公开(公告)号：MY162299A

公开(公告)日：2017-05-31

申请号：MYPI20094402

申请日：2009-10-20

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  LEE HING WAH ,  MOHD ISMAHADI SYONO

IPC: G01N27/414

Abstract: The present invention discloses an inverted ion-sensitive field effect transistor (ISFET) (10) and method of producing thereof, wherein ISFET comprises a substrate layer ( 11) , a sensing membrane (12) on said substrate layer (11), a layer of field oxide (19) on said sensing membrane (12), doped source (13) and drain (14) regions on said layer of field oxide (19), and characterized in that-electrical contacts (16, 17) are provided to the respective source (13) and drain (14) regions on the opposing side of said sensing membrane (12) and said substrate layer (11) is windowed with an opening access ( 18) to said sensing membrane ( 12) to provide electrical isolation of the electrical contacts ( 16, 1 7) from said sensing membrane (12).

公开(公告)号：MY158780A

公开(公告)日：2016-11-15

申请号：MYPI2013701092

申请日：2013-06-25

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  LEE HING WAH ,  MOHSEN NABIPOOR ,  KHAIRUL ANUAR BIN ABDUL WAHID ,  SAAT SHUKRI BIN EMBONG

IPC: G01N27/07 ,  G01N27/22 ,  G01N27/30 ,  H01L21/027 ,  H01L29/786

Abstract: DESCRIBED HEREIN IS A METAL ELECTRODE (100) HAVING AT LEAST ONE HIGH ASPECT RATIO STRUCTURE. THE METAL ELECTRODE (100) COMPRISES A SILICON LAYER (101) HAVING THE HIGH ASPECT RATIO STRUCTURE, AN OXIDE LAYER (102) ON TOP OF THE SILICON LAYER (101), AN ADHESIVE LAYER (103) ON TOP OF THE OXIDE LAYER (102), AND A METAL LAYER (104) ON TOP OF THE ADHESIVE LAYER (103). THE THICKNESS OF THE METAL LAYER (104) IS AT LEAST 15 TIMES LESSER THAN THE HEIGHT OF THE HIGH ASPECT RATIO STRUCTURE. DUE TO THIS PARTICULAR FEATURE, THE METAL LAYER (104) IS DEPOSITED ON TOP OF THE ADHESIVE LAYER (103) IN A SELF-ALIGNED MANNER, TAKING THE SHAPE OF THE HIGH ASPECT RATIO STRUCTURE, AND DISCONNECTED AT THE WALL OF THE HIGH ASPECT RATIO STRUCTURE. FURTHER, THE METAL ELECTRODE (100) CAN BE MODIFIED ACCORDINGLY TO SUIT DIFFERENT APPLICATIONS. ALSO DESCRIBED HEREIN IS A METHOD FOR FABRICATING THE AFOREMENTIONED METAL ELECTRODE (100). BEST ILLUSTRATIVE

公开(公告)号：MY176767A

公开(公告)日：2020-08-21

申请号：MYPI2015702215

申请日：2015-07-07

Applicant: MIMOS BERHAD

Inventor： LEE WAI YEE ,  DANIEL BIEN CHIA SHENG ,  SURAYA BINTI SULAIMAN ,  KHAIRUL ANUAR BIN ABDUL WAHID ,  LEE HING WAH

Abstract: The present invention disclosed a thin-film resistance temperature detector (RTD) device with a single RTD structure, dual interconnecting RTD structures, and dual interconnecting RTD structures paired to a plurality of sensor electrodes (60). A method for fabricating the thin-film RTD device with the single RTD structure, dual interconnecting RTD structures, and dual interconnecting RTD structures paired to the plurality of sensor electrodes (60) are also disclosed herein. The RTD pattern (10) (20) is connected in series, while the dual RTD structures are connected via a concentric square pad (30) in a stacking and parallel manner. Further, the RTD pattern (10) (20) is arranged in a continuous array and provides a localised and user-selectable point resistance value via a plurality of contact pads (50A) (50B) and a secondary busbar connection line (40) which allows the RTD device to continue operating even when any of the RTD patterns or the RTD structures are broken.

