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公开(公告)号：FR2911455A1
公开(公告)日：2008-07-18
申请号：FR0752701
申请日：2007-01-16
Applicant: ST MICROELECTRONICS SA , CENTRE NAT RECH SCIENT
Inventor： CATHELIN ANDREA , FRAPPE ANTOINE , KAISER ANDREAS
IPC: H03M3/02
Abstract: Le modulateur delta-sigma numérique comprend une entrée de signal pour recevoir des échantillons numériques de N bits, des moyens numériques de filtrage connectés à l'entrée de signal et aptes à effectuer des opérations d'addition/soustraction et d'intégration selon un codage en arithmétique redondante pour délivrer des échantillons numériques filtrés et des moyens de quantification aptes à effectuer une opération de quantification non exacte pour délivrer des échantillons numériques de sortie de n bits, n étant inférieur à N. L'entrée des moyens de quantification est connectée au sein des moyens numériques de filtrage.
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公开(公告)号：AT376256T
公开(公告)日：2007-11-15
申请号：AT03749913
申请日：2003-05-02
Applicant: ST MICROELECTRONICS SA
Inventor： CATHELIN ANDREA , BERNARD CHRISTOPHE , DELPECH PHILIPPE , TROADEC PIERRE , SALAGER LAURENT , GARNIER CHRISTOPHE
IPC: H01L23/52 , H01L23/66 , H01G17/00 , H01L21/3205 , H01L21/4763 , H01L21/76 , H01L21/822 , H01L23/48 , H01L23/522 , H01L23/58 , H01L27/04 , H04Q7/20
Abstract: An electronic circuit includes a substrate. A capacitor and at least one semiconductor component are supported by a surface of the substrate. A substantially planar screen, oriented parallel to the surface of the substrate and made of metallic material, is placed between the capacitor and the semiconductor component. Preferably, the semiconductor component is placed in proximity to the surface of the substrate and several superposed layers of insulating material cover the surface of the substrate and the semiconductor component. The capacitor is then placed within at least one layer of insulating material above the semiconductor component, and the screen is placed within an intermediate layer of insulating material between the layer incorporating the capacitor and the surface of the substrate.
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Patent Agency Ranking
公开(公告)号：FR2864733A1
公开(公告)日：2005-07-01
申请号：FR0403493
申请日：2004-04-02
Applicant: ST MICROELECTRONICS SA
Inventor： CATHELIN ANDREA , BELOT DIDIER
IPC: H03B5/36 , H03J3/18 , H03J3/20 , H03J3/24 , H03L5/00 , H03L7/00 , H03L7/099 , H03H9/02 , H03B5/32
Abstract: The loop has an oscillatory circuit generating a predetermined frequency signal and having a Helmholtz resonator (33) of BAW type producing resonance and anti-resonance frequencies. The resonator is associated to a spiral inductor whose inductance is variable in the range of resonance and anti-resonance frequencies and is associated to a varactor allowing to adjust the resonator.
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公开(公告)号：FR2911448A1
公开(公告)日：2008-07-18
申请号：FR0752700
申请日：2007-01-16
Applicant: ST MICROELECTRONICS SA , CENTRE NAT RECH SCIENT
Inventor： BELOT DIDIER , CATHELIN ANDREA , DEVAL YANN , EL HASSAN MOUSTAPHA , KERHERVE ERIC , SHIRAKAWA ALEXANDRE
Abstract: Ce résonateur acoustique en volume à fréquence de résonance réglable comprenant un élément piézoélectrique pourvu de deux électrodes.Il comporte un élément de commutation (12) formant électrode additionnelle venant sélectivement se superposer à l'une des électrodes pour faire varier l'épaisseur totale de ladite électrode et modifier en conséquence la fréquence de résonance du résonateur.
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公开(公告)号：FR2864728A1
公开(公告)日：2005-07-01
申请号：FR0403492
申请日：2004-04-02
Applicant: ST MICROELECTRONICS SA
Inventor： CATHELIN ANDREA , RAZAFIMANDIMBY STEPHANE , BELOT DIDIER , CARPENTIER JEAN FRANCOIS
IPC: H03B5/36 , H03J3/18 , H03J3/20 , H03J3/24 , H03L5/00 , H03L7/00 , H03L7/099 , H03H9/02 , H03H9/46
Abstract: The circuit has an adjustable resonator component (311) connected into a slave circuit (310), and a resonator component (321) connected into a master circuit (320). Each resonator is associated with an inductor, preferably in the form of a spiral on a silicon substrate, that is set near resonance and anti-resonance frequencies. The resonators are also associated with a voltage-variable capacitor, which is adjusted by a tuning voltage (Vtune). An independent claim is included for an acoustic resonator circuit intended to be integrated in a semiconductor device.
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公开(公告)号：FR2864726A1
公开(公告)日：2005-07-01
申请号：FR0403494
申请日：2004-04-02
Applicant: ST MICROELECTRONICS SA
Inventor： RAZAFIMANDIMBY STEPHANE , CATHELIN ANDREA
IPC: H03B5/36 , H03H9/25 , H03H11/12 , H03J3/18 , H03J3/20 , H03J3/24 , H03L5/00 , H03L7/00 , H03G3/20 , H03H9/02
Abstract: The loop has a loop filter with an output generating an electrical control voltage. A BAW type resonator (33) produces resonance and anti-resonance frequencies, and is associated to an inductor with an inductance in the vicinity of the resonance and anti-resonance frequencies. The resonator is associated to a varactor to adjust the resonance frequency, and is adjustable via the control voltage.
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公开(公告)号：FR2839581A1
公开(公告)日：2003-11-14
申请号：FR0205712
申请日：2002-05-07
Applicant: ST MICROELECTRONICS SA
Inventor： CATHELIN ANDREA , BERNARD CHRISTOPHE , DELPECH PHILIPPE , TROADEC PIERRE , SALAGER LAURENT , GARNIER CHRISTOPHE
IPC: H01L23/52 , H01G17/00 , H01L21/3205 , H01L21/4763 , H01L21/76 , H01L21/822 , H01L23/48 , H01L23/522 , H01L23/58 , H01L23/66 , H01L27/04 , H04Q7/20
Abstract: An electronic circuit includes a substrate. A capacitor and at least one semiconductor component are supported by a surface of the substrate. A substantially planar screen, oriented parallel to the surface of the substrate and made of metallic material, is placed between the capacitor and the semiconductor component. Preferably, the semiconductor component is placed in proximity to the surface of the substrate and several superposed layers of insulating material cover the surface of the substrate and the semiconductor component. The capacitor is then placed within at least one layer of insulating material above the semiconductor component, and the screen is placed within an intermediate layer of insulating material between the layer incorporating the capacitor and the surface of the substrate.
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