first portion of the light beam, and a second waveguide having a section that is evanescently coupled to the first waveguide and configured to receive and output a second portion of the light beam. The section of the second waveguide is configured to be movable substantially parallel to the first waveguide, wherein a movement of the section of the second waveguide may be caused by an inertial change applied to the sensing device. The movement of the section may cause a detectable change in light intensity between the first and second portions of the light beam. Based on the detected change, the inertial change may be determined. Other embodiments may be described and/or claimed.

公开(公告)号：EP2795675A4

公开(公告)日：2015-11-25

申请号：EP11878060

申请日：2011-12-20

Applicant: INTEL CORP

Inventor： HECK JOHN ,  BAR HANAN ,  FESHALI AVI ,  FELDESH RAN

IPC: H01L27/14 ,  G02B6/12

CPC classification number: G02B6/1225 ,  G02B6/12004 ,  G02B6/13 ,  G02B2006/12061 ,  H01L21/28575 ,  H01L21/8252 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/205

公开(公告)号：EP2585864A4

公开(公告)日：2015-10-14

申请号：EP11807266

申请日：2011-06-27

Applicant: INTEL CORP

Inventor： HECK JOHN ,  LIU ANSHENG ,  PANICCIA MARIO J

IPC: G02B6/12 ,  G02B6/42

CPC classification number: G02B6/4214 ,  G02B6/422

公开(公告)号：EP3161435A4

公开(公告)日：2018-03-28

申请号：EP15812427

申请日：2015-05-26

Applicant: INTEL CORP

Inventor： HUTCHISON DAVID N ,  KIM KYU HYUN ,  RONG HAISHENG ,  HECK JOHN ,  XU SHENGBO

IPC: G01J3/18 ,  G01J3/02 ,  G01J3/20 ,  G01N21/27 ,  G02B6/12 ,  G02B6/122

CPC classification number: G02B6/4295 ,  G01J3/0218 ,  G01J3/0237 ,  G01J3/0259 ,  G01J3/0297 ,  G01J3/1809 ,  G01J3/1895 ,  G01J3/20 ,  G01J3/32 ,  G02B6/12033

Abstract: Techniques and mechanisms for a monolithic photonic integrated circuit (PIC) to provide spectrometry functionality. In an embodiment, the PIC comprises a photonic device, a first waveguide and a second waveguide, wherein one of the first waveguide and the second waveguide includes a released portion which is free to move relative to a substrate of the PIC. During a metering cycle to evaluate a material under test, control logic operates an actuator to successively configure a plurality of positions of the released portion relative to the photonic device. In another embodiment, light from the first waveguide is variously diffracted by a grating of the photonic device during the metering cycle, where portions of the light are directed into the second waveguide. Different wavelengths of light diffracted into the second waveguide may be successively detected, for different positions of the released portion, to determine spectrometric measurements over a range of wavelength.

公开(公告)号：EP3077860A4

公开(公告)日：2017-08-02

申请号：EP13898555

申请日：2013-12-03

Applicant: INTEL CORP

Inventor： HUTCHISON DAVID N ,  RONG HAISHENG ,  HECK JOHN

IPC: G02B6/12

CPC classification number: G02B6/422 ,  G02B6/12002 ,  G02B6/12004 ,  G02B6/12016 ,  G02B6/1203 ,  G02B6/12033 ,  G02B6/122 ,  G02B6/14 ,  G02B6/4208 ,  G02B6/4266

Abstract: A portion of an optical waveguide extending laterally within a photonic integrated circuit (PIC) chip is at least partially freed from the substrate to allow physical displacement of a released waveguide end relative to the substrate and relative to an adjacent photonic device also fabricated in the substrate. The released waveguide end may be displaced to modulate interaction between the photonic device and an optical mode propagated by the waveguide. In embodiments where the photonic device is an optical coupler, employing for example an Echelle grating or arrayed waveguide grating (AWG), mode propagation through the coupler may be modulated via physical displacement of the released waveguide end. In one such embodiment, thermal sensitivity of an integrated optical wavelength division multiplexer (WDM) is reduced by displacing the released waveguide end relative to the coupler in a manner that counters a temperature dependence of the optical coupler.

Abstract translation: 在光子集成电路（PIC）芯片内侧向延伸的光波导的一部分至少部分地从衬底释放，以允许释放的波导端相对于衬底和相对于同样制造在衬底中的相邻光子器件的物理位移 。 释放的波导端可以被移位以调制光子器件与由波导传播的光学模式之间的相互作用。 在其中光子器件是光学耦合器的实施例中，例如采用阶梯光栅或阵列波导光栅（AWG），通过耦合器的模式传播可以通过释放的波导端的物理位移来调制。 在一个这样的实施例中，通过以抵消光耦合器的温度依赖性的方式相对于耦合器移位释放的波导端来减小集成光学波分多路复用器（WDM）的热灵敏度。

公开(公告)号：DE102021119453A1

公开(公告)日：2022-05-19

申请号：DE102021119453

申请日：2021-07-27

Applicant: INTEL CORP

Inventor： MAHALINGAM HARI ,  FRISH HAREL ,  MCCARGAR SEAN ,  KEENER JOSHUA ,  YERKES SHANE ,  HECK JOHN ,  LIAO LING

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/26 ,  G02B6/30

Abstract: Ausführungsformen der vorliegenden Offenbarung betreffen optische Koppler mit niedriger numerischer Apertur (NA) oder Punktgrößenwandler, die einen lateralen Verjüngungsabschnitt und/oder einen vertikalen adiabatischen Verjüngungsabschnitt beinhalten. Bei Ausführungsformen können die optischen Koppler auf einem Siliciumsubstrat in der Nähe von V-Nuten in dem Substrat positioniert sein, um Glasfasern zu enthalten, die selbstauszurichten und mit den optischen Kopplern zu koppeln sind. Andere Ausführungsformen können beschrieben und/oder beansprucht werden.