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    DEVICE HAVING QUANTUM CASCADE LASER
    11.
    发明专利
    DEVICE HAVING QUANTUM CASCADE LASER 失效

    公开(公告)号：JPH10321951A

    公开(公告)日：1998-12-04

    申请号：JP4360898

    申请日：1998-02-25

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： BAILLARGEON JAMES NELSON ,  CAPASSO FEDERICO ,  CHO ALFRED YI ,  FAIST JEROME ,  GMACHI CLAIRE F ,  SIRTORI CARLO ,  SIVCO DEBORAH LEE

    IPC: H01S5/00 ,  H01S5/06 ,  H01S5/062 ,  H01S5/12 ,  H01S5/34 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To provide a QC(quantum cascade) laser, which operates at a temperature higher than or equal to a ultra-low temperature, performs single-mode laser radiation, and makes continuous modulations possible over a wide wavelength region. SOLUTION: A quantum cascade laser 10 is provided with a first clad region 11, a second clad region 13, a core region 12 arranged between the regions 11 and 13, electrical contacts 14, 15 for making a current flow in a laser, and a grating structure 16 for giving dispersion feedback. A grating structure 16 is so isolated from the core region such that electromagnetic radiation in a confined laser mode has intensity which is non-zero in the grating structure 16. The grating structure 16 is constituted so as to perform single-mode laser radiation.

    ARTICLE WITH QUANTUM CASCADE LASER
    12.
    发明专利
    ARTICLE WITH QUANTUM CASCADE LASER 失效

    公开(公告)号：JPH10144995A

    公开(公告)日：1998-05-29

    申请号：JP28032297

    申请日：1997-10-14

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CAPASSO FEDERICO ,  CHO ALFRED YI ,  FAIST JEROME ,  HUTCHINSON ALBERT LEE ,  SCAMARCIO GAETANO ,  SIRTORI CARLO ,  SIVCO DEBORAH LEE

    IPC: H01S5/00 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To provide a new type of QC(quantum cascade) laser. SOLUTION: A QC laser has first and second clad layers and a core region between the clad layers. The core region has a plurality of nearly equal multilayer semiconductor repeated units 11, and each repeated unit has an active region 12 and a carrier injection region 13. The active region has an superlattice region with an upper mini band 171 and a lower mini band 161, and a mini gap is formed between the upper mini band and the lower mini band. A carrier injection region is selected, so that carriers can be phase-shifted easily from the lower mini band of a certain repetition unit to the upper mini band of repetition unit at an adjacent downstream side. The active region is selected so that the wavelength ranges from 3 to 15μm.

    MULTI WAVE LENGTHS QUANTUM CASCADE LIGHT SOURCE
    15.
    发明专利
    MULTI WAVE LENGTHS QUANTUM CASCADE LIGHT SOURCE 失效

    公开(公告)号：JP2000151026A

    公开(公告)日：2000-05-30

    申请号：JP29898099

    申请日：1999-10-21

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CAPASSO FEDERICO ,  CHO ALFRED Y ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO

    IPC: H01L33/00 ,  H01S5/34 ,  H01S5/343

    Abstract: PROBLEM TO BE SOLVED: To make effective inductive radiation in a plurality of wave lengths by making an energy interval of a central wave length larger than a line spreading energy of the first and the second whichever larger, and by providing a means of preventing buffering of electrons from a fourth level to a third level. SOLUTION: For example, a lower mini band 1 has a first and a second energy levels and an upper mini band 2 has a third and a fourth levels. Light is generated by a first autonomous radioactive ray having a central wave length λ1 and a first line spreading energy caused by an electron transition between the fourth and the first levels. Further, light is generated by a second autonomous radioactive ray having a central wave length λ2 and a second line spreading energy caused by an electron transition between the third and the second levels. An energy interval of the central wave length is larger than a larger line spreading energy of the first and the second and a means of preventing of a buffering of electrons from the fourth level to the third level.

    QUANTUM CASCADE OPTICAL EMITTER HAVING PREBIASED INTERNAL ELECTRON POTENTIAL
    16.
    发明专利
    QUANTUM CASCADE OPTICAL EMITTER HAVING PREBIASED INTERNAL ELECTRON POTENTIAL 失效

    公开(公告)号：JP2000101201A

    公开(公告)日：2000-04-07

    申请号：JP26801999

    申请日：1999-09-22

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CAPASSO FEDERICO ,  CHO ALFRED Y ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO

    IPC: H01L29/06 ,  H01L29/15 ,  H01S5/34 ,  H01S5/343

    Abstract: PROBLEM TO BE SOLVED: To prebias an actual electronic potential by changing an SL cycle so as to make flat band conditions in the upper and lower mini-bands. SOLUTION: A semiconductor optical emitter 10 with a quantum cascade superlattice(QCSL) is provided with an upper clad area 16 and an active area 14 working as a lower clad area between the upper clad area 16 and a substrate 12. An insulation layer 18 is formed on the uppermost area of a device, and an opening is formed to expose a part of the uppermost area of a mesa by patterning. A first electrode 20 is formed in the opening in a manner that it is in contact with the insulation layer 18 and the upper clad area, and a second electrode 22 is formed on the substrate 12. A drive circuit is connected between the electrodes 20 and 22 so as to supply to a laser a pumping energy to generate light. The emitter 10 works as an incoherent natural radiation source at the threshold or less, while it works as a coherent stimulus radiation source at the threshold or more. In the case of the latter, when a feedback is given, the light source functions as a laser.

