公开(公告)号：DE60038811D1

公开(公告)日：2008-06-19

申请号：DE60038811

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D ,  SCHOEPP ALAN M ,  HEMKER DAVID J ,  WILCOXSON MARK H

IPC: C23C16/507 ,  H01J37/32 ,  B05D7/24 ,  H01L21/3065

Abstract: A plasma processing system for processing a substrate, is disclosed. The plasma processing system includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing chamber includes a material that does not substantially react with the reactive gas chemistries that are delivered into the plasma processing chamber. In addition, the reactant gases that are flown into the plasma processing chamber are disclosed.

公开(公告)号：AU2003220552A1

公开(公告)日：2003-10-13

申请号：AU2003220552

申请日：2003-03-26

Applicant: LAM RES CORP

Inventor： OWCZARZ ALEKSANDER ,  MOREL BRUNO ,  KISTLER RODNEY ,  HEMKER DAVID J ,  GOTKIS YEHIEL

IPC: B24B37/005 ,  B24B49/02 ,  B24B49/10 ,  B24B49/14 ,  H01L21/304 ,  H01L21/66 ,  B24B49/12

Abstract: In chemical mechanical polishing apparatus, a wafer carrier plate is provided with a cavity for reception of a sensor positioned very close to a wafer to be polished. Energy resulting from contact between a polishing pad and an exposed surface of the wafer is transmitted only a very short distance to the sensor and is sensed by the sensor, providing data as to the nature of properties of the exposed surface of the wafer, and of transitions of those properties. Correlation methods provide graphs relating sensed energy to the surface properties, and to the transitions. The correlation graphs provide process status data for process control.

公开(公告)号：MY152899A

公开(公告)日：2014-11-28

申请号：MYPI20063849

申请日：2006-08-09

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  REDEKER FRITZ C ,  HEMKER DAVID J

IPC: B08B3/00 ,  B08B3/04 ,  H01L21/00

Abstract: A FIRST PROXIMITY HEAD (103) IS CONFIGURED TO DEFINE A MENISCUS (111) OF A PHOTORESIST DEVELOPER SOLUTION ON A SUBSTRATE (101). THE MENISCUS IS TO BE DEFINED BETWEEN A BOTTOM OF THE FIRST PROXIMITY HEAD AND THE SUBSTRATE. A SECOND PROXIMITY HEAD (105) IS CONFIGURED TO DEFINE A RINSING MENISCUS (121) ON THE SUBSTRATE AND REMOVE THE RINSING MENISCUS FROM THE SUBSTRATE. THE SECOND PROXIMITY HEAD IS POSITIONED TO FOLLOW THE FIRST PROXIMITY HEAD RELATIVE TO A TRAVERSAL DIRECTION OF THE FIRST AND SECOND PROXIMITY HEADS OVER THE SUBSTRATE. EXPOSURE OF THE SUBSTRATE TO THE MENISCUS OF PHOTORESIST DEVELOPER SOLUTION CAUSES PREVIOUSLY IRRADIATED PHOTORESIST MATERIAL ON THE SUBSTRATE TO BE DEVELOPED TO RENDER A PATTERNED PHOTORESIST LATER. THE FIRST AND SECOND PROXIMITY HEADS ENABLE PRECISE CONTROL OF A RESIDENCE TIME OF THE PHOTORESIST DEVELOPER SOLUTION ON THE SUBSTRATE DURING THE DEVELOPMENT PROCESS.

公开(公告)号：AT353472T

公开(公告)日：2007-02-15

申请号：AT00982118

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  HEMKER DAVID J ,  WILCOXSON MARK H ,  KUTHI ANDRAS

IPC: H05H1/46 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

Abstract: A plasma processing system for processing a substrate which includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing system includes a coupling window disposed at an upper end of the plasma processing chamber and an RF antenna arrangement disposed above a plane defined by the substrate when the substrate is disposed within the plasma processing chamber for the processing. The plasma processing system also includes an electromagnet arrangement disposed above the plane defined by the substrate. The electromagnet arrangement is configured so as to result in a radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the coupling window and antenna when at least one direct current is supplied to the electromagnet arrangement. The radial variation is effective to affect processing uniformity across the substrate. The plasma processing system additionally includes a dc power supply coupled to the electromagnet arrangement. The dc power supply has a controller to vary a magnitude of at least one direct current, thereby changing the radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the antenna to improve the processing uniformity across the substrate.