公开(公告)号：MY171435A

公开(公告)日：2019-10-14

申请号：MYPI2014701545

申请日：2014-06-11

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  LEE HING WAH ,  SAAT SHUKRI BIN EMBONG

IPC: G01L1/18

Abstract: A pressure-sensing device (10) and a process for fabricating it is disclosed. In a preferred embodiment, a sacrificial oxide layer (11) is first formed onto a silicon substrate (30). A bottom polymer film (14) is then formed on oxide layer (11). Conductive elements including electrodes (12a, 12b) and/or contact pads (18a, 18b) are formed on the bottom polymer film (14). A graphene sheet (20) is deposited to electrically connect the electrodes (12a, 12b). A top polymer film (16) is then laid on top so that the conductive elements (12, 18) and graphene (20) are sandwiched and encapsulated in between the top and bottom polymer layers (14, 16) chosen from polyimide or poly dimethylsiloxane (PDMS). Openings (19a, 19b) on top polymer layer (16) may optionally be provided to allow for interconnection of the contact pads (18a, 18b). The sacrificial oxide (11) is then etched to release the completed device (10) from the substrate (30) may be reused.

公开(公告)号：MY169590A

公开(公告)日：2019-04-22

申请号：MYPI2010700005

申请日：2010-02-02

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  AZLINA MOHD ZAIN ,  LEE HING WAH

Abstract: The present invention describes a novel method of fabricating nano-resistors (22) which allows full integration with standard CMOS fabrication process. The resistor comprises long and thin nano-structures as resistive element. It is formed by conductive nano-spacers (18B) using oxide (16) as mould on insulating layer. An embodiment of such structure is polysilicon nano-structures doped or implanted with n-type or p-type ions (20) to improve material conductance. The electrical properties of the device will change with respect to the dimension of these nano-structures. Resistors with polysilicon nano-structures down to 10 nm can be produced with resulting measured resistance in the MOhm scale.

公开(公告)号：MY169278A

公开(公告)日：2019-03-21

申请号：MYPI2010001389

申请日：2010-03-29

Applicant: MIMOS BERHAD

Inventor： MUHAMAD RAMDZAN BUYONG ,  MOHD ISMAHADI SYONO ,  LEE HING WAH ,  DANIEL BIEN CHIA SHENG

IPC: B01F25/60

Abstract: The present invention relates generally to a planar micropump with integrated passive micromixers (10} which enhances the mixing of two or more differing fluids thereby allowing an efficient and effective mixing action to be achieved thereby resulting in a more homogeneous mixture for a reliable chemical analysis.

公开(公告)号：MY164424A

公开(公告)日：2017-12-15

申请号：MYPI2011700017

申请日：2011-03-03

Applicant: MIMOS BERHAD

Inventor： LEE HING WAH ,  DANIEL BIEN CHIA SHENG

IPC: G01N27/414 ,  H01L21/77

Abstract: THE PRESENT INVENTION RELATES TO A SENSOR SYSTEM (10). THE SENSOR SYSTEM COMPRISES AT LEAST TWO CONTACT PADS (11), A READ OUT INTEGRATED CIRCUIT (12), AND A SENSOR DEVICE (13). THE READ OUT INTEGRATED CIRCUIT (12) IS STACKED ON TOP OF THE SENSOR DEVICE (13), AND IT (12) IS CONNECTED TO THE SENSOR DEVICE (13) THROUGH A PLURALITY OF VIAS (16). THE AT LEAST TWO CONTACT PADS (11) ARE CONNECTED TO THE READ OUT INTEGRATED CIRCUIT (12) AND THE SENSOR DEVICE (13) THROUGH A PLURALITY OF VIAS (16) AND METAL LINES (15).

公开(公告)号：MY142676A

公开(公告)日：2010-12-15

申请号：MYPI20072005

申请日：2007-11-15

Applicant: MIMOS BERHAD

Inventor： ABDUL RANI ROZINA ,  LEE HING WAH ,  ABDULLAH ALI ZAINI ,  MAT HUSSIN MOHD ROFEI ,  ZAKARIA AZLAN ,  MOHD ZAIN AZLINA ,  MOHAMD BADARUDDIN SITI AISHAH ,  NGAH NOR AZHADI

