公开(公告)号：DE60317312T2

公开(公告)日：2008-09-04

申请号：DE60317312

申请日：2003-02-11

Applicant: ST MICROELECTRONICS SA

Inventor： BARDOUILLET MICHEL ,  RIZZO PIERRE ,  MALHERBE ALEXANDRE ,  WUIDART LUC

IPC: G11C14/00 ,  G11C17/14 ,  G11C5/00 ,  H03K3/356

Abstract: An integrated cell and method for extracting a binary value based on a value difference between two resistors values, including connection circuitry for a binary reading of the sign of the difference between the resistors, and connection circuitry for a modification of the value of one of the resistors to make the sign of the difference invariable.

公开(公告)号：DE60128608T2

公开(公告)日：2008-01-31

申请号：DE60128608

申请日：2001-01-24

Applicant: ST MICROELECTRONICS SA

Inventor： POMET ALAIN ,  MALHERBE ALEXANDRE ,  MARINET FABRICE

IPC: G06F13/42 ,  G06K19/07

Abstract: A device for the regeneration of a clock signal from an external serial bus includes a ring oscillator and counter. The ring oscillator provides n phases of a clock signal. Of these n phases, one phase is used as a reference and is applied to the counter. It is thus possible to count the number of entire reference clock signal periods between a first pulse and a second pulse received from the bus. In reading the state of the phases in the oscillator upon reception of the second pulse, a determination is made for a current phase corresponding to the phase delay between the reference clock signal and the second pulse of the bus. By using a regeneration device that also includes a ring oscillator and a counter, it is possible to regenerate the clock signal of the bus with high precision.

公开(公告)号：FR2836751A1

公开(公告)日：2003-09-05

申请号：FR0213555

申请日：2002-10-29

Applicant: ST MICROELECTRONICS SA

Inventor： WUIDART LUC ,  BARDOUILLET MICHEL ,  MALHERBE ALEXANDRE

IPC: G11C16/22 ,  G11C17/14 ,  G11C17/08 ,  G11C17/18 ,  H01L27/115 ,  H01L21/326

Abstract: A one-time programmable memory cell and the programming thereof including a programming transistor which is disposed in series with a polycrystalline silicon programming resistor forming the memory element. The programming is non-destructive with respect to the polycrystalline silicon resistor.

公开(公告)号：FR2835945A1

公开(公告)日：2003-08-15

申请号：FR0201638

申请日：2002-02-11

Applicant: ST MICROELECTRONICS SA

Inventor： WUIDART LUC ,  MALHERBE ALEXANDRE ,  BARDOUILLET MICHEL

IPC: G11C17/14 ,  G11C11/41 ,  G11C14/00 ,  H01L21/822 ,  H01L27/04 ,  H03K3/356 ,  H03K5/1532 ,  G06K19/073

公开(公告)号：DE69701176T2

公开(公告)日：2000-06-15

申请号：DE69701176

申请日：1997-09-11

Applicant: ST MICROELECTRONICS SA

Inventor： MALHERBE ALEXANDRE

IPC: H03K17/22

Abstract: The device includes a control circuit (CC) with n primary circuits (CE1,CEn), each representing a critical; path of an electronic circuit to be monitored. Each primary circuit delivers a control signal (POR1,.. PORn) which is then transmitted to a logical gate OR. A common signal (POR) is generated by the gate. A voltage detector (DET) delivers a temperature independent signal (TPOR) to the other input of the logical gate. The signal TPOR has an amplitude equal to the threshold voltage (Vs) of the device.

公开(公告)号：DE60236398D1

公开(公告)日：2010-07-01

申请号：DE60236398

申请日：2002-10-21

Applicant: ST MICROELECTRONICS SA

Inventor： MALHERBE ALEXANDRE ,  BLISSON FABRICE

IPC: H01L27/02 ,  H01L27/04 ,  H01L21/822 ,  H01L27/06

公开(公告)号：DE602006010452D1

公开(公告)日：2009-12-31

申请号：DE602006010452

申请日：2006-02-07

Applicant: ST MICROELECTRONICS SA ,  UNIV D AIX MARSEILLE I

Inventor： TELANDRO VINCENT ,  MALHERBE ALEXANDRE ,  KUSSENER EDITH

IPC: G06K19/073

Abstract: The circuit has a linear regulator (4`) for supplying a DC supply voltage (Vdd) to an internal load (29) from an external voltage (Vps). Chopper type capacitive clipping supply circuits (5), with switched capacitances, are in parallel with the activated linear regulator. The circuits supply current at the same time as the linear regulator, during an operation phase (D) of the integrated circuit which corresponds to a phase in which a calculating processor which contains the internal load is active.. An independent claim is also included for a method for scrambling the current signature of a load including an integrated circuit.

公开(公告)号：DE60128314T2

公开(公告)日：2008-01-17

申请号：DE60128314

申请日：2001-11-12

Applicant: ST MICROELECTRONICS SA

Inventor： MARINET FABRICE ,  MALHERBE ALEXANDRE

IPC: H03K3/84 ,  G06F7/58 ,  G06K19/073

Abstract: Random signal generator comprises an MOS transistor as an electronic noise source. The MOS transistor is operated with a drain source current having a random component and has means for producing a binary random signal from the random drain source current. The current channel is arranged to be curved or S shaped by suitable doping. The invention also relates to an integrated circuit with a binary signal generator based on an MOS transistor. The circuit has suitable connections for connecting to other circuits. An Independent claim is made for a method for generating a random signal from an electronic noise source, in which an MOS transistor with an S or screw shaped channel is used.

公开(公告)号：DE60317312D1

公开(公告)日：2007-12-20

申请号：DE60317312

申请日：2003-02-11

Applicant: ST MICROELECTRONICS SA

Inventor： BARDOUILLET MICHEL ,  RIZZO PIERRE ,  MALHERBE ALEXANDRE ,  WUIDART LUC

IPC: G11C14/00 ,  G11C17/14 ,  G11C5/00 ,  H03K3/356

Abstract: An integrated cell and method for extracting a binary value based on a value difference between two resistors values, including connection circuitry for a binary reading of the sign of the difference between the resistors, and connection circuitry for a modification of the value of one of the resistors to make the sign of the difference invariable.

公开(公告)号：FR2895115A1

公开(公告)日：2007-06-22

申请号：FR0553962

申请日：2005-12-20

Applicant: ST MICROELECTRONICS SA

Inventor： MALHERBE ALEXANDRE ,  DUVAL BENJAMIN

IPC: G06K19/073 ,  G06F12/14 ,  G11C5/14

Abstract: L'invention concerne un circuit de détection de pics parasites sur l'alimentation d'un circuit électronique, comportant au moins un premier transistor (MP51) dont la borne de commande est reliée à une borne (52) d'application d'un premier potentiel d'une tension d'alimentation (Vcc) du circuit et dont une première borne de conduction est reliée à une borne (52) d'application d'un deuxième potentiel (Vcc) par l'intermédiaire d'au moins un premier élément résistif (R1), la deuxième borne de conduction du premier transistor fournissant le résultat (Vd) de la détection.