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11.发明专利
公开(公告)号：AU2012294932A1
公开(公告)日：2014-03-27
申请号：AU2012294932
申请日：2012-08-09
Applicant: SOLEXEL INC
Inventor： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER K-JOSEF , RANA VIRENDRA V , SEUTTER SEAN , DESHPANDE ANAND , CALCATERRA ANTHONY , OLSEN GERRY , MANTEGHI KAMRAN , STALCUP THOM , KAMIAN GEORGE D , WANG DAVID XUAN-QI , SU YEN-SHENG , WINGERT MICHAEL
IPC: H01L31/042 , H01L31/18
Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.
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12.发明申请HIGH-EFFICIENCY SOLAR PHOTOVOLTAIC CELLS AND MODULES USING THIN CRYSTALLINE SEMICONDUCTOR ABSORBERS 审中-公开高效率太阳能光伏电池和模块使用薄晶体半导体吸收体
公开(公告)号：WO2013022479A3
公开(公告)日：2013-05-16
申请号：PCT/US2012000348
申请日：2012-08-09
Applicant: SOLEXEL INC , MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER K-JOSEF , RANA VIRENDRA V , SEUTTER SEAN , DESHPANDE ANAND , CALCATERRA ANTHONY , OLSEN GERRY , MANTEGHI KAMRAN , STALCUP THOM , KAMIAN GEORGE D , WANG DAVID XUAN-QI , SU YEN-SHENG , WINGERT MICHAEL
Inventor： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER K-JOSEF , RANA VIRENDRA V , SEUTTER SEAN , DESHPANDE ANAND , CALCATERRA ANTHONY , OLSEN GERRY , MANTEGHI KAMRAN , STALCUP THOM , KAMIAN GEORGE D , WANG DAVID XUAN-QI , SU YEN-SHENG , WINGERT MICHAEL
IPC: H01L31/042 , H01L31/18
CPC classification number: H01L31/022441 , H01L31/0201 , H01L31/02167 , H01L31/02327 , H01L31/03765 , H01L31/0392 , H01L31/049 , H01L31/0516 , H01L31/0682 , H01L31/075 , H01L31/1812 , H01L31/1896 , Y02E10/547
Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.
Abstract translation: 描述了与用于背接触太阳能电池的背板相关的制造方法和结构，其提供用于太阳能电池基板增强和电互连以及用于形成薄膜背接触太阳能电池的制造方法和结构。
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公开(公告)号：WO2014011260A2
公开(公告)日：2014-01-16
申请号：PCT/US2013035029
申请日：2013-04-02
Applicant: SOLEXEL INC
Inventor： KRAMER KARL-JOSEF , MOSLEHI MEHRDAD M , KAPUR PAWAN , RANA VIRENDRA V , DUTTON DAVID , SEUTTER SEAN M , CALCATERRA ANTHONY , ASHJAEE JAY , YONEHARA TAKAO
CPC classification number: H01L31/1804 , H01L31/022441 , H01L31/0682 , H01L31/0747 , Y02E10/547 , Y02P70/521
Abstract: Fabrication methods and structures relating to multi-level metallization for solar cells as well as fabrication methods and structures for forming back contact solar cells are provided.
Abstract translation: 提供了与太阳能电池的多层金属化有关的制造方法和结构以及用于形成背接触太阳能电池的制造方法和结构。
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公开(公告)号：WO2012135395A3
公开(公告)日：2013-02-07
申请号：PCT/US2012031043
申请日：2012-03-28
Applicant: SOLEXEL INC , MOSLEHI MEHRDAD M , KRAMER KARL-JOSEF , SEUTTER SEAN , KAPUR PAWAN , STALCUP THOM , WANG DAVID XUAN-QI , KAMIAN GEORGE D , MANTEGHI KAMRAN , SU YEN-SHENG , ANBALAGAN PRANAV , RANA VIRENDRA V , CALCATERRA ANTHONY , OLSEN GERRY , WORWAG WOJCIECH
Inventor： MOSLEHI MEHRDAD M , KRAMER KARL-JOSEF , SEUTTER SEAN , KAPUR PAWAN , STALCUP THOM , WANG DAVID XUAN-QI , KAMIAN GEORGE D , MANTEGHI KAMRAN , SU YEN-SHENG , ANBALAGAN PRANAV , RANA VIRENDRA V , CALCATERRA ANTHONY , OLSEN GERRY , WORWAG WOJCIECH
IPC: H01L31/042 , H01L31/0216 , H01L31/18
CPC classification number: H01L31/022441 , H01L31/0516 , H01L31/0682 , H01L31/1892 , Y02E10/547
Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, attaching a prepeg backplane to the interdigitated pattern of base electrodes and emitter electrodes, forming holes in the prepeg backplane which provide access to the first layer of electrically conductive metal, and depositing a second layer of electrically conductive metal on the backside surface of the prepeg backplane forming an electrical interconnect with the first layer of electrically conductive metal through the holes in the prepeg backplane.