公开(公告)号：IL159628A

公开(公告)日：2006-08-01

申请号：IL15962803

申请日：2003-12-29

Applicant: LAM RES CORP ,  BRIGHT NICHOLAS ,  HEMKER DAVID J

Inventor： BRIGHT NICHOLAS ,  HEMKER DAVID J

IPC: H01L21/304 ,  B24B37/015 ,  B24B37/04 ,  B24B37/30 ,  B24B49/14 ,  H01L21/302

Abstract: Apparatus controls the temperature of a wafer for chemical mechanical polishing operations. A wafer carrier wafer mounting surface positions a wafer adjacent to a thermal energy transfer unit for transferring energy relative to the wafer. A thermal energy detector oriented adjacent to the wafer mounting surface detects the temperature of the wafer. A controller is responsive to the detector for controlling the supply of thermal energy relative to the thermal energy transfer unit. Embodiments include defining separate areas of the wafer, providing separate sections of the thermal energy transfer unit for each separate area, and separately detecting the temperature of each separate area to separately control the supply of thermal energy relative to the thermal energy transfer unit associated with the separate area.

公开(公告)号：AU4585301A

公开(公告)日：2001-10-15

申请号：AU4585301

申请日：2001-03-19

Applicant: LAM RES CORP

Inventor： HUANG CHUNG-HO ,  HEMKER DAVID J ,  LUI ANDREW

IPC: H01L21/02 ,  G06F13/40 ,  G06F13/00

Abstract: A process chamber with a computer system that controls the process chamber is connected to one or more sensors, which are used to monitor the process in the process chamber. The sensors are connected to the computer system in a client/server relationship, in a way that allows the sensors to be hot swappable plug and play sensors. The computer system exchanges various messages with the sensors, synchronizes with the sensors, and integrates and utilizes data sent from the sensors.

公开(公告)号：AU5518401A

公开(公告)日：2001-10-08

申请号：AU5518401

申请日：2001-03-16

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  HEMKER DAVID J

IPC: H01J37/32 ,  H01J37/00

Abstract: A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber includes a chamber within which a plasma is both ignited and sustained for processing. The chamber is defined at least in part by a wall and further includes a plasma confinement arrangement. The plasma confinement arrangement includes a magnetic array disposed around the periphery of the process chamber configured to produce a magnetic field which establishes a cusp pattern on the wall of the chamber. The cusp pattern on the wall of the chamber defines areas where a plasma might damage or create cleaning problems. The cusp pattern is shifted to improve operation of the substrate processing system and to reduce the damage and/or cleaning problems caused by the plasma's interaction with the wall. Shifting of the cusp pattern can be accomplished by either moving the magnetic array or by moving the chamber wall. Movement of either component may be continuous (that is, spinning one or more magnet elements or all or part of the wall) or incremental (that is, periodically shifting the position of one or more magnet elements or all or part of the wall).

公开(公告)号：AU1918801A

公开(公告)日：2001-05-30

申请号：AU1918801

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  HEMKER DAVID J ,  WILCOXSON MARK H ,  KUTHI ANDRAS

IPC: H05H1/46 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

Abstract: A plasma processing system for processing a substrate which includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing system includes a coupling window disposed at an upper end of the plasma processing chamber and an RF antenna arrangement disposed above a plane defined by the substrate when the substrate is disposed within the plasma processing chamber for the processing. The plasma processing system also includes an electromagnet arrangement disposed above the plane defined by the substrate. The electromagnet arrangement is configured so as to result in a radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the coupling window and antenna when at least one direct current is supplied to the electromagnet arrangement. The radial variation is effective to affect processing uniformity across the substrate. The plasma processing system additionally includes a dc power supply coupled to the electromagnet arrangement. The dc power supply has a controller to vary a magnitude of at least one direct current, thereby changing the radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the antenna to improve the processing uniformity across the substrate.