    ARTICLE FORMED OF IMPROVED SUPERLATTICE QUANTUM CASCADE LASER
    17.
    发明专利
    ARTICLE FORMED OF IMPROVED SUPERLATTICE QUANTUM CASCADE LASER 失效

    公开(公告)号：JPH11340586A

    公开(公告)日：1999-12-10

    申请号：JP12334099

    申请日：1999-04-30

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CAPASSO FEDERICO ,  CHO ALFRED Y ,  FAIST JEROME ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO

    IPC: H01S5/00 ,  H01S5/042 ,  H01S5/30 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To use a unit which is effective for monitoring contamination by collecting multiple identical repetitive units so as to form a waveguide core area, and constituting the repetitive units of injector areas and superlattice active regions. SOLUTION: A waveguide core region 13 is formed between a substrate/ lower-order optical close region 12 and a higher-order optical close region 14. The waveguide core area 13 is constituted by gathering multiple identical repetitive units. The repetitive units are constituted of injector regions which are injection/relief areas and superlattice active regions selected so that radiative carriers from a higher-order energy level to a lower-order energy level in the superlattice active region can easily be shifted. Thus, the diffusion of the carriers becomes less, an optical loss can be reduced, and the unit can used effectively be for monitoring of contamination.

    ARTICLE COMPRISING SEMICONDUCTOR LASER WHICH CAN BE MODULATED IN ELECTRIC FIELD
    18.
    发明专利
    ARTICLE COMPRISING SEMICONDUCTOR LASER WHICH CAN BE MODULATED IN ELECTRIC FIELD 失效

    公开(公告)号：JPH10275956A

    公开(公告)日：1998-10-13

    申请号：JP7633098

    申请日：1998-03-24

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CAPASSO FEDERICO ,  CHO ALFRED YI ,  FAIST JEROME ,  HUTCHINSON ALBERT LEE ,  SIRTORI CARLO ,  SIVCO DEBORAH LEE

    IPC: H01S5/00 ,  H01S5/042 ,  H01S5/062 ,  H01S5/0625 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To make it possible to modulate a laser in an electric field in an IR intermediate wavelength range by a method wherein an active region is provided with a plurality of repetition units consisting of a plurality of layers, the laser oscillation transition of the laser is turned into the non-resonance tunneling transition of charge carries from a first quantum state to a second quantum state and the frequency of photons is set as the function of an electric bias. SOLUTION: In an article, which comprises a laser having first and second contacts to apply an electric bias to a semiconductor structure comprising an active region 12, the region 12 has a plurality of the same repetition units consisting of a plurality of layers in the directions intersecting orthogonal the contacts and is selected so that a laser oscillation transition of the laser is a non-resonance tunneling transition of charge carriers from a first quantum state to a second quantum state. This transition is achieved by radiation of photons of an hν of energy. Here, the (h) is the constant of a plank and the (ν) is the frequency of the photons. This frequency of the photons is the function of the electric bias, which is applied to the semiconductor structure, and the laser can be modulated in an electric field in an IR intermediate wavelength range.

    19.
    发明专利
    未知

    公开(公告)号：DE69924439T2

    公开(公告)日：2006-02-16

    申请号：DE69924439

    申请日：1999-09-14

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CAPASSO FREDERICO ,  YI CHO ALFRED ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO

    IPC: H01L29/06 ,  H01L29/15 ,  H01S5/34 ,  H01S5/343

    Abstract: Instead of trying to keep the SLs of a QC laser field free, we "pre-bias" the actual electronic potential by varying the SL period (and hence average composition) so as to achieve an essentially flat profile, on average, of upper and lower minibands, despite the presence of an applied field in the SLs. In one embodiment, in at least a first subset of the QW layers, the thicknesses of the QW layers are varied from QW layer to QW layer so as to increase in the direction of the applied field. In this embodiment, the upper and lower lasing levels are located, in the absence of an applied electric field, each at different energies from layer to layer within the first subset, so that despite the presence of an applied field, the desired flatband condition of the upper and lower minibands is realized. In a preferred embodiment, the thicknesses of the QW layers within the first subset are varied from QW layer to QW layer so as to increase in the direction of the applied field, and the thicknesses of a second subset of the barrier layers are also varied from barrier layer to barrier layer so as to decrease or increase in the direction of the applied field.

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