IPC: G01N27/414

Abstract: AN MTEGRATED ION SENSITIVE FIELD EFFECT TRANSISTOR SENSOR 5 A CHEMICAL SENSOR HAVING AN ION SENSITIVE FIELD EFFECT TRANSISTOR (ISFET) COMPRISING A SUBSTRATE (10) SITUATED WITH A SOURCE (4) AND A DRAIN (3); AN ION SENSING GATE (5) DISPOSED BETWEEN THE SOURCE AND THE DRAIN; AN ION-SENSITIVE FILM (1) FORMED ON THE SURFACE OF THE SUBSTRATE AND THE ION SENSING GATE-, AN ELECTRODE DOMAIN (6) FORMED ON 10 THE ION-SENSITIVE FILM SURROUNDING THE PERIPHERY OF THE ION SENSING GATE (5) CHARACTERIZED IN THAT THE ELECTRODE DOMAIN (6) IS MADE OF TUNGSTEN, TITANIUM OR TUNGSTEN SILICIDE. (MOST ILLUSTRATED BY

公开(公告)号：WO2011053110A3

公开(公告)日：2011-08-18

申请号：PCT/MY2010000182

申请日：2010-09-30

Applicant: MIMOS BERHAD ,  SYONO MOHD ISMAHADI ,  BIEN DANIEL CHIA SHENG ,  LEE HING WAH

Inventor： SYONO MOHD ISMAHADI ,  BIEN DANIEL CHIA SHENG ,  LEE HING WAH

IPC: G01N37/00 ,  G01N33/00

CPC classification number: G01D11/245 ,  G06K19/0717

Abstract: An integrated packaged microchip (100) including at least one environmental sensor (104) and at least one Read-Out Integrated Chip (ROIC) (102) is provided, characterized in that, the integrated packaged microchip (100) further includes an etched opening (108) of the environmental sensor (104) exposed to a sensable environment, using at least one layer of glass wafer (101,106) and at least one layer of silicon wafer (107).

Abstract translation: 提供包括至少一个环境传感器（104）和至少一个读出集成芯片（ROIC）（102）的集成封装微芯片（100），其特征在于，集成封装微芯片（100）还包括蚀刻开口 使用至少一层玻璃晶片（101,106）和至少一层硅晶片（107），将所述环境传感器（104）的暴露于敏感环境的环境传感器（108）移除。

公开(公告)号：WO2011062471A3

公开(公告)日：2011-11-17

申请号：PCT/MY2010000237

申请日：2010-10-29

Applicant: MIMOS BERHAD ,  LEE HING WAH ,  BIEN CHIA SHENG DANIEL

Inventor： LEE HING WAH ,  BIEN CHIA SHENG DANIEL

IPC: G01N35/08 ,  B01L3/00 ,  B01L7/00 ,  G01N1/44 ,  G01N33/48

CPC classification number: F16K99/0005 ,  B01L3/502738 ,  B01L2300/1827 ,  B01L2400/0677 ,  C08L2201/12 ,  F16K99/0001 ,  F16K99/003 ,  F16K99/0038

Abstract: The present invention provides a microfluidic device (100) comprises an adapting unit; a microvalve (120) adapted to removably couple with the adapting unit, the microvalve (120) having a fluid path (124) and a heat sensitive plug (126), the heat sensitive plug (126) is disposed to block the fluid path (124), wherein the microvalve (120) is adapted to be normally-closed by default by the heat sensitive plug (126); and a heater (114) disposed on a position having a close proximity to the heat sensitive plug (126), wherein the heater (114) is operable to melt the heat sensitive plug (126). Once the heat sensitive plug (126) is molten to open the fluid path (124), the fluid path (124) is not re-closable and a replacement microvalve is required for a new use. A microvalve and a method of fabricating the same is also provided herewith.

Abstract translation: 本发明提供一种微流体装置（100），包括适配单元; 适于可移除地与适配单元耦合的微型阀（120），所述微型阀（120）具有流体路径（124）和热敏塞（126），所述热敏塞（126）设置成阻挡流体路径 124），其中所述微型阀（120）默认地由所述热敏塞（126）常闭; 以及设置在紧邻热敏插塞（126）的位置上的加热器（114），其中加热器（114）可操作以熔化热敏插塞（126）。 一旦热敏插塞（126）熔化以打开流体路径（124），则流体路径（124）不可重复关闭，并且需要更换微型阀来进行新的使用。 本发明还提供微型阀及其制造方法。