Abstract translation: 描述了提供太阳能电池基板加强和电互连的背接触太阳能电池背板的制造方法和结构。 该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图形，将预制电路背板连接到基极和发射电极的交错图案，在预制电路背板上形成提供对第一层 的导电金属，并且在所述预制底板的背面上沉积第二导电金属层，通过所述预制底板中的所述孔与所述第一导电金属层形成电互连。
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公开(公告)号：WO2013055307A3
公开(公告)日：2013-10-24
申请号：PCT/US2011046873
申请日：2011-08-05
Applicant: SOLEXEL INC , MOSLEHI MEHRDAD M , WANG DAVID XUAN-QI , KRAMER KARL-JOSEF , SEUTTER SEAN , TOR SAM TONE , CALCATERRA ANTHONY
Inventor： MOSLEHI MEHRDAD M , WANG DAVID XUAN-QI , KRAMER KARL-JOSEF , SEUTTER SEAN , TOR SAM TONE , CALCATERRA ANTHONY
IPC: H01L31/042 , H01L31/05 , H01L31/18
CPC classification number: H01L31/022458 , H01L31/02008 , H01L31/02013 , H01L31/022441 , H01L31/028 , H01L31/0516 , H01L31/0682 , H01L31/1804 , H01L31/1892 , Y02E10/50
Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, forming electrically conductive emitter plugs and base plugs on the interdigitated pattern, and attaching a backplane having a second interdigitated pattern of base electrodes and emitter electrodes at the conductive emitter and base plugs to form electrical interconnects.
Abstract translation: 描述了与用于背接触太阳能电池的背板相关的制造方法和结构，其提供太阳能电池基底增强和电互连。 该方法包括在半导体衬底的背侧表面上沉积交叉指型的基极和发射极电极图案，在交叉指型图案上形成导电发射极插塞和基极插塞，并将具有第二叉指图案的基极和发射极电极 在导电发射极和基极插头处形成电互连。
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Patent Agency Ranking16.发明申请HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS USING THIN PLANAR SEMICONDUCTORS 审中-公开高效率光伏背接触式太阳能电池结构及使用薄平面半导体的制造方法
公开(公告)号：WO2011072161A3
公开(公告)日：2011-11-10
申请号：PCT/US2010059759
申请日：2010-12-09
Applicant: SOLEXEL INC , MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER KARL-JOSEF , WANG DAVID XUAN-QI , SEUTTER SEAN , RANA VIRENDRA V , CALCATERRA ANTHONY , VAN KERSCHAVER EMMANUEL
Inventor： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER KARL-JOSEF , WANG DAVID XUAN-QI , SEUTTER SEAN , RANA VIRENDRA V , CALCATERRA ANTHONY , VAN KERSCHAVER EMMANUEL
IPC: H01L31/042 , H01L31/0216
CPC classification number: H01L31/0236 , H01L31/0201 , H01L31/02167 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03921 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1892 , Y02E10/52 , Y02E10/547 , Y02P70/521
Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.
Abstract translation: 提供背接触背结太阳能电池和制造方法。 该背接触背结太阳能电池包括具有光捕获前表面的衬底，该光捕获前表面具有钝化层，掺杂的基极区域以及具有与掺杂的基极区域相反的极性的掺杂的背侧发射极区域。 发射体上的背面钝化层和图案化反射层形成光捕获背面镜。 叉指金属化图案位于太阳能电池的背面，并且永久增强为电池提供支撑。
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17.发明申请METAL FOIL METALLIZATION FOR BACKPLANE-ATTACHED SOLAR CELLS AND MODULES 审中-公开用于背板连接的太阳能电池和模块的金属箔金属化
公开(公告)号：WO2015073591A9
公开(公告)日：2016-04-07
申请号：PCT/US2014065312
申请日：2014-11-12
Applicant: SOLEXEL INC , MOSLEHI MEHRDAD , STALCUP THOM , KRAMER KARL-JOSEF , KAPUR PAWAN , CALCATERRA ANTHONY , RANA VIRENDRA V , SEUTTER SEAN M , WINGERT MICHAEL
Inventor： MOSLEHI MEHRDAD , STALCUP THOM , KRAMER KARL-JOSEF , KAPUR PAWAN , CALCATERRA ANTHONY , RANA VIRENDRA V , SEUTTER SEAN M , WINGERT MICHAEL
IPC: H01L31/00
CPC classification number: H01L31/1804 , H01L31/022441 , H01L31/0682 , Y02E10/547 , Y02P70/521
Abstract: A back contact solar cell is described which includes a semiconductor light absorbing layer; a first-level metal layer (Ml), the Ml metal layer on a back side of the light absorbing layer, the back side being opposite from a front side of the light absorbing layer designed to receive incident light; an electrically insulating backplane sheet backside of said solar cell with the Ml layer, the backplane sheet comprising a plurality of via holes that expose portions of the Ml layer beneath the backplane sheet; and an M2 layer in contact with the backplane sheet, the M2 layer made of a sheet of pre-fabricated metal foil material comprising a thickness of between 5-250 μm, the M2 layer electrically connected to the Ml layer through the via holes in the backplane sheet.
Abstract translation: 描述了一种背接触太阳能电池，其包括半导体光吸收层; 第一级金属层（M1），位于光吸收层背面的Ml金属层，背面与被设计成接收入射光的光吸收层的前侧相反; 具有M1层的所述太阳能电池背面的电绝缘背板片，所述背板片包括多个通孔，所述多个通孔暴露在所述背板片下面的M1层的部分; 以及与背板接触的M2层，M2层由预先制备的金属箔材料制成，包括5〜50μm的厚度，M2层通过导电孔中的通孔与M1层电连接 底板。
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18.发明申请HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS USING SEMICONDUCTOR WAFERS 审中-公开高效率光伏背接触太阳能电池结构及使用半导体晶圆的制造方法
公开(公告)号：WO2011072179A3
公开(公告)日：2011-11-17
申请号：PCT/US2010059783
申请日：2010-12-09
Applicant: SOLEXEL INC , MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER KARL-JOSEF , WANG DAVID XUAN-QI , SEUTTER SEAN , RANA VIRENDRA V , CALCATERRA ANTHONY , VAN KERSCHAVER EMMANUEL , HARWOOD DUNCAN , MANSOORI MAJID , WINGERT MICHAEL
Inventor： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER KARL-JOSEF , WANG DAVID XUAN-QI , SEUTTER SEAN , RANA VIRENDRA V , CALCATERRA ANTHONY , VAN KERSCHAVER EMMANUEL , HARWOOD DUNCAN , MANSOORI MAJID , WINGERT MICHAEL
IPC: H01L31/042 , H01L31/0216
CPC classification number: H01L31/0236 , H01L31/0201 , H01L31/02167 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03921 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1892 , Y02E10/52 , Y02E10/547 , Y02P70/521
Abstract: A back contact back junction solar cell using semiconductor wafers and methods for manufacturing are provided. The back contact back junction solar cell comprises a semiconductor wafer having a doped base region, a light capturing front side surface, and a doped backside emitter region. A front side and backside dielectric layer and passivation layer provide enhance light trapping and internal reflection. Backside base and emitter contacts are connected to metal interconnects forming a metallization pattern of interdigitated fingers and busbars on the backside of the solar cell.
Abstract translation: 提供了使用半导体晶片的背接触背结太阳能电池和用于制造的方法。 背接触背结太阳能电池包括具有掺杂基极区域，光捕获正面表面和掺杂背面发射极区域的半导体晶片。 正面和背面介电层和钝化层提供增强的光俘获和内部反射。 背侧基极和发射极触点连接到金属互连上，在太阳能电池的背面形成交叉指状物和母线的金属化图案。
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19.发明公开HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS USING THIN PLANAR SEMICONDUCTORS 有权高效率光伏背接触太阳能电池结构及其制造方法使用薄平面SEMICONDUCTORS
公开(公告)号：EP2510551A4
公开(公告)日：2014-11-26
申请号：EP10836710
申请日：2010-12-09
Applicant: SOLEXEL INC
Inventor： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER KARL-JOSEF , WANG DAVID XUAN-QI , SEUTTER SEAN , RANA VIRENDRA V , CALCATERRA ANTHONY , VAN KERSCHAVER EMMANUEL
IPC: H01L31/042 , H01L31/0216 , H01L31/068 , H01L31/18
CPC classification number: H01L31/0236 , H01L31/0201 , H01L31/02167 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03921 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1892 , Y02E10/52 , Y02E10/547 , Y02P70/521
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公开(公告)号：EP2601687A4
公开(公告)日：2018-03-07
申请号：EP11871380
申请日：2011-08-05
Applicant: SOLEXEL INC
Inventor： MOSLEHI MEHRDAD M , WANG DAVID XUAN-QI , KRAMER KARL-JOSEF , SEUTTER SEAN , TOR SAM TONE , CALCATERRA ANTHONY
IPC: H01L31/02 , H01L31/0224 , H01L31/05 , H01L31/18
CPC classification number: H01L31/022458 , H01L31/02008 , H01L31/02013 , H01L31/022441 , H01L31/028 , H01L31/0516 , H01L31/0682 , H01L31/1804 , H01L31/1892 , Y02E10/50
Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, forming electrically conductive emitter plugs and base plugs on the interdigitated pattern, and attaching a backplane having a second interdigitated pattern of base electrodes and emitter electrodes at the conductive emitter and base plugs to form electrical interconnects